KSC2330 SAMSUNG | Alldatasheet
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SAMSUNG SEM ICONOUCTOR INC LYE D Brseans @ 0006922 T L Te3/-23 KSC2330 NPN EPITAXIAL SILICON TRANSISTOR 7 ee COLOR TV CHROMA OUTPUT 7 . * Collector-Base Voltage Vce0 =300¥ To-e2L * Current Gain-Bandwidth Product f;=50MHz (Typ) ABSOLUTE MAXIMUM RATINGS (Ta =25°C) Collector-Emitter Voltage Voso 300 v Emitter-Base Voltage Ves0 7 “v . Collector Current fc 100 mA , Collector Dissipation Po 1 w Junction Temperature ul 150 °c Storage Temperature Tig ~55~+150 | °C , 1, Emitter 2. Colector 3. Base ELECTRICAL CHARACTERISTICS (Ta =25°C) : [eeecnie [omen [ mcm [om | oe [ me [om eS Collector-Emitter Breakdown Voltage | BVceo len 5mA, Ip=0 300 v Emitter-Base Breakdown Voltage BV e50 le=—100;A, Io=0 7 . v Collector Cut-off Current tes0 Vea =200V, le=0 0.4 vA DC Current Gain bre Vo =10V, lem 20mA 40 240 Collector-Emitter Saturation Voltage | Vce (sat) | lo=t0mA, la=tmA 05 | v Current Gain-Bandwidth Product fr Vee =30V, lox 10mA MHz ‘Output Capacitance Cob Vos =10V, te=0 pF + | f= MHz . hre CLASSIFICATION & SAMSUNG SEMICONDUCTOR . 192 .
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