2SC2320 MITSUBISHI | Alldatasheet
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1 : Emitter 2 : Collector 3 : Base 4.4 MAX. 6.2 MAX.10.5 MIN. 1.25 5.6 MAX. 4.6 0.45 1.25 1.5 1 2 3 1 2 3 EIAJ : SC-43 JEDEC : TO-92 Unit : mm V V V mA CHARACTERISTIC SYMBOL RATING UNIT MAXIMUM RATINGS (Ta = 25 °C) VEBO VCEO VCBO Collector Power Dissipation Collector Current Collector-Emitter Voltage Emitter-Base Voltage Collector-Base Voltage Junction Temperature Storage Temperature Range Ic Pc Tj Tstg -55~+125 125 300 200 mW ELECTRICAL CHARACTERISTICS (Ta = 25 °C) SYMBOLCHARACTERISTIC TEST CONDITION MIN. TYP. MAX. UNIT. Collector-Emitter Breakdown Voltage μA μA V V MHz pF dB2 0.1 0.1 80090 0.3 200 Collector Cut-off current Emitter Cut-off current DC Current Gain DC Current Gain Transition Frequency Collector Output Capacitance Noise Figure VCB = 50V, IE = 0 VEB = 6V, Ic = 0 VCE = 6V, Ic = 1mA VCE = 6V, Ic = 0,1mA VCE = 6V, IE = 10mA VCB = 6V, IE = 0, f = 1MHz VCE = 6V, IE = 0,3mA f = 100Hz, RG = 10kΩ Ic = 100mA, IB = 10mA Ic = 100 A, RBE = μ ∞ ICBO hFE VCE(sat) V(BR)CEO hFE IEBO fT Cob NF 3,5 Excellent hFE Linearity Collector-Emitter Saturation Voltage Complementary to 2SA999 Audio Frequency Voltage Amplifier Applications NPN Epitaxial Planar Silicon Transistor Low Noise Amplifier Applications hFE 90~180 150~300 250~500 400~800 D E F GRankhFE Rank classification :