2SC2235 TOSHIBA | Alldatasheet
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TOSHIBA 2$€2235 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIER APPLICATIONS. Unit in mm DRIVER STAGE AMPLIFIER APPLICATIONS. SAMAK, E + Complementary to 2SA965. 3 0.75MAXU yap 1oMAX fh osmax HN As 0.6MAX i al Zl q ae MAXIMUM RATINGS (Ta = 25°C) f H fl 7 CHARACTERISTIC SYMBOL | RATING |UNIT 127 a EI Collector-Base Voltage VcBo. — Collector-Emitter Voltage Vcro Gr 3 Emitter Base Voltage Veno | 5 |v] 3 Emitter Current | m | 800 | ma | 3._BASE Collector Power Dissipation | Pc | _ 900 =| mw | [JEDEC _TO-92MoD Storage Temperature Range —55~150 TOSHIBA —_2-5J1A Weight : 0.36g ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION Emitter Cut-off Current | Ippo | VEp=5V, Io=0 | = | — | 100 | na | Collector-Emitter _ _ Breakdown Voltage V(BR)CEO | I= 10mA, Ip=0 120 |- | - | v Emitter-Base Breakdown Voltage VoBRIEBO | Te=ImA, TO=0 | s(-|-] | DC Current Gain hE (Note) | VoR=5V, Ic=100mA | so | — | 240] | Collector-Emitter Saturation Voltage Veentsat) | 10=500mA, Tp=50mA b= | =|] Base-Emitter Voltage Von=5V, I¢=500mA [= | = [10] v | Collector Output Capacitance] Cop | Von=10V, te=0, f=1mHz | — [| — | 30 | oF | Note: hyp Classification O: 80~160, Y : 120~240 2610016402 malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility ‘of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss ‘of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified Operating, ranges as 4at forth in the most recent products spectications. Also, please Keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any Infringements df intellectual propertyor other rights of the third parties fwnich may resuit from Its use. No. lense is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 1997-09-01 1/2
Ic - VCE hrE —- Ic = mtbr e Coe rm, oer eet tela Daze 2 seo Set ONLI 2 aT § Err —t FEAF PH 38 wa : FS. [Pees | eee 3 fa 2 30 Set HP ‘4S 0 COLLECTOR-EMITTER VOLTAGE Veg (V) COLLECTOR CURRENT Ic (mA) VCE(sat) - Ic Ic - VBE 08 | 800) 5 views CT 5 fem LUT pe Lee free PT E. a" Pit Fe alll swe el) =e “LTT ae —— el oe | aan nee SSS ee 2 400 Tee00 aot o =| g LLL LP oe | 36 snot tH 28 EHH e | Tilly | eS CU TT TTT a TELETPVVLL BOLI TUE TM = * aa A) \\ || COLLECTOR-CURRENT Ig (mA) BASE-EMITTER VOLTAGE VpE (V) SAFE OPERATING AREA Pc - Ta 3000 = 1000) fcimmnm= OT HA !™ TTT TTT ~ 00 SSE tomes 809) NI E rool ovenarion NU] | LT rll 5 oP SELLE LL Te ance) SSS & ml” Novaremmve SEE Trt 2 ot TET NET TT E wlcume ase” e HH 8 aw mensase me STE § PEPE E ye eT PNET | j[rewrenarone FTTH CUI a COTTE N J 05 1 35 #10 30 50 100 300500 1000 ° 0 20 40 60 80 100 120 140 160 COLLECTOR-EMITTER VOLTAGE Vcg (V) AMBIENT TEMPERATURE Ta (°C) 1997-09-01 2/2