2SC2166 MITSUBISHI | Alldatasheet
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MITSUBISHI RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE
DESCRIPTION
2SC2166 is a silicon NPN epitaxial planar type transistor designed OUTLINE DRAWING —— oimensions inmm for RF power amplifiers in HF band mobile radio applications. 9140.7, 92.6402 FEATURES = TaE08 © High power gain: Gpe > 13.8dB ———a @Vec = 12V, Po = GW, f = 27MHz By 1h ® © Emitter ballasted construction for high reliability and good @ AN . performances. He @ TO-220 similar package is combinient for mounting. Pe be Laat 5 st APPLICATION eto 4 3 to 4 watts output power amplifiers in HF band mobile radio zt fa 0.8210 applications. z| § {Tl o 2 (HES * l} aa Yt ® 2.5- 2. +0.10 E 5 hoster Lesmax | S ¢ # + PIN: . ® BASE @® COLLECTOR (FIN) @ emitter 1-30 @® FIN (COLLECTOR) ABSOLUTE MAXIMUM RATINGS (To=25'C uniess otherwise specified) | voso | Cotectortobssevoime PT [veso | ent womroige A [nese Po Collector isipation a | ow | A [tsi [Storage temperate 88 to 180 a Thermal resistance Note, Above parameters are guaranteed independently ELECTRICAL CHARACTERISTICS (Tc =25'c uniess otherwise specities) Symbol Parameter Test condition a | sencoo) Cotter w one wenomvaiog [lg a Lee | ot enmctenreigint | Vee itv tomes |e | Note. #Puise test. Pw= 150s, duty=5%. Aoove parameters, ratings. mits and conditons are subject to change. Nov. "97 ae rote ELECTRIC
MITSUBISHI RF POWER TRANSISTOR 2SC2166 NPN EPITAXIAL PLANAR TYPE eel deihiehedhenielindhhhiatlinn TEST CIRCUIT to NOpF f=27MHz 22pF = Zin=50Q 10 110pF 8D, 8T, 1P i - ae 80 0 50pF aT to 10pF SAFC (0 N0pF ‘47pF 1P ZL Cy: 0.01MF, 0.001uF, 1000F in parallel Cy: 10uF, 0.047yF, 0.0047uF, 100pF in parallel Ly! 10D, 127, 1P, 0,8mm@ enameled wire cr Notes: Coils are made from Imm¢ silver pleted copper wire except Ly & RFC IL Dine donate ote T: Turn number of coil P Pitch of coil + Vee TYPICAL PERFORMANCE DATA COLLECTOR DISSIPATION VS. COLLECTOR CURRENT VS. AMBIENT TEMPERATURE COLLECTOR TO EMITTER VOLTAGE Cl LES z z Lee TTT TT ° t—— S16 es” > ee TTT B Y im a ft Se = of po oe TT a NG oe | V a ae ee Hee | == 5 am o_o FES ttttttt tt 4 o 30 60 909 120 150 0 4 @ 12 16 20 AMBIENT TEMPERATURE Ta (°C) COLLECTOR TO EMITTER VOLTAGE Vce (V) COLLECTOR TO EMITTER BREAKDOWN DC CURRENT GAIN VS. VOLTAGE VS. COLLECTOR CURRENT BASE TO EMITTER RESISTANCE 200 130 bese HH EH HT TT TTT TT rma oe iat gO rn Fol LUT TTT TT 2 iol NTT TTT ae es ott [NUTT TTT T | ar ee Ne @ ot HITT ae PN Bobet tT tT TNT e” ott |i ti] A g of ETT TA 2 ttt TT TTT TT itm o LI Ti 23 ttt TT ITT TIT | . oLLi Iti TTT TT TT wit TT iti Tt TTT J 0.00.02 0102 05 1 235 10 $0 100 300500 1k 2k 3k 5k 10k 20k COLLECTOR CURRENT !c (A) BASE TO EMITTER RESISTANCE Rage (2) NOV. "97 ¢ MITSUBISHI ELECTRIC
MITSUBISHI RF POWER TRANSISTOR 28¢2166 NPN EPITAXIAL PLANAR TYPE NPN EPITAXIAL PLANAR TYPE COLLECTOR OUTPUT CAPACITANCE VS. COLLECTOR OUTPUT POWER, COLLECTOR TO BASE VOLTAGE EFFICIENCY VS. INPUT POWER 3 fence [TT TT TT] peer z w 100 Le] =z a 2" Cert" « RSE | EPA st EN TT i via 2 esos? ate: ga 2 LATTA" ¢ 8 2 Jf i, &
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Ee a s-LET TTT TT Ty, 8 1 2 3. 5 710 2030 5070100 0 02 04 O06 O08 1.0 COLLECTOR TO BASE VOLTAGE Vea (V) INPUT POWER Pip (W) OUTPUT POWER VS. COLLECTOR SUPPLY VOLTAGE ge "[assusmmenr | | qo _| é HO de § CCAS 3 2 AAA To |
2 Cee
COLLECTOR SUPPLY VOLTAGE Vec (V) NOV." 97