2SC2053 MITSUBISHI | Alldatasheet
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Technical content
MITSUBISHI RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE
DESCRIPTION
2SC2053 is a silicon NPN epitaxial planar type transistor de- OUTLINE DRAWING Dimensions in mm signed for RF amplifiers on VHF band mobile radio applications. 5.IMAX
FEATURES
© High power gain: Gpe 2 15.74B _ @Vec = 13.5V, Po =0. 15W, f= 175MHz 3 © Emitter ballasted construction, gold metallization for high 8 reliability and good performances. x © TO-92 similar package is combinient for mounting. os = ft] * APPLICATION Z| os i [ILLos Driver amplifiers in general in VHF band mobile radio applica- 5 tions. 1.27 1.27 ag x i Cra 2 ory, PIN? ) BASE ® COLLECTOR @ EMITTER TO-92L ABSOLUTE MAXIMUM RATINGS (tc =25'c unless otherwise specifies) a | voao | Collectortobesevorige | veoo | éminer bee ott a [a aeonimewawe Se [tig [Seater Note. Above parameters are guaranteed independently. ELECTRICAL CHARACTERISTICS (1c =25°c uniess otherwise specified) mbol axameter est condition uni | Veewrao| Ennerooaeeanaomnion ——SSit ew imaemo Sid | [Memos] Coteortwasetearsomvoioe | ew matemo SSS] | vonceo| coteser eerie eetiomwiie | testOna.reese tw ) | [oso [coleoranotevent SSS*d (Mepis ese SSS | [ceo | eminereiowene «denim [are | bc towmacwrenmn® ——SSSS~*dC eevee tna Sd ee [Po | Ovtout power i [0 | 200 || =w | Veo =13.5V, Pin=4mW, f=17SMHz [oe Tso fT | Note, Pulse wat, Pw=160n0, July=O% Above paremeters, ratings, limits and conditions are subject to change. Nov." 97
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MITSUBISHI RF POWER TRANSISTOR 2802053 NPN EPITAXIAL PLANAR TYPE TEST CIRCUIT : 175MHz Zin=50Q 68pF 120,1T,5P TR 80,2.5T, 1P 80,5T, iP Zour=50Q 80 1.5T aT 2.5T 22pF 1P O80. 5T,1P to SOpF REC to 12pF to SOpF a Je Cy: 100pF, 2200pF, 22uF in parallel Cy: 100pF, 2200pF, 10yF in paraliel +Voo Coil dimensions in milli-meter D: Inner diameter of coil P> Pitch of coil TYPICAL PERFORMANCE DATA COLLECTOR DISSIPATION VS. COLLECTOR CURRENT VS. AMBIENT TEMPERATURE COLLECTOR TO EMITTER VOLTAGE Zs 2 AAT 3 g PA Eas = wl pet 5 # VAC Ba, 7 ee 5 8 “CeSeToCory Zoe 3 _ CaBeeeenr 8 8 eerrcrrrrry ; (LCE 0 40 80 120 160 200 0 4 8 12 16 20 AMBIENT TEMPERATURE Ta ec) COLLECTOR TO EMITTER VOLTAGE Vee {V) COLLECTOR TO EMITTER BREAKDOWN VOLTAGE VS. DC CURRENT GAIN vs. BASE TO EMITTER RESISTANCE COLLECTOR CURRENT 60 — ~ 0 § JON e LHe pT es a TN 2 VERSE |
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e? CIO PS fg 28 “COM Pd . CLE . 10 20 50 100 200 SOO 1k 2k Sk 10k 0 100 200 300 400 BASE TO EMITTER RESISTANCE Ree (2) COLLECTOR CURRENT Ic (mA) NOV. ' 97
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MITSUBISHI RF POWER TRANSISTOR 2SC2053 NPN EPITAXIAL PLANAR TYPE CNP EPITAXIAL PLANAR TYPE OUTPUT POWER, COLLECTOR OUTPUT CAPACITANCE VS. COLLECTOR EFFICIENCY COLLECTOR TO BASE VOLTAGE VS. INPUT POWER = "7 TLD = “Tanee | | LT” ae a : _osbvernssv-+ | | tek T | 8
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5 of} TTT TT ¢ Se aaaaeD 3 ee ae a g Teer ye rey = a oat 1 VET TTT, & 2 = 5 0.25 0 g oe ee eCCTATT TTT 3 a 2,117 TTT e, § COU | Hee 24 owtL] TT TTT Tt, 8 1 2 3 5 7 10 2 30 50 ~o 4 8 12 16 20 COLLECTOR TO BASE VOLTAGE Veg (Vi INPUT POWER Pin (mW) OUTPUT POWER VS. COLLECTOR SUPPLY VOLTAGE ae borers TT IRI] Sisvt | yer T |
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Beet tT | ook TT TT TT TT | 8 10 12 14 16 18 COLLECTOR SUPPLY VOLTAGE Vee (V) NOV.’ 97 MITSUBISHI ate TBS