C203 NJSEMI | Alldatasheet
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c^^mi-Gonauctoi LPioaucti, Dna.. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon Controlled Rectifier 0.8A RMS UP TO 400 VOLTS SYMBOL A »b| E J L M INC MIN. .170 .0 1 6 ,0 1 « -ITS .125 095 ,045 .139 .900 .**« 1 1 5 .06 0 HES MAX. 2 1 0 02 1
9 I »
.105 .1 6 5 .1 0 5 OSS .050 .105 MILLIU MIN 4.5 6 .407 .407 496 3.9 4 2.4 2 1. 1 5 3. 4 3
1 Z 70
2.4 2 ETEftS MAX. 5.3 3 .5 33 .482 5.20 4. 1 9 2.6 6 1.39 1.27 2.C 6 NOTES 1.3 l|3 NOTES: 1. THREE LEADS. 2. CONTOUR OF THE PACKAGE BEYOND THIS ZONE IS UNCONTROLLED. 3 (THREE LEAD*) ** APPLIES ICTWEEN L| AND L2 4k APPLIES BETVEEN L» AND 9INCH (12.70 MM) FROM SEATIND m.ANE DIAMETER 8 UNeONTMOLLEC IN L) AND IEYONO .5 INCH (12.70MM FROM SEATING PLANE. MAXIMUM ALLOWABLE RATINGS TYPE C203Y C203YY C203A C203B C203C C203D REPETITIVE PEAK OFF-STATE - VOLTAGE,VDRM<1) Tc " -65 C to +125 C
30 Volts
60 Volts
100 Volts
200 Volts
300 Volts
400 Volts
VOLTAGE, VDRM(2) Tc - -65°C to +125°C 1000 ohms maximum. 2 Values apply for zero or negative gate voltage only. RMS On-State Current, IT(RMS) (^ Conduction Angles) Peak One Cycle Surge (non-rep) On-State Current, ITSM Peak Gate Power Dissipation, PGM Average Gate Power Dissipation, PG(AV) Peak Positive Gate Current, IQM Peak Negative Gate Voltage, VGM • Storage Temperature, TSTG Operating Junction Temperature, Tj
0.8 Amperes
8.0 Amperes
.1.0 Watts for 8.3 msec.
0.01 Watts
0.5 Amperes
8 Volts
-65°C to+150°C -65°C to+1256C Quality Semi-Conductors
(All Types) DC Gate Trigger Current DC Gate Trigger Voltage Peak On-State Voltage Holding Current Critical Rate-of-Rise of Off-State Voltage Circuit Commutated Turn-Off Time Steady-State Thermal Resistance SYMBOL IRRM or IDRM IGT VGT VTM IH dv/dt tq R0JC R0JA WIN. 0.1 TYP. MAX. 1.0 200 500 0.8 1.0 1.5 5.0 10.0 125 230 UNITS uA /nAdc Vdc V mAdc V/A/sec /jsec °C/W TEST CONDITIONS Tc = +25°C, RGK = 1000 ohms VRRM = VDRM = Rated Value. Tc = +1256C, RGK = 1000 ohms VRRM = VDRM = Rated Value. Tc = +25°C, VD = 6Vdc, RL = 100 ohms. Tc = -65°C, VD = 6Vdc, RL = 100 ohms. Tc = +25°C, VD = 6Vdc, RL = 100 ohms. Tc = -65°C, VD = 6Vdc, RL = 100 ohms. TC=+125°C, Rated VDRM, RL = 1000 ohms. Tc =+250C,ITM = l.OApeak, 1 msec, wide pulse, Duty Cycle < 2% Anode source voltage = 12Vdc, RGK = 1000 ohms. Tc = +25°C. Tc = -65°C Tc = +125°C, Rated VDRM, RGK = 1000 ohms. Tc = +125°C, rectangular current waveform. Rate-of-rise of current <10A/Msec. Rate reversal of current <5A//isec. ITM = 1A (SO^sec. pulse). Rep. Rate = 60pps. VRRM = Rated, VRX = 15VMin., VDRM = Rated. Rate-of-rise of reapplied off-state voltage = 20V/jusec.; Gate Bias = 0 Volts, 100 Ohms (during turn-off time interval). Junction-to-case (flat side of case is temperature reference point). Junction-to-ambient (free convection).