2SC1971 MITSUBISHI | Alldatasheet
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MITSUBISHI RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE
DESCRIPTION
25C1971 is a silicon NPN epitaxial planar type transistor designed OUTLINE DRAWING dimensionsinmm for RF power amplifiers on VHF band mobile radio applications. s120.7,, 93.6202 FEATURES 7 . 7 3 LEO fe © High power gain: Gpe > 10d8 it @Vcc = 13.5V, Po = BW, f= 175MHz Bs ay © Emitter ballasted construction, gold metallization for high e} ete reliability and good performances. | i © 70-220 package similar is combinient for mounting. 3S © Ability of withstanding more than 20:1 load VSWR when i> | « lye operated at Voc = 15.2V, Po = GW, f = 175MHz. Ts o+oe
2 FW Apes tag
APPLICATION 3 3 ~° 4 to 5 watts output power amplifiers in VHF band applications. s) 8 Hi ® i? tyes +0.10 a 25 hosto.19 9.5MAX 3 3 + i PIN: os @ BASE @ EMITTER (FIN) @® COLLECTOR T-30E ® Fin (emitter) ABSOLUTE MAXIMUM RATINGS (1c=28'c unless otherwise specified) [svmbor TO Parameser TT Cotions Ratings Tun | Vooo | Collectortobaevoise | | Veco _[ Emiteropesevotae Collector to enter vlogs 1 Rae=e a a | A | Ta=2s¢ pos Po Collector dsioation 2 — Te=2se ee [ti | unetion emperawre ts [tsa | Storosetenperowre Ts to soe SS eee Thermal resistance Note, Above parameters ave guaranteed independent ELECTRICAL CHARACTERISTICS (1c =25°C unies otherwise soecities) , 1 Symbol arammeter fest conditions: Unit Ermiter to ba breakdown voltage [iessmaviono | | Viemcso| Collector to base breakdownvoline on tOmacteso | 8 Tv | Viemceo| Collector eniter breakdown vole | lo s0ma Roce | |Tv | tcso | Coltecrorentotteurent | (Vowm2Vtemo || 00 || [Tes] river cut een veo=3V, 1e=0 t [soo fa | OC forward crrent gon Vee =10V. 1o=018 “a pe ia Outout power {6 Note. #Pulse test, Pw=150us. duty=5% Nov." 97
4 MITSUBISHI
MITSUBISHI RF POWER TRANSISTOR 28¢1971 NPN EPITAXIAL PLANAR TYPE NPN EPITAXIAL PLANAR TYPE TEST CIRCUIT f=175MHz TR Zin =50Q 10D, 1/2T 100,2T.3P Zout=502 to 30pF 100, to 50pF SP 100, 47, 1P to 45pF REC to 45pF to SOpF Cy: 0.05urF Cy: 150pF, 0.03uF, 0.03uF, 33yF in parallel +Voo TYPICAL PERFORMANCE DATA COLLECTOR DISSIPATION VS. COLLECTOR CURRENT VS. AMBIENT TEMPERATURE COLLECTOR TO EMITTER VOLTAGE 20 1.0) [eee | | [oem |] et | tt) | , Peeps S <o PET): peeps 2 z | et] i 2 -— 2 0.6 — 3 tin} © P| a 5 ‘FES a. 46e=— et e | Reks § ioe DTS] ECs Sees oer 0 40 80 12¢ 1 2 1 AMBIENT TEMPERATURE Ts ec) COLLECTOR TO EMITTER VOLTAGE Vee (V} COLLECTOR TO EMITTER BREAKDOWN DC CURRENT GAIN VS. VOLTAGE VS. . COLLECTOR CURRENT BASE TO EMITTER RESISTANCE 100 60, PS f rTP Tey] 6 “UNE a eae es of INL LUT
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: | 22 (oooPsoooo TOTO) yA Ss 3 83 | COC PSS TET ge °C F dE ‘ 0.0701 0.2 03 0507 1 2 3 1020 30 50 70100 200 300 5007001k COLLECTOR CURRENT Ic (A) BASE TO EMITTER RESISTANCE Ree (2) NOV." 97 ate MisusisH ELECTRIC
MITSUBISHI RF POWER TRANSISTOR 2801971 NPN EPITAXIAL PLANAR TYPE OUTPUT POWER, COLLECTOR OUTPUT CAPACITANCE VS. COLLECTOR EFFICIENCY _ COLLECTOR TO BASE VOLTAGE VS. INPUT POWER 4S 100, 104 100 s fT y TT yy = 5 To=25" ee a a aration 4 3 i SCT a Voo=13.5v a lo = et RT 2 7 3 Ea a © DOTer ae, 3 ee » ATT TT, : eC BARE, | 2 ie eee ere
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3 4 2 3 5 7 10 20 30 =©50 70100 5 0.2 0.4 0.6 0.8 ao COLLECTOR TO BASE VOLTAGE Veg (V) INPUT POWER Pin (W) OUTPUT POWER VS. COLLECTOR SUPPLY VOLTAGE “Tee TT TFT] © Leer | Bee 2 erie 8 eet rr EOC CCC oceeeoo 8 10 12 14 16 18 COLLECTOR SUPPLY VOLTAGE Vec (V) NOV. ' 97 MITSUBISHI ate SUBS