SIGC185T170R2C INFINEON | Alldatasheet
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Technical content
Edited by INFINEON Technologies AI PS DD HV3, L 7371M, Edition 2, 04.09.2003 IGBT Chip in NPT-technology This chip is used for:
- IGBT-Module BSM100GB170DL FEATURES:
- 1700V NPT technology
- 280µm chip
- short circuit prove
- positive temperature coefficient
- easy paralleling Applications:
- drives G C E Chip Type VCE ICn Die Size Package Ordering Code SIGC185T170R2C 1700V 100A 13.56 x 13.56 mm2 sawn on foil Q67041-A4697- A001 MECHANICAL PARAMETER: Raster size 13.56 x 13.56 Area total / active 183.87 / 141.6 Emitter pad size 8 x ( 2.38x3.98 ) Gate pad size 0.757 x 1.48 mm2 Thickness 280 µm Wafer size 150 mm Flat position 90 deg Max.possible chips per wafer 72 pcs Passivation frontside Photoimide Emitter metalization 3200 nm Al Si 1% Collector metalization 1400 nm Ni Ag – system suitable for epoxy and soft solder die bonding Die bond Electrically conductive glue or solder Wire bond Al, ≤ 500µm Reject Ink Dot Size ∅ 0.65mm ; max 1.2mm Recommended Storage Environment store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C
Edited by INFINEON Technologies AI PS DD HV3, L 7371M, Edition 2, 04.09.2003 MAXIMUM RATINGS : Parameter Symbol Value Unit Collector-emitter voltage , Tj=25 °C VCE 1700 V DC collector current, limited by T jmax IC 1 ) A Pulsed collector current, t p limited by Tjmax Icpul s 300 A Gate emitter voltage VGE ±20 V Operating junction and storage temperature Tj, T stg -55 ... +150 °C 1 ) depending on thermal properties of assembly STATIC CHARACTERISTICS (tested on chip), Tj=25 °C, unless otherwise specifi ed: Value Parameter Symbol Conditions min. typ. max. Unit Collector-emitter breakdown voltage V(BR)CES VGE=0V , IC=6mA 1700 Collector-emitter saturation voltage VCE(sat) VGE=15V, IC=100A 2.2 2.7 3.2 Gate-emitter threshold voltage VGE(th) IC=4.4mA , VGE=VCE 4.5 5.5 6.5 V Zero gate voltage collector current ICES VCE=1700V , VGE=0V 24 µA Gate-emitter leakage current IGES VCE=0V , VGE=20V 480 nA Integrated gate resistor RGint 2.5 Ω DYNAMIC CHARACTERISTICS (tested at component): Value Parameter Symbol Conditions min. typ. max. Unit Input capacitance Ciss - 7 - Output capacitance Coss - tbd - Reverse transfer capacitance Crss VCE =25V, VGE =0V, f=1MHz - 0.3 - nF SWITCHING CHARACTERISTICS (tested at component) , Inductive Load: Value Parameter Symbol Conditions 1) min. typ. max. Unit Turn-on delay time td(on) - 100 - Rise time tr - 100 - Turn-off delay time td(off ) - 900 - Fall time tf Tj=125 ° C VCC =900V, IC =100A VGE =± 15V, RG=15 Ω - 30 - ns 1) values also influenced by parasitic L- and C- in measurement and package.
Edited by INFINEON Technologies AI PS DD HV3, L 7371M, Edition 2, 04.09.2003 CHIP DRAWING:
Edited by INFINEON Technologies AI PS DD HV3, L 7371M, Edition 2, 04.09.2003 FURTHER ELECTRICAL CHARACTERISTICS: This chip data sheet refers to the device data sheet BSM100GB170DL Half-Bridge Description: AQL 0,65 for visual inspection according to failure catalog Electrostatic Discharge Sensitive Device according to MIL -STD 883 Test-Normen Villach/Prüffeld Published by Infineon Technologies AG , Bereich Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 2002 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technica l change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non -infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives world -wide (see address list). Warnings Due to technical requirement s components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies components may only be used in life -support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life -support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and / or maintain and sustain and / or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.