C184 NJSEMI | Alldatasheet

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, Una. HIGH SPEED Silicon Controlled Rectifier I C184,C185 I

600 Volts

C184 and C185 Silicon Controlled Rectifiers are de- signed for power switching at high frequencies. These are all-diffused Pic Pac devices, employing the field-proven amplifying gate. FEATURES: High di/dt Ratings. High dv/dt Capability. Excellent Surge and I2t Ratings Providing Easy Fusing. Guaranteed Maximum Turn-Off Time with Selections Available. Rugged Hermetic Package with Long Creepage Path. MAXIMUM ALLOWABLE RATINGS TYPES C184/C185A C184/C185B C184/C185C C184/C185D C184/C185E C184/C185M C185S C185N REPETITIVE PEAK OFF-STATE VOLTAGE, VDHM1 Tj - -40°C to -H25°C

100 Volts

VOLTAGE. VRRM» Tj - -40°C to -H25°C REVERSE VOLTAGE, VRSM 1 Tj » +125°C

200 Volts

1 Half sinewave waveform, 10 ms max. pulse width. RMS On-State Current, IT<RMS) 300 Amperes Critical Rate-of-Rise of On-State Current, Non-Repetitivef 800 A/jus Critical Rate-of-Rise of On-State Current, Repetitivef 500 A/jus Peak One Cycle Surge (Non-Repetitive) On-State Current, ITSM (60 Hz) 3500 Amperes Peak One Cycle Surge (Non-Repetitive) On-State Current, 1TSM (50 Hz) 3200 Amperes I2t (for fusing) for times > 1.5 milliseconds 35,000 (RMS Ampere)2 Seconds I2t (for fusing) for times > 8.3 milliseconds 50,000 (RMS Ampere)2 Seconds Average Gate Power Dissipation, PQ(AV) 2 Watts Storage Temperature, Tstg -4Q°C to +150°C Operating Temperature, Tj -40°C to +125°C Stud Torque 300 Lb-In (Max.), 250 Lb-IN (Min) 34 N-m (Max.), 28 N-m (Min.) NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by N.I Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verity that datasheets are current before placing orders. Quality Semi-Conductors

C184.C185 CHARACTERISTICS TEST Repetitive Peak Reverse and Off-State Current Repetitive Peak Reverse and Off-State Current Thermal Resistance Critical Rate-of-Rise of Off-State Voltage (Higher values may cause device switching) Holding Current DC Gate Trigger Current DC Gate Trigger Voltage Peak On-State Voltage Turn-On Delay Time Conventional Circuit Commutated Turn-Off Time (with Reverse Voltage) Conventional Circuit Commutated Turn-Off Time (with Feedback Diode) 'i» SYMBOL IRRM and IDRM IRRM and IDRM R0JC dv/dt Hfc IH IGT VGT VTM ta tq C184 C185 (diode) C184 C18S WIN. 200 tier minim 0.15 TYP. IS .12 500 um dv/dt 125 175 100 2.3 MAX. .15 selections 500 300 500 250 5.0 3.0 2.85 t t UNITS mA mA °C/Watt V/MSec available — mAdc mAdc Vdc Volts Msec Msec Msec TEST CONDITIONS Tj = +25°C, V = VDRM . VRRM Tj = 125°C, V- VDRM - VRRM Junction-to-Case Tj = +12S°C, Gate Open. VDRM = Rated, linear or exponential rising waveform. Exponential dv/dt = ^£5" (.632) consult factory. Tc = +25°C, Anode Supply = 24 Vdc. Initial On-State Current = 2,5 Amps. Tc = +25°C, VD = 6 Vdc, RL = 3 Ohms Tc = -40°C, VD = 6 Vdc, RL = 3 Ohms Tc = -M25°C, VD = 6 Vdc, RL = 3 Ohms Tc=-400CtoO°C,VD =6 Vdc, RL = 3 Ohms Tc = 0°C to +125°C, VD = 6 Vdc, RL = 3 Ohms Tc =+125°C, VDRM, RL = 1000 Ohms Tc - +25°C, ITM = 1500 Amps Peak. Duty Cycle < .01%. Tc = +25°C, 1T = 50 Adc, VDRM. Gate Supply: 20 Volt Open Circuit, 20 Ohm, 0.1 Msec max. Rise Time. (1) Tc = +125°C (2) ITM = 250 Amps. (3) VR = 50 Volts Min. (4) VDRM (Reapplied) (5) Rate-of-Rise of Reapplied Off-State Voltage = 200 V/Msec (linear) (6) Commutation di/dt = 12.5 Amps/Msec. (7) Duty Cycle < .01%. (8) Gate Bias During Turn-Off Interval = 0 Volts, 100 Ohms. (1) Tc =+125°C (2) ITM = 25° Amps, (3) VR = 1 Volt (4) VDRM (Reapplied) (5) Rate-of-Rise of Reapplied Off-State Voltage = 200 V/Msec (linear) (6) Commutation di/dt = 12.5 Amps/Msec. (7) Duty Cycle < .01%. (8) Gate Bias During Turn-Off Interval = 0 Volts, 100 Ohms. fConsult factory for maximum turn-off time.