C180 NJSEMI | Alldatasheet

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J 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. High Power Silicon Controlled Rectifier

1300 Volts 235 A RMS

TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 I C180 I AMPLIFYING GATE C180 Silicon Controlled Rectifier is designed for phase control applications. This is an all-diffused Pic-Pac device, employing the field-proven amplifying gate. FEATURES:

  • High di/dt Ratings
  • High dv/dt Capability with Selections Available
  • Excellent Surge and I2t Ratings Providing Easy Fusing
  • Rugged Hermetic Package with Long Creepage Path MAXIMUM ALLOWABLE RATINGS TYPE C180A C180B C180C C180D C180E C180M C180S C180N C180T C180P C180PA C180PB C180PC REPETITIVE PEAK OFF-STATE VOLTAGE, VDRM' Tj - -40°C to -H25°C

100 Volts

VOLTAGE, VRRMi Tj = -40°C to +125°C REVERSE VOLTAGE, VRSM1 Tj = +125°C

200 Volts

1 Half sinewave waveform, 10 msec. max. pulse width. RMS On-State Current, IT(RMS) 235 Amperes (All Conduction Angles) Average On-State Current, IT(AV) • • • Depends on Conduction Angle (See Charts) Peak One-Cycle Surge (Non-Repetitive) On-State Current, ITSM (60 Hz) 3500 Amperes Peak One-Cycle Surge (Non-Repetitive) On-State Current, ITSM (50 Hz) 3200 Amperes Critical Rate-of-Rise of On-State Current (Non-Repetitive)* 800 A/JUS Critical Rate-of-Rise of On-State Current (Repetitive)* 500 A/MS I2t (for fusing), for times > 1.5 milliseconds 32,000 (RMS Ampere)2 Seconds Peak Gate Power Dissipation, PGM 10 Watts Average Gate Power Dissipation, PG(AV) 2 Watts Storage Temperature, Tstg -40°C to +150°C Operating Temperature, Tj -40°C to +125°C ' 28 N-m (Min.) - 34 N-m (Max.) Quality Semi-Conductors

Off-State Voltage. (Higher values may cause device switching.) SYMBOL JDRM and JRRM !DRM and !RRM R0jc dv/dt WIN. 200 TYP. .12 500 MAX. .14 UNITS rnA mA °C/Watt V//isec | C180 TEST CONDITIONS Tj = +25°C VDRM = VRRM =

100 Volts Peak

Tj = -H25CC VDRM = VRRM = Tj = +125°C, VDRM = Rated Using Linear or Exponential Rising Waveform, Gate Open Circuited. Exponential dv/dt = (.632) Higher minimum dv/dt selections available - consult factory. Holding Current Turn-On Delay Time Gate Pulse Width Necessary to Trigger DC Gate Trigger Current DC Gate Trigger Voltage Peak On-State Voltage IH td JGT VGT VTM 0.15 100 1.25 2.3 500 150 200 125 3.0 2.85 mAdc fj.se c /isec mAdc Vdc Volts Tc = +25°C, Anode Supply = 24 Vdc. Initial On-State Current - 2.5 Amps. Tc = +25°C, IT = lOOAdc, VDRM = Rated Gate Supply: 10 Volt Open Circuit, 25 Ohm, 0.1 /usec max. rise time. Tc = 25°C, Gate Supply: 20 Volt Open Cir- cuit, 40 Ohm, .5 ftsec rise time. IT = 1 Amp. For High di/dt Capability, See Chart 7. Tc = +25°C, VD = 6 Vdc, RL = 3 Ohms Tc = -40°C, VD - 6 Vdc, RL = 3 Ohms Tc = -H25°C, VD * 6 Vdc, RL = 3 Ohms Tc = -40°C to +125°C, VD = 6 Vdc, RL =

3 Ohms

Tc = -H25°C, VD = Rated, RL = 1000 Ohms Tc = +25 °C, ITM * 1500 Amps. Peak Duty Cycle < 0.01%