C150 NJSEMI | Alldatasheet

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<^£,mi-(2onaua.toi LPioaucti, Qnc. High Power Silicon Controlled Rectifier

1300 VOLTS 110 ARMS

C150,2 AMPLIFYING GATE C150 and C152 Silicon Controlled Rectifiers are de- signed for pnase control applications. These are all-diffused, Pic-Pac devices employing the field-proven amplifying gate. FEATURES:

  • High di/dt Rating
  • High dv/dt Capability with Selections Available
  • Excellent Surge and I2t Ratings Providing Easy Fusing
  • Rugged Hermetic Package with Long Creepage Path MAXIMUM ALLOWABLE RATINGS . C152 TYPE C150, C152E C150, C152M C150, C152S C150, C152N C150, C152T C150, C152P C1SO, C152PA C150, C152PB C150, C152PC REPETITIVE PEAK OFF-STATE VOLTAGE, VOBM1 Tj = -40°C to +125°C

500 Volts

VOLTAGE, VRRM1 Tj - -40°C to +125°C REVERSE VOLTAGE, VRSM 1 Tj = +125°C

600 Volts

1 Half sinewave waveform, 10 msec. max. pulse width. RMS On-State Current, IT(RMS) ' • ' 10° Amperes (All Conduction Angles) Average On-State Current, IT(AV) Depes on Conduction Angle (See Charts 1 and 4) Peak One-Cycle Surge (Non-Repetitive) On-State Current, ITSM (60 Hz) . 1500 Amperes Peak One-Cycle Surge (Non-Repetitive) On-State Current, ITSM (50 Hz) . 1400 Amperes Critical Rate-of-Rise of On-State Current (Non-Repetitive)* 800 A/jus Critical Rate-of-Rise of On-State Current (Repetitive)* 500 A/ps I2t (for fusing), for times > 1.5 milliseconds 7000 (RMS Ampere)-4 Seconds Peak Gate Power Dissipation, PGM 10 Watts Average Gate Power Dissipation, PG(AV) 2 Watts Storage Temperature, Tstg -40°C to +150°C Operating Temperature, Tj -40°C to +125°C 14 N-m (Min.) - 17 N-m (Max.) *di/dt ratings established in accordance with EIA-NEMA Standard RS-397, Jon 5-2-2-6 for conditions of VDRM stated above; 20 volts, 20 ohms gate trigger source with 0.5 jUsec short circuit trigger current rise •

C150,C152 TEST Repetitive Peak Reverse and Off-State Current C150, C152E C150, C152M C150, C152S C1SO, C152N C150, C152T C150, C152P C150, C152PA C150, C152PB C150, C152PC Repetitive Peak Reverse and Off-State Current C150, C152E C150, C152M C150, C152S C150, C152N C150, C152T C150, C152P C150, C152PA C150, C152PB C150, C152PC Thermal Resistance Critical Rate-of-Rise of Off-State Voltage (Higher values may cause device switching) SYMBOL JDRM and !RRM !DRM and !RRM R0jc dv/dt MIN. 200 TYP. 500 MAX. UNITS mA mA °C/Watt V/ysec TEST CONDITIONS Tj = +25°C VDRM = VRRM =

500 Volts Peak

Tj = +125°C VDRM = VRRM Tj = +125°C, Rated VDRM, Using Linear Exponential Rising Waveform. Gate Open Circuited. VDRM Higher minimum dv/dt selections available - consult factory. Holding Current Turn-On Delay Time V Gate Pulse Width Necessary to Trigger DC Gate Trigger Current DC Gate Trigger Voltage Peak On-State Voltage Circuit , Commutated Turn-Off Time !H. td JGT VGT VTM tq 0.15 1.25 2.0 100 500 150 200 125 3.0 2.6 t mAdc /^sec Msec mAdc Vdc Volts jusec Tc = +25°C, Anode Supply = 24 Vdc. Initial Forward Current = 2 Amps. Tc = +25°C, IT = 50 Adc, VDRM = Rated. Gate Supply: 10 Volt Open Circuit, 20 Ohm, 0.1 jusec max. rise time Tc = +25°C. Gate Supply: 20 Volt Open Circuit, 40 Ohm, 0.5 /usec rise time. IT = 1.0 Amps, for High di/dt Capability. See Chart 9. Tc = +25°C, VD = 6 Vdc, RL = 3 Ohms Tc = -40°C, VD = 6 Vdc, RL ~ 3 Ohms Tc = +125°C, VD = 6 Vdc, RL = 3 Ohms Tc = -40°C to +120°C, VD = 6 Vdc, RL = 3 Ohms Tc =+125°C, VD = Rated, RL = 1000 Ohms Tc = +25°C, ITM = 500 Amps. Peak. Duty Cycle < 0.01% (1) Tj =+125°C (2) ITM = 50 Amps , (3) VR = 50 Volts Min. (4) VDRM (Reapplied) = Rated (5) Rate-of-Rise of Reapplied Off-State Voltage = 20V//usec Linear | Consult factory if guaranteed turn-off time is required. Typical turn-off time increases 30%, if IT.M is inaeased to 500 amps