C148 NJSEMI | Alldatasheet

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S.11S.U ucti, One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 HIGH SPEED Silicon Controlled Rectifier

1200 VOLTS

C148 Silicon Controlled Rectifier is designed for power switching at high frequencies. This is an Vll-dif fused device which is consider- able smaller in size than comparably rated high power SCR's. FEATURES:

  • Fully characterized for operation inverter and chopper applications.
  • High dv/dt with selections available.
  • Excellent surge and I2t ratings providing easy fusing.
  • Compact hermetic package, 54 — 28 stud. MAXIMUM ALLOWABLE RATINGS TYPES C148M C148S C148N C148T C148P C148PA C148PB REPETITIVE PEAK OFF-STATE VOLTAGE, VORM» Tj = -40°C to +125°C

600 Volts

VOLTAGE, VRRMl Tj = -40°C to +125°C REVERSE VOLTAGE, VRSM » Tj - +125°C

720 Volts

1 Half sinewave waveform, 10 ms max. pulse width. RMS On-State Current, IX(RMS) Peak One Cycle Surge (Non-Repetitive) On-State Current, ITSM (60 Hz) Peak One Cycle Surge (Non-Repetitive) On-State Current, ITSM (50 Hz) I2t (for fusing) for times > 1.5 milliseconds I2t (for fusing) for times > 8.3 milliseconds Critical Rate-of-Rise of On-State Current, Non-Repetitive Critical Rate-of-Rise of On-State Current, Repetitive Average Gate Power Dissipation, PQ(AV) Storage Temperature, Tstg Operating Temperature, Tj Stud Torque

63 Amperes

700 Amperes

670 Amperes

1360 (RMS Ampere)2 Seconds 2000 (RMS Ampere)2 Seconds

100 A/MS t

75 A/MS t

2 Watts

-40°Cto+150°C -40°Cto+125°C 30 Lb.-In.

3.4 N-rn

U na. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 TEST Repetitive Peak Reverse and Off-State Current Thermal Resistance Critical Rate-of-Rise of Off-State Voltage (Higher values may cause device switching) SYMBOL IRRM and JDRM R0jc dv/dt MIN. 200 TYP. MAX. .35 UNITS mA °C/Watt V/jusec TEST CONDITIONS Tj = -40°Cto+125°C, V = VDRM = VRRM Junction-to-Case Tj = +125°C, Gate Open. VDRM = Rated using Linear or Exponential Rising Waveform. V^DM Fxnnnenti-il dv/rtr - L>KM ( f.V*\\r minimum dv/dt selections available - consult factory. DC Gate Trigger Current DC Gate Trigger Voltage Peak On-State Voltage Conventional Circuit Commutated Turn-Off Time C148 - 30 CHS - 40 CHS - 30 CHS - 40 Conventional Circuit Commutated Turn-Off Time (with Feedback Diode) CHS - 30 CHS 40 IGT VGT VTM tq 0.25 150 300 125 3.0 3.5 4.0 t t mAdc Vdc Volts Msec Msec Tc = +25° C, VD = 6 Vdc, RL = 3 Ohms Tc = -40° C, VD = 6 Vdc, RL = 3 Ohms Tc = +125°C, VD = 6 Vdc, RL = 3 Ohms Tc = 25°C, VD = 6 Vdc, RL = 3 Ohms Tc = -40° C, VD = 6 Vdc, RL = 3 Ohms Tc = +125°C, Rated VDRM, RL =

1000 Ohms

Tc = +25 °C, ITM =500 Amps Peak, 1 millisecond wide pulse. Duty cycle < 1% (1) Tc =+125°C (2) ITM = 150 Amps. (3) VR = 50 Volts Min. (4) VDRM (Reapplied) (5) Rate-of-Rise of Reapplied Off -State Voltage = 20 V/jusec (linear). (6) Commutation di/dt = 5 Amps/^sec (7) Repetition Rate = 1 pps. (8) Gate Bias During Turn-Off Interval =

0 Volts, 100 Ohms

(1) Tc =+125°C (2) ITM = 150 Amps (3) VR = 50 Volts Min. (4) VDRM (Reapplied) (5) Rate-of-Rise of Reapplied Off-State Voltage = 200 V/Aisec (linear). (6) Commutation di/dt = 5 Amps/Msec. (7) Repetition Rate = 1 pps. (8) Gate Bias During Turn-Off Interval = 0 Volts, 100 Ohms. (1) Tc =+125°C (2) ITM = 15° Amps (3) VR = 1 volt (4) VDRM (Reapplied) (5) Rate-of-Rise of Off-State Voltage = 200 V//nsec (linear). (6) Commutation di/dt = 5 Amps/Msec. (7) Repetition Rate = 1 pps. (8) Gate Bias During Turn-Off Interval = 0 Volts, 100 Ohms. Quality Semi-Conductors

u<z£i. v/z 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 TERMINAL CAT! TERMINAL CATHOOC TERMINAL ANODE N THREAD SUE l/4-2» UNF-2A NOTE: I. COMPLETE THREADS TO WITHIN 2 1/2 THO. OF SEATING PLANE. SYM. A B C E F G H J K INCHES WIN. MAX. .422 .120 .534 1.230 029 .258 138 .115 .240 .169 452 .135 .565 1.290 .062 REF. REF .300 .182 METRIC MM WIN. MAX. 10.72 3.05 13.57 31.25 .74 6.55 3.50 2.83 6.10 4.30 11,47 3.42 14.34 32.78 1.56 REF REF 7.62 4.62 SYM. L M N P Q S T INCHES MIN. MAX. .090 .055 .831 .0)2 .220 .676 .115 .066 .901 .684 .597 METRIC MM MIN. MAX. 2.29 1.40 21.11 .31 5.59 17.18 2.91 L67 22.88 1736 15.15 Quality Semi-Conductors