C147 NJSEMI | Alldatasheet
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^Etnl-Conductoi ^Pioaucti, Line. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. C147 TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 The C147 Silicon Controlled Rectifier is designed for phase control applications. This is an all-diffused device which is considerably smaller in size than comparably rated high power SCR's. FEATURES:
- High dv/dt With Selections Available
- Excellent Surge and I2t Ratings, Providing Easy Fusing
- Compact, Hermetic Package, 1/4-28 Stud MAXIMUM ALLOWABLE RATINGS TYPE C147A C147B C147C C147D C147E C147M C147S C147N C147T C147P C147PA C147PB REPETITIVE PEAK OFF-STATE VOLTAGE, VDRM> T, --40°Cto +125°C
100 Volts
VOLTAGE, VRRM1 Tj - -40°C to +125°C ' 500 600 700 800 900 1000 1100 1200 NON-REPETITIVE PEAK REVERSE VOLTAGE, VRSM1 Tj - +125°C
150 Volts
Half sinewave waveform, 10msec. maximum pulse width. RMS On-State Current, IT(RMS) '- 63 Amperes (All Conduction Angles) Average On-State Current, IT(AV) Depends on Conduction Angles (See Charts 2 and 3) Critical Rate-of-Rise of On-State Current (Non-Repetitive) di/dt:* Switching From 1200 Volts 100 Amperes Per Microsecond Switching From 600 Volts 200 Amperes Per Microsecond Peak One-Cycle Surge (Non-Repetitive) On-State Current, ITSM (60 Hz) 1000 Amperes Peak One-Cycle Surge (Non-Repetitive') On-State Current, ITSM (50 Hz) 910 Amperes I2t (for fusing), for times > 8.3 milliseconds (See Figure 6) 4150 (RMS Ampere)2 Seconds I,2t (for fusing), for times > 1.5 milliseconds (See Figure 6) 2850 (RMS Ampere)2 Seconds 'Peak Gate Power Dissipation, PGM 100 Watts for 150 Microseconds . Average Gate Power Dissipation, PG(AV) 2 Watts Storage Temperature, Tstg -40°C to +150°C Operating Temperature, Tj -40°C to -H2S°C Maximum Stud Torque 30 Lb.-In. NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by N.I Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility tor any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors
Off-State Voltage, (Higher values may cause device switching) SYMBOL IpRM and 'RKM ICJT VGT VTM IH dv/dt MIN. 0.25 200 TYP. MAX. 6.5 150 300 3.5 250 UNITS mA mAdc Vdc Volts mAdc Volts/ /JSt'C TEST CONDITIONS Tj = -40°C to +125°C VDRM = VRRM =
100 Volts Peak
Tc = 25°C, VD = 12 Vdc, RL = 12 Ohms Tc = -40°C, VD = 12 Vdc, RL - 12 Ohms Tc = 25°C, VD = 12 Vdc, RL = 12 Ohms Tc = -40°C, VD = 12 Vdc, RL = 12 Ohms, Tc = +1 25°C, Rated VDRM , RL = 1 000 Ohms Tc = +25°C, ITM = 500 Amperes Peak, 1 Millisecond Wide Pulse. Duty Cycle < 1% Tc = +25°C, Anode Supply = 24 Vdc, Gate Supply = 10V/20 Ohms. Initial For- ward Pulse = 2 Amps., 0.1 Millisecond to 10 Milliseconds Wide. Tc = +125°C, Rated VDRM> Using Linear Kxponential Rising Waveform. Gate Open Circuited. VDRM Exponential dv/dt = (.632) Higher minimum civ/dt selection available - consult factory. Thermal Resistance Turn-Off Time Rfljc tq 125 .35 °C/Watt /usec Junction-to-Case (1) Tj * +12S°C (2) ITM = 150 Amps. Peak (3) VR = 50 Volts Min. (4) VDRM (Reapplied) (5) Rate-of-Rise of Reapplied Off-State Voltage = 20V/Aisec (Linear) (6) Commutation di/dt = 5 A/^sec (7) Repetition Rate = 1 PPS. (8) Gate Bias During Turn-Off Interval *