C1473

2SC1473 PANASONIC | Alldatasheet

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2SC1473, 2SC1473A Silicon NPN triple diffusion planer type For general amplification 2SC1473 complementary to 2SA1018 2SC1473A complementary to 2SA1767 n Features l High collector to emitter voltage VCEO . l High transition frequency fT. n Absolute Maximum Ratings (Ta=25˚C) Unit: mm Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature 1:Emitter 2:Collector 3:Base JEDEC:TO–92 EIAJ:SC–43A 5.0–0.2 4.0–0.2 5.1–0.213.5–0.5 0.45 +0.2 –0.10.45 +0.2 –0.1 1.27 1.27 2.3–0.2 2.54–0.15 213 Symbol V CBO V CEO V EBO ICP IC PC Tj Tstg Ratings 250 300 200 300 100 750 150 –55 ~ +150 Unit V V V mA mA mW 2SC1473 2SC1473A 2SC1473 2SC1473A n Electrical Characteristics (Ta=25˚C) Parameter Collector cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance Symbol I CEO V CEO V EBO hFE * V CE(sat) fT C ob Conditions V CE = 120V , IB = 0 V CE = 120V , IB = 0 IC = 100mA, IC = 0 IE = 1mA, IC = 0 V CE = 10V , IC = 5mA IC = 50mA, IB = 5mA V CB = 10V , IE = –10mA, f = 200MHz V CB = 10V , IE = 0, f = 1MHz min 200 300 typ max 220 1.2 Unit mA V V V MHz pF *hFE Rank classification Rank P Q R hFE 30 ~ 100 60 ~ 150 100 ~ 220 2SC1473 2SC1473A 2SC1473 2SC1473A

Transistor 2SC1473, 2SC1473A PC — Ta I C — V CE IC — V BE IC — IB V CE(sat) — IC IB — V BE hFE — IC fT — IE C ob — V CB 0 160 40 120 80 14020 100 60 1.0 0.8 0.6 0.4 0.2 0.9 0.7 0.5 0.3 0.1 Ambient temperature Ta (˚C) Collector power dissipation PC (W ) 01 0 826 4 120 100 IB=2mA 1.8mA 1.6mA 1.4mA 1.2mA 1.0mA 0.8mA 0.2mA 0.4mA 0.6mA Ta=25˚C Collector to emitter voltage VCE (V) Collector current IC (mA ) 120 100 VCE =10V Ta=75˚C –25˚C 25˚C Base to emitter voltage VBE (V) Collector current IC (mA ) 120 100 VCE =10V Ta=25˚C Base current IB (mA ) Collector current IC (mA ) 0.1 1 10 1000.3 3 30 0.01 0.03 0.1 0.3

100 IC /IB=10

Ta=75˚C 25˚C –25˚C Collector current IC (mA ) Collector to emitter saturation voltage VCE(sat) (V) 3.0 2.5 2.0 1.5 1.0 0.5 VCE =10V Ta=25˚C Base to emitter voltage VBE (V) Base current IB (mA ) 0.1 1 10 1000.3 3 30 360 300 240 180 120 VCE =10V Ta=75˚C 25˚C –25˚C Collector current IC (mA ) Forward current transfer ratio hFE 160 120 100 140 VCB =10V Ta=25˚C Emitter current IE (mA ) Transition frequency fT (MHz ) 1 3 10 30 100 IE=0 f=1MHz Ta=25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF)

Transistor 2SC1473, 2SC1473A ICBO — Ta I EBO — Ta Area of safe operation (ASO) 0 200 16040 120 80 102 103 104 VCB =250V Ambient temperature Ta (˚C) ICBO (Ta) ICBO (Ta=25˚C) 0 200 16040 120 80 102 103 104 VEB =5V Ambient temperature Ta (˚C) IEBO (Ta) IEBO (Ta=25˚C) 1 10 100 10003 30 300 0.1 0.3 100 300

1000 Single pulse

Ta=25˚C t=10ms 2SC1473A 2SC1473 t=1ms DC ICP IC Collector to emitter voltage VCE (V) Collector current IC (mA )