C1318

2SC1317 PANASONIC | Alldatasheet

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Parameter Symbol Conditions Min Typ Max Unit Collector cutoff current I CBO VCB = 20 V, IE = 0 0.1 µA Collector to 2SC1317 V CBO IC = 10 µA, IE = 03 0V base voltage 2SC1318 60 Collector to 2SC1317 V CEO IC = 10 mA, IB = 02 5V emitter voltage 2SC1318 50 Emitter to base voltage V EBO IE = 10 µA, IC = 07 V Forward current transfer ratio *1 hFE1 *2 VCE = 10 V, IC = 150 mA 85 340 hFE2 VCE = 10 V, IC = 500 mA 40 Collector to emitter saturation voltage *1 VCE(sat) IC = 300 mA, IB = 30 mA 0.35 0.6 V Base to emitter saturation voltage *1 VBE(sat) IC = 300 mA, IB = 30 mA 1.1 1.5 V Transition frequency f T VCB = 10 V, IE = −50 mA, f = 200 MHz 200 MHz Collector output capacitance C ob VCB = 10 V, IE = 0, f = 1 MHz 6 15 pF 2SC1317, 2SC1318 Silicon NPN epitaxial planer type For low-frequency power amplification and driver amplification Complementary to 2SA719 and 2SA720 I Features

• Low collector to emitter saturation voltage V CE(sat)
• Complementary pair with 2SA719 and 2SA720 I Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector to 2SC1317 V CBO 30 V base voltage 2SC1318 60 Collector to 2SC1317 V CEO 25 V emitter voltage 2SC1318 50 Emitter to base voltage V EBO 7V Peak collector current I CP 1A Collector current I C 500 mA Collector power dissipation P C 625 mW Junction temperature T j 150 °C Storage temperature T stg −55 to +150 °C I Electrical Characteristics Ta = 25°C ± 3°C Note) *1: Pulse measurement *2: Rank classification Rank Q R S hFE1 85 to 170 120 to 240 170 to 340 1: Emitter 2: Collector 3: Base Unit: mm 5.0±0.2 0.7±0.1 (1.27) 132 2.54±0.15 (1.27) 2.3±0.2 0.45+0.15 –0.1 0.45+0.15 –0.1 0.7±0.2 5.1±0.213.5±0.5 4.0±0.2

2SC1317, 2SC1318 Transistors PC  Ta IC  VCE IC  IB VCE(sat)  IC VBE(sat)  IC hFE  IC fT  IE 0 160 40 120 80 14020 100 60 200 600 400 800 100 500 300 700 Ambient temperature Ta (°C) Collector power dissipation PC (mW) 02 0 48 1 6 12 1826 1 4 10 800 700 600 500 400 300 200 100 IB = 10 mA 9 mA 8 mA 7 mA 6 mA 5 mA 4 mA 3 mA 2 mA 1 mA Collector to emitter voltage VCE (V) Collector current IC (mA) Ta = 25°C 01 0 86429 7531 800 700 600 500 400 300 200 100 Base current IB (mA) Collector current IC (mA) VCE = 10 V Ta = 25°C 0.01 0.03 0.01 0.03 0.1 0.3 100 0.1 0.3 1 3 10 Collector to emitter saturation voltage VCE(sat) (V) Collector current IC (A) IC / IB = 10 Ta = 75°C 25°C −25°C 0.01 0.03 0.01 0.03 0.1 0.3 100 0.1 0.3 1 3 10 Base to emitter saturation voltage VBE(sat) (V) Collector current IC (A) IC / IB = 10 Ta = 75°C −25°C 25°C 0.01 0.03 300 250 200 150 100 0.1 0.3 1 3 10 25°C −25°C Forward current transfer ratio hFE VCE = 10 V Ta = 75°C Collector current IC (A) 240 200 160 120 Transition frequency fT (MHz) Emitter current IE (mA) VCB = 10 V Ta = 25°C 31 0 55 02 20 30 100 Collector output capacitance Cob (pF) Collector to base voltage VCB (V) IE = 0 f = 1 MHz Ta = 25°C 13 10 30 100 300 1 000 120 100 Collector to emitter voltage VCER (V) Base to emitter resistance RBE (kΩ) IC = 2 mA Ta = 25°C 2SC1318 2SC1317 Cob  VCB VCER  RBE

Transistors 2SC1317, 2SC1318 0 200 1601208040 180 1401006020 VCE = 10 V 102 103 104 ICEO (Ta) ICEO (Ta = 25°C) Ambient temperature Ta (°C) 0.001 0.003 0.1 0.3 0.01 0.03 0.1 0.3 1 3 10 30 100 t = 1 s DC ICP IC Single pulse Ta = 25°C Collector to emitter voltage VCE (V) Collector current IC (A) t = 10 ms Area of safe operation (ASO)ICEO  Ta