DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
SILICON CONTROLLED RECTIFIER
4 AMP, 200 THRU 600 VOLTS
DESCRIPTION: The CENTRAL SEMICONDUCTOR C106B2 Series types are 4.0A, PNPN sensitive gate triggering silicon controlled rectifiers with voltages ranging from 200V to 600V. These devices are designed for applications such as temperature, light and speed control, and remote warning and triggering applications. MARKING: FULL PART NUMBER MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL C106B2 C106D2 C106M2 UNITS Peak Repetitive Off-State Voltage VDRM, VRRM 200 400 600 V RMS On-State Current (TC=85°C) I T(RMS) 4.0 A Peak One Cycle Surge Current, t=8.3ms I TSM 20 A I2t Value for Fusing I 2t 1.65 A 2s Peak Gate Power Dissipation (TC=80°C) P GM 0.5 W Average Gate Power Dissipation (TC=80°C) P G(AV) 0.1 W Peak Forward Gate Current (TC=80°C) I GFM 0.2 A Operating Junction Temperature T J -40 to +110 °C Storage Temperature T stg -40 to +150 °C Thermal Resistance ΘJC 7.5 °C/W Thermal Resistance ΘJA 80 °C/W ELECTRICAL CHARACTERISTICS: (TJ=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS IDRM, IRRM Rated V DRM, VRRM, RGK=1.0KΩ 10 μA IDRM, IRRM Rated V DRM, VRRM, RGK=1.0KΩ, TJ=110°C 100 μA VTM I T=4.0A 2.2 V IGT V D=6.0V, RL=100Ω 200 μA IGT V D=6.0V, RL=100Ω, TJ=–40°C 500 μA VGT V D=6.0V, RL=100Ω 0.4 0.8 V VGT V D=6.0V, RL=100Ω, TJ=–40°C 0.5 1.0 V IH V D=12V 3.0 mA I H V D=12V, TJ=–40°C 6.0 mA IH V D=12V, TJ=110°C 2.0 mA IL V D=12V 5.0 mA IL V D=12V, TJ=–40°C 7.0 mA dv/dt V D=Rated VDRM, RGK=1.0KΩ, TJ=110°C 8.0 V/μs TO-202-2 THYRISTOR CASE R0 (15-February 2011) www.centralsemi.com
SILICON CONTROLLED RECTIFIER LEAD CODE: 1) Cathode 2) Anode 3) Gate Tab is common to pin 2 MARKING: FULL PART NUMBER TO-202-2 THYRISTOR CASE - MECHANICAL OUTLINE www.centralsemi.com R0 (15-February 2011)