C106D1

C106A1 CENTRAL | Alldatasheet

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SILICON CONTROLLED RECTIFIER

4 AMP, 100 THRU 600 VOLTS

DESCRIPTION: The CENTRAL SEMICONDUCTOR C106A1 series are PNPN silicon controlled rectifiers designed for applications such as temperature, light, speed control, process and remote control, and warning systems where reliability of operation is important. MARKING: FULL PART NUMBER MAXIMUM RATINGS: (TC=25°C unless otherwise noted) C106 C106 C106 C106 C106 C106 SYMBOL A1 B1 C1 D1 E1 M1 UNITS Peak Repetitive Off-State Voltage VDRM, VRRM 100 200 300 400 500 600 V RMS On-State Current I T(RMS) 4.0 A Peak One Cycle Surge (60Hz) I TSM 20 A I2t Value for Fusing (t>1.5ms) I 2t 0.5 A 2s Peak Gate Power P GM 0.5 W Average Gate Power P G(AV) 0.1 W Peak Forward Gate Current I GFM 0.2 A Peak Reverse Gate Voltage V GRM 6.0 V Storage Temperature T stg -40 to +150 °C Junction Temperature T J -40 to +110 °C Thermal Resistance ΘJC 3.0 °C/W Thermal Resistance ΘJA 75 °C/W ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS IDRM, IRRM Rated V DRM, VRRM, RGK=1.0KΩ 10 μA IDRM, IRRM Rated V DRM, VRRM, RGK=1.0KΩ, TC=110°C 100 μA VTM I FM=4.0A 2.2 V IGT V AK=6.0V, RL=100Ω, RGK=1.0KΩ 200 μA IGT V AK=6.0V, RL=100Ω, RGK=1.0KΩ, TC=-40°C 500 μA VGT V AK=6.0V, RL=100Ω, RGK=1.0KΩ 0.4 0.8 V VGT V AK=6.0V, RL=100Ω, RGK=1.0KΩ, TC =-40°C 0.5 1.0 V VGT V AK=Rated VDRM, RL=3.0KΩ, RGK=1.0KΩ, TC=110°C 0.2 V IHX V D=12V, RGK=1.0KΩ 0.3 3.0 mA IHX V D=12V, RGK=1.0KΩ, TC=-40°C 0.4 6.0 mA IHX V D=12V, RGK=1.0KΩ, TC=110°C 0.14 2.0 mA ILX V D=12V, RGK=1.0KΩ 0.3 4.0 mA ILX V D=12V, RGK=1.0KΩ, TC=-40°C 0.4 8.0 mA dv/dt V D=Rated VDRM, RGK=1.0KΩ, TC=110°C 8.0 V/μs tgt (turn-on time) 1.2 μs tq (turn-off time) 40 μs TO-202 CASE R1 (23-January 2012) www.centralsemi.com

SILICON CONTROLLED RECTIFIER LEAD CODE: 1) Cathode 2) Anode 3) Gate Tab is common to pin 2 MARKING: FULL PART NUMBER TO-202 CASE - MECHANICAL OUTLINE www.centralsemi.com R1 (23-January 2012)