C103Y CENTRAL | Alldatasheet

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(SEE REVERSE SIDE) C103Y C103YY C103A C103B SILICON CONTROLLED RECTIFIER

0.8 AMP, 30 THRU 200 VOLTS

DESCRIPTION

The CENTRAL SEMICONDUCTOR C103 Series types are Epoxy Molded Silicon Controlled Rectifiers designed for control systems and sensing circuit applications. MAXIMUM RATINGS (TC=25°C unless otherwise noted) SYMBOL C103Y C103YY C103A C103B UNITS Peak Repetitive Off-State Voltage V DRM, VRRM 30 60 100 200 V RMS On-State Current (TC=60°C) I T(RMS) 0.8 A Peak One Cycle Surge I TSM 8.0 A Peak Forward Gate Current I GM 0.5 A Peak Reverse Gate Voltage V GM 8.0 V Peak Gate Power Dissipation (tp=8.3ms) P GM 1.0 W Average Gate Power Dissipation P G(AV) 0.01 W Storage Temperature T stg -65 to +150 °C Junction Temperature T J -65 to +125 °C ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS M I N TYP MAX UNITS IDRM, IRRM Rated V DRM, VRRM, RGK=1KΩ 1 . 0 µA IDRM, IRRM Rated V DRM, VRRM, TC=125°C, RGK=1KΩ 5 0 µA IGT V D=6.0V, RL=100Ω, RGK=1KΩ 2 0 0 µA IGT V D=6.0V, RL=100Ω, RGK=1KΩ, TC= - 6 5 ° C 5 0 0 µA IH R GK=1KΩ 5 . 0 m A IH R GK=1KΩ, TC= - 6 5 ° C 1 0 m A VGT V D=6.0V, RL=100Ω 0 . 8 V VGT V D=6.0V, RL=100Ω, TC=-65°C 1.0 V VGT V D=6.0V, RL=1KΩ, TC= 1 2 5 ° C 0 . 1 V VTM I TM= 1 . 0 A 1 . 5 V dv/dt V D=VDRM, TC=125°C, RGK=1KΩ 2 0 V / µs

C103 SERIES SILICON CONTROLLED RECTIFIER TO-92 PACKAGE - MECHANICAL OUTLINE G A B F E IH C D 1 2 3 MIN MAX MIN MAX A (DIA) 0.175 0.205 4.45 5.21 B 0.170 0.210 4.32 5.33 C 0.500 - 12.70 - D 0.016 0.022 0.41 0.56 E F G 0.125 0.165 3.18 4.19 H 0.080 0.105 2.03 2.67 I TO-92 (REV: R1) 0.015 0.38 DIMENSIONS SYMBOL INCHES MILLIMETERS 0.100 2.54 0.050 1.27 Lead Code: 3) Cathode 2) Gate 1) Anode