BZW20 SIEMENS | Alldatasheet
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25¢ D MM 4235605 0004877 2 MMSIEG . T2901 Controlunit = 256 O4877 OT BZW 20 ~ SIEMENS AKTIENGESELLSCHAF This component, a transistor with integrated base emitter resistance and aZ diode, inTO 236 case (24 A 3 DIN 41869) is designed for use as control unit in various professional and industrial electronic circuits. Due to the compact design of microelectronic circuits, it is particularly suitable for hybrid circuits in thick and thin film technology. The type is marked with the code letters “TZ”. Type Mark Ordering code Twee__| Mark} Orden co _ 4095 +005 Bzw20 | 12 62702-21387 ¢ + Ol 20m z yc H K Cireuit diagram 94g, (Y = ne in| ty = as Wat *E Approx. weight 0.02 g Dimensions in mm Maximum ratings Collector-emitter voltage : Vceo 20 Vv Base-emitter voltage Vee 8.410 9.5 v Collector current Ic 100 mA Base current i, 10 mA Storage temperature range Tstg -55 to +125 °C Junction temperature 7 116 °c Total power dissipation (Temp $45 °C) Prot 150 mw ‘Thermal resistance . Junction to ambient air if mounted on: Glass substrate (7 x 7 x 1mm) Rinsa <700 K/wW Glass fiber substrate (30 x 12 x1.6 mm) Rings <450 K/w Ceramic substrate (30 x 12 x 1mm) Rina <450 Kw
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25C D MM 8235605 0004878 4 MBSIEG 25c 04878 9 0-F~ 29-/5 BZW 20 Static characteristics (Tamy = 25°C) Collector cutoff current (Vog = 20 V) Ieeo <100 nA (Weg = 20 V; Tamb = 125°C) kero <30 HA Collector-emitter breakdown voltage Uc = 100 yA) Verjceo | >20 v : DC current gain (Ig = 50 mA; Vog = 1.5V) Dee >15 - Collector-emitter saturation voltage. (Ig = 18 mA; Iz = 2 mA) Veesat <04 v Differential current gain Al. (Ig = 16 MA; Veg = 1.5 V) hte= Bie 250 - Differential transconductance = Ak {Ig = 18 mA; Veg = 1.5 V) s= we 700 ms e Total perm, power dissipation ‘Thermal resistance versus versus temperature substrate area iy Pot = # (Tare) W Pua =f(NF) 200 Da 0 a Con [fr ttle sbsrate Pa?st mm 17) Fy A [fo 2eBamais staat 30x12 am ANTE oo HOE eeeeeee fo CNR T weer 8 el re MECN CEE ig A | ECE OTN t COCCEP RCE NEC ‘ Matz COCCI EECCA EE PELE es COCPCErrAAT YT has mat COPPA Eee ner HEN 2 pail eo PCOCCP eee CEPCCC eee ee COCCCCECCCee NN) CEPEE Cee ere COC »>COCEEE iy e U i w we wo 5 5 nn? Tat —-" 924 8 - 2240 F-09 4
esc D M™ 6235605 ooo4ar9 b MESIEG ~ -25C 04879 0 T-24-IS — pzw20 —— SIEMENS AKTIENGESELLSCHAF Permissible pulse load for ceramic Permissible pulse toad for glasa. K substrate 30 x12 x1,5 mm K substrate 7 x7 x1mm thine = 10: ¥= parameter W te 71M v= parameter ofsigci seusevssuees! Metissuenigste= oc, ; He err Bsaniae => atic in eee LT PEA StS S57 jee etiaet| inc POE are Sino Hee HEH 5 Egon SH EHH ey aaa ae ! S92 Aal talianl atl Mr + IT ‘an it aim est eatietieet eeiisetl es ect est rere atiSetl| FEES ta EEHIEEHIE REC HIEHIE COCCI CONICET wos COTTE TT TMT Tit ot ARCTIC TARE TAT Tl of oS ot ot oe ol ws 08 8 ww ot ot ws Differential current gain: Differential transconductance bye = Fle) se st =flle) Veg= 1,5 Vi f= 1 kHe MS Veg=1,6 Vif =1 kHz 300 800 BEREP2 hy s 700 Fa AC 200 500 oA tt wt ALT w/t tt tt wet tt TT : LET EET 0 4 8 2 % «20 22mA 0 4 8 2 1% 20 22m . rh —|,