BYV73 NJSEMI | Alldatasheet
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20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 BYV73 SERIES SCHOTTKY-BARRIER DOUBLE RECTIFIER DIODES High-efficiency schottky-barrier double rectifier diodes in plastic envelopes featuring low forward voltage drop, low capacitance and absence of stored charge. They are intended for use in switched- mode power supplies and high-frequency circuits in general, where both low conduction losses and zero switching losses are essential. Their single chip (monolithic) construction allows both diodes to be paralleled without the need for derating. They can also withstand reverse voltage transients. The series consists of common-cathode types. A version with guaranteed reverse surge capability. BYV73—40A, is also available. QUICK REFERENCE DATA Per diode, unless otherwise stated Repetitive peak reverse voltage Output current (both diodes conducting) Forward voltage Junction temperature BYV73-30 35 VRRM max- 30 35 IQ max. VF < Ti < 40(A) 45 40 45 V
30 A -
0,6 V 150 OC MECHANICAL DATA Fig.1 SOT-93 Ha,l Dimensions in mm 3(a2l 2(k) f ~-~ 2.2 mox. { | dimensions within mis zone ore uncontrolled. j i i .15.2 , mox — 14 *• -13.6 - 4.25 r~ 4 1R *T.1O I 1 ^ D I R2^!r if 12.7 m IX -IJT1-3 i — i _ "min m n 1.15 l^~0.95 4.6 max. ... Z H m — 0.4 Net mass: 5 g Note: the exposed metal mounting base is directly connected to the common cathode. Accessories supplied on request: see data sheets Mounting instructions and accessories for SOT-93 envelopes. NJ Semi-Cooductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors
'FIRMS) max. max. RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134).
- Voltages (per diode) Repetitive peak reverse voltage VfiRM Crest working reverse voltage (note 1) Continuous voltage (note 1)
- Currents (both diodes conducting; note 2) Output current; square wave; 6 = 0.5; UP toTmb= 112°C (note3) R.M.S. forward current Repetitive peak forward current tp = 20 /is; 5 « 0.02 (per diode) Non-repetitive peak forward current (per diode) half sine-wave; Tj = 125 °C prior to surge; withreapp|iedVRWMrnax; t = 10 ms t = 8.3 ms 121 f or fusing (t = 10 ms, per diode) Reverse surge current (BYV73-40A only) tp= 100 us Temperatures Storage temperature Junction temperature BYV73-30 max. 30 max. 30 max, 30 40(A) 'FSM 'FSM "RSM 'stg max. max. max. 250 150 165 112 0.5 -40 to+150 150 V V V A A A A A2s CHARACTERISTICS (per diode) Forward voltage Reverse turrent Junction capacitance at f = 1 MHz VR = 5 V;Tj = 25 to 125 °C THERMAL RESISTANCE From junction to mounting base (both diodes conducting) From junction to mounting base (per diode) Influence of mounting method 1. Heatsink-mounted with clip (see mounting instructions) Thermal resistance from mounting base to heatsink a. with heatsink compound b. with heatsink compound and 0.06 mm maximum mica insulator (56378) c. with heatsink compound and 0.1 mm maximum mica insulator d. with heatsink compound and 0.25 mm maximum alumina insulator e. without heatsink compound 2. Free air operation The quoted values of to the same tie point. Thermal resistance from junction to ambient in free air; mounted on a printed circuit board at any device lead length and with-copper laminate on the board IR Rth j-mb Rth j-mb typ. 0.6 0.87 100 500 1.4 2.4 mA pF K/W K/W Rth mb-h Rth mb-h Rth mb-h = Rth mb-h Rth mb-h 0.2 1.4 2.2 0.8 1.4 K/W K/W K/W K/W K/W should be used only when no leads of other dissipating components run tn j.a