BYV36A DSK | Alldatasheet
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FEATURES
Case:JEDEC DO--15,molded plastic Terminals: Axial lead ,solderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Weight: 0.014 ounces,0.39 grams Mounting position: Any Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,50Hz,resistive or inductive load. For capacitive load,derate by 20%. BYV 36D BYV 36E UNITS Maximum recurrent peak reverse voltage V RRM 800 1000 V Max imum RMS v oltage V RMS 560 700 V Maximum DC blocking voltage V DC 800 1000 V Maximum average forw ard rectified current 9.5mm lead length, @T A =75 Peak forw ard surge current 10ms single half-sine-w ave superimposed on rated load @T J =125 Maximum instantaneous forw ard voltage @ 1.0A V F V Maximum reverse current @T A =25 at rated DC blocking voltage @T A =100 Maximum reverse recovery time (Note1) t rr ns Typical junction capacitance (Note2) C J pF Typical thermal resistance (Note3) R θJA Operating junction temperature range T J Storage temperature range T STG NOTE: 1. Measured with I F =0.5A, I R =1A, I rr =0.25A. 3. Thermal resistance f rom junction to ambient. 2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC. I F(AV) 150 -55 ---- + 150 -55 ---- + 150 A A 140 BYV 36A 600 A I FSM I R 100 5.0 100.0 1.35 1.45 30.0 FAST RECOVERY RECTIFIERS DO-15 200 VOLTAGE RANGE: 200 --- 1000 V CURRENT: 1.5-1.6 A BYV 36B BYV 36C 200 BYV36A(Z)---BYV36E(Z) Easily cleaned with Freon,Alcohol,Isopropanol and similar solvents 600 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 400 280 420 200 1.6 Dimensions in millimeters www.diode.kr Diode Semiconductor Korea
0.6 T J =25 Pulse Width=300 µ S 0.01 0.02 0.06 0.1 0.2 0.4 1.0 100 BYV36D BYV36E BYV36A BYV36C 1 100 T J =125 8.3ms Single Half Sine-Wave 0.25 0.50 0.75 1.00 1.25 25 50 125 175 75 150100 1.50 1.75 Single Phase Half Wave 60Hz Resistive or Inductive Load PULSE GENERATOR (NOTE2) D.U.T. N.1. N.1. OSCILLOSCOPE (NOTE 1) (+) 50VDC (APPROX) (-) N.1. (-) (+) -1.0A -0.25A +0.5A t rr 1cm AMPERES AMPERES AMPERES JUNCTION CAPACITANCE,pF AVERAGE FORWARD CURRENT FIG.3 --PEAK FORWARD SURGE CURRENT BYV36A(Z)---BYV36E(Z) SET TIME BASE FOR 50/100 ns /cm AMBIENT T EMPERAT URE, NUMBER OF CYCLES AT 60 Hz N OTE S:1.R ISE TIM E =7ns M AX. IN P U T IM P E D AN C E =1M .22pF FIG.1 -- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM FIG.2 --FORWARD DERATING CURVE INST ANT ANEOUS FORWARD VOLT AGE,VOLT S REVERSE VOLT AGE,VOLT S PEAK FORWARD SURGE CURRENT INSTANTANEOUS FORWARD CURRENT FIG.4--TYPICAL FORWARD CHARACTERISTIC FIG.4--TYPICAL JUNCTION CAPACITANCE 2.R ISE TIM E =10ns M AX. SOU R C E IM P E D AN C E =5O .1 .2 .4 1.0 2 4 10 20 40 100 100 T J =25 f=1MHz www.diode.kr Diode Semiconductor Korea