BYV32-200-XM

BYV3250XM SEME-LAB | Alldatasheet

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Technical content

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. BYV32–50–XM / XTM 4 BYV32–100–XM / XTM BYV32–150–XM / XTM BYV32–200–XM / XTM VRRM Peak Repetitive Reverse Voltage VRWM Working Peak Reverse Voltage VR Continuous Reverse Voltage IFRM Repetitive Peak Forward Current tp = 10/G6D s IF(AV) Average Forward Current T case = 70°C (switching operation, /G64 = 0.5, both diodes conducting) IFSM Surge Non Repetitive Forward Current tp = 10 ms Tstg Storage Temperature Range Tj Maximum Operating Junction Temperature 50V 100V 150V 200V 50V 100V 150V 200V 50V 100V 150V 200V 200A 20A 80A –65 to 200°C 200°C MECHANICAL DATA Dimensions in mm 16.38 16.89 13.39 13.64 10.41 10.92 12.70 19.05 2.54 BSC 10.41 10.67 3.56 3.81Dia. 0.70 0.90 2.65 2.75 0.89 1.14 4.70 5.00 1 2 3 10.613.70 2.54 BSC 10.6 0.8 4.6 1.0 2.70 BSC 123 HERMETICALLY SEALED DUAL FAST RECOVERY SILICON RECTIFIER FOR HI–REL APPLICATIONS  Reverse Connected version of BYV32 –xxx RM product  Tab TO–220M (Isolated) (XM) and Tabless (TXM) package options

FEATURES

 HERMETIC TO220 METAL PACKAGE  SCREENING OPTIONS AVAILABLE  ALL LEADS IOLATED FROM CASE  VOLTAGE RANGE 50 TO 200V  AVERAGE CURRENT 20A  VERY LOW REVERSE RECOVERY TIME – trr= 35ns  VERY LOW SWITCHING LOSSES TO –220XM ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) Prelim. 7/94 LAB SEME Pin 1 – Anode Pin 2 – Centre Tap Pin 3 – Cathode Cathode Anode Centre Tap Pin 1 – Anode Pin 2 – Centre Tap Pin 3 – Cathode TO –220TXM BYV32 –50M BYV32 –100M BYV32 –150M BYV32 –200M

Prelim. 7/94 LAB SEME Parameter Test Conditions Min. Typ. Max. Unit IR Reverse Current VF * Forward Voltage trr Reverse Recovery Time Q rr Recovered Charge VFP Forward Recovery Overvoltage VR = VRWM Tj= 25°C VR = VRWM Tj= 100°C IF = 8A T C = 25°C IF = 20A T C = 25°C IF = 5A T C = 100°C IF = 2A V R = 30V di / dt = 20A//G6D s IF = 1A V R = 30V di / dt = 50A//G6D s IF = 2A V R = 30V di / dt = 20A//G6D s di / dt = 50A//G6D sI F = 1A 0.6 1.1 1.5 0.95 1.0 /G6D A mA V ns ns nC V ELECTRICAL CHARACTERISTICS (Per Diode) (Tcase = 25°C unless otherwise stated) * Pulse Test: tp /GA3 300/G6D s, duty cycle /GA3 2%. R /G71 JC† Thermal Resistance Junction – Case 1.6 °C/W THERMAL CHARACTERISTICS † Both diodes conducting. BYV32 –50–XM / XTM4 BYV32 –100–XM / XTM BYV32 –150–XM / XTM BYV32 –200–XM / XTM Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.