BYV26A NJSEMI | Alldatasheet

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aucti, Dnc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 BYV26A, BYV26B, BYV26C, BYV26D, BYV26E Vishay Semiconductors Ultra-Fast Avalanche Sinterglass Diode

FEATURES

  • Glass passivated junction
  • Hermetically sealed package
  • Very low switching losses
  • Low reverse current
  • High reverse voltage MECHANICAL DATA Case: SOD-57 Terminals: plated axial leads, solderable per MIL-STD-750, method 2026 Polarity: color band denotes cathode end Mounting position: any Weight: approx. 369 mg

APPLICATIONS

  • Switched mode power supplies
  • High-frequency inverter circuits ORDERING INFORMATION (Example) DEVICE NAME BYV26E BYV26E ORDERING CODE BYV26E-TR BYV26E-TAP TAPED UNITS 5000 per 10" tape and reel 5000 per ammopack MINIMUM ORDER QUANTITY 25000 25000 PARTS TABLE PART BYV26A BYV26B BYV26C BYV26D BYV26E TYPE DIFFERENTIATION VR = 200 V; IF(AV) = 1 A VH = 400 V; IF(AV) = 1 A VR = 600 V; IF(AV) = 1 A VR = 800 V; IF(AV) = 1 A VR = 1000V;IF(AV)=1 A PACKAGE SOD-57 SOD-57 SOD-57 SOD-57 SOD-57 ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER Reverse voltage = repetitive peak reverse voltage Peak forward surge current Average forward current Non repetitive reverse avalanche energy Junction and storage temperature range TEST CONDITION See electrical characteristics tp = 10 ms, half sine wave I(BR)R = 1 A, inductive load PART BYV26A BYV26B BYV26C BYV26D BYV26E SYMBOL VR = VRRM VR = VRRM VR = VRRM VR = VRRM VR = VRRM IFSM IF(AV) ER Tj = Ts,g VALUE 200 400 600 800 1000 -'55to + 175 UNIT V V V V V A A mJ MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified) PARAMETER Junction ambient TEST CONDITION 1 = 10 mm, TL = constant SYMBOL RthJA VALUE UNIT K/W Quality Semi-Conductors

BYV26A, BYV26B, BYV26C, BYV26D, BYV26E Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Forward voltage Reverse current Reverse breakdown voltage Reverse recovery time TEST CONDITION IF = 1 A |F= 1 A, TJ = 175 °C VR = VRRM VR = VRRM, T, = 150°C IR= 100 UA IF = 0.5 A, IR = 1 A, iR = 0.25A PART BYV26A BW26B BYV26C BYV26D BYV26E BYV26A BYV26B BYV26C BYV26D BW26E SYMBOL VF VF IR IR V(BR)R V(BR)R V(BR)R V(BR)R V(BR)R trr trr trr trr trr MIN. 300 500 700 900 1100 TYP. MAX. 2.5 1.3 100 UNIT V V uA uA V V V V V ns ns ns ns ns TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) -^ 500 tu 200 40 80 120 160

959728 TJ - Junction Temperature (°C)

Fig. 1 - Max. Reverse Power Dissipation vs. Junction Temperature 0.8 0.4 .0.2 v X X jA=100f IhJA ,/wX = 45 KAN N 0 40 BO 120 160 200

959730 TamB - Ambient Temperature (°C)

Fig. 3 - Max. Average Forward Current vs. Ambient Temperature 1UUU i. 100 o ^ 1° tu z I 1 cc 0.1 9597?9 — VR = RRM J -*^ 0 40 80 120 160 2C T - Junction Temperature (°C) Fig. 2 - Max. Reverse Current vs. Junction Temperature 0.1 0.001 t = 25 °C - 01234567 959731 Vf. - Forward Voltage (V) Fig. 4 - Max. Reverse Current vs. Junction Temperature