BYP302

BYP302 SIEMENS | Alldatasheet

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Technical content

Semiconductor Group 1 12.96 BYP 302 FRED Diode

• Fast recovery epitaxial diode
• Soft recovery characteristics Type VRRM IFRMS trr Package Ordering Code BYP 302 1200V 40A 130ns TO-218 AD C67047-A2252-A2 Maximum Ratings Parameter Symbol Values Unit Mean forward current IFAV A RMS forward current IFRMS 40 Surge forward current, sine halfwave, aperiodic Tj = 100 °C, f = 50 Hz IFSM 115 Repetitive peak forward current Tj = 100 °C, tp ≤ 10 µs IFRM 260 i 2t value Tj = 100 °C, tp = 10 ms ∫i2dt A2s Repetitive peak reverse voltage VRRM 1200 V Surge peak reverse voltage VRSM 1200 Power dissipation TC = 90 °C Ptot W Chip or operating temperature Tj -40 ... + 150°C Storage temperature Tstg -40 ... + 150 Thermal resistance, chip case R thJC ≤ 0.8 K/W Thermal resistance, chip-ambient R thJA ≤ 46 DIN humidity category, DIN 40 040 - E - IEC climatic category, DIN IEC 68-1 - 40 / 150 / 56

Semiconductor Group 2 12.96 BYP 302 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Forward voltage drop IF = 15 A, Tj = 25 °C IF = 25 A, Tj = 25 °C IF = 15 A, Tj = 100 °C IF = 25 A, Tj = 100 °C VF 1.8 1.5 2.2 1.9 2.7 V Reverse current VR = 1200 V, Tj = 25 °C VR = 1200 V, Tj = 100 °C VR = 1200 V, Tj = 150 °C IR 0.15 0.05 0.01 0.25 mA AC Characteristics Reverse recovery charge IF = 25 A, VCC = 500 V, diF/dt = -1000 A/µs Tj = 100 °C Q rr - 4.5 - µC Peak reverse recovery current IF = 25 A, VCC = 500 V, diF/dt = -1000 A/µs Tj = 100 °C IRRM - 50 - A Reverse recovery time IF = 25 A, VCC = 500 V, diF/dt = -1000 A/µs Tj = 100 °C trr - 130 - ns Storage time IF = 25 A, VCC = 500 V, diF/dt = -1000 A/µs Tj = 100 °C tS - 65 - Softfaktor IF = 25 A, VCC = 500 V, diF/dt = -1000 A/µs Tj = 100 °C S - 1 -

Semiconductor Group 3 12.96 BYP 302 Typ. forward characteristics IF = f (VF) parameter: Tj 0 1 2 3 4 5 6 V 8 VF -1 10 0 10 1 10 2 10 A IF 25°C100°C 125°C =150°CjT Typ. reverse current IRRM = f (diF / dt) parameter: VCC = 500 V,IF = 25 A, Tj = 100 °C 10 1 10 2 10 3 A/us diF/dt A IRRM Typ. reverse recovery charge Q rr = f (diF / dt) parameter: VCC = 500 V,IF = 25 A, Tj = 100 °C 10 1 10 2 10 3 A/us diF/dt 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 uC 5.0 Q rr