BYP300 SIEMENS | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
Semiconductor Group 1 09.96 BYP 300 Preliminary data FRED Diode
- Fast recovery epitaxial diode
- Soft recovery characteristics Type VRRM IFRMS trr Package Ordering Code BYP 300 1200V 6.5A 55ns TO-218 AD C67047-A2250-A2 Maximum Ratings Parameter Symbol Values Unit Mean forward current IFAV A RMS forward current IFRMS 6.5 Surge forward current, sine halfwave, aperiodic Tj = 100 °C, f = 50 Hz IFSM Repetitive peak forward current Tj = 100 °C, tp ≤ 10 µs IFRM i 2t value Tj = 100 °C, tp = 10 ms ∫i2dt 1.1 A2s Repetitive peak reverse voltage VRRM 1200 V Surge peak reverse voltage VRSM 1200 Power dissipation TC = 90 °C Ptot W Chip or operating temperature Tj -40 ... + 150°C Storage temperature Tstg -40 ... + 150 Thermal resistance, chip case R thJC ≤ 3.8 K/W Thermal resistance, chip-ambient R thJA ≤ 46 DIN humidity category, DIN 40 040 - E - IEC climatic category, DIN IEC 68-1 - 40 / 150 / 56
Semiconductor Group 2 09.96 BYP 300 Preliminary data Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Forward voltage drop IF = 4 A, Tj = 25 °C IF = 4 A, Tj = 100 °C VF 2.3 V Reverse current VR = 1200 V, Tj = 25 °C VR = 1200 V, Tj = 100 °C VR = 1200 V, Tj = 150 °C IR 0.15 0.05 0.01 0.25 mA AC Characteristics Reverse recovery charge IF = 4 A, VCC = 300 V, diF/dt = -800 A/µs Tj = 100 °C Q rr - 0.8 - µC Peak reverse recovery current IF = 4 A, VCC = 300 V, diF/dt = -800 A/µs Tj = 100 °C IRRM - 22 - A Reverse recovery time IF = 4 A, VCC = 300 V, diF/dt = -800 A/µs Tj = 100 °C trr - 55 - ns Storage time IF = 4 A, VCC = 300 V, diF/dt = -800 A/µs Tj = 100 °C tS - 30 - Softfaktor IF = 4 A, VCC = 300 V, diF/dt = -800 A/µs Tj = 100 °C S - 0.8 -