BYP100 SIEMENS | Alldatasheet
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Semiconductor Group 1 09.96 BYP 100 Preliminary data FRED Diode
- Fast recovery epitaxial diode
- Soft recovery characteristics Type VRRM IFRMS trr Package Ordering Code BYP 100 1000V 8A 55ns TO-218 AD C67047-A2254-A2 Maximum Ratings Parameter Symbol Values Unit Mean forward current IFAV A RMS forward current IFRMS 8 Surge forward current, sine halfwave, aperiodic Tj = 100 °C, f = 50 Hz IFSM Repetitive peak forward current Tj = 100 °C, tp ≤ 10 µs IFRM i 2t value Tj = 100 °C, tp = 10 ms ∫i2dt A2s Repetitive peak reverse voltage VRRM 1000 V Surge peak reverse voltage VRSM 1000 Power dissipation TC = 90 °C Ptot W Chip or operating temperature Tj -40 ... + 150°C Storage temperature Tstg -40 ... + 150 Thermal resistance, chip case R thJC ≤ 9.8 K/W Thermal resistance, chip-ambient R thJA ≤ 46 DIN humidity category, DIN 40 040 - E - IEC climatic category, DIN IEC 68-1 - 40 / 150 / 56
Semiconductor Group 2 09.96 BYP 100 Preliminary data Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Forward voltage drop IF = 5 A, Tj = 25 °C IF = 5 A, Tj = 100 °C VF 1.7 2.45 V Reverse current VR = 1000 V, Tj = 25 °C VR = 1000 V, Tj = 100 °C VR = 1000 V, Tj = 150 °C IR 0.15 0.05 0.01 0.25 mA AC Characteristics Reverse recovery charge IF = 5 A, VCC = 300 V, diF/dt = -800 A/µs Tj = 100 °C Q rr - 0.8 1.5 µC Peak reverse recovery current IF = 5 A, VCC = 300 V, diF/dt = -800 A/µs Tj = 100 °C IRRM - 22 - A Reverse recovery time IF = 5 A, VCC = 300 V, diF/dt = -800 A/µs Tj = 100 °C trr - 55 85 ns Storage time IF = 5 A, VCC = 300 V, diF/dt = -800 A/µs Tj = 100 °C tS - 30 - Softfaktor IF = 5 A, VCC = 300 V, diF/dt = -800 A/µs Tj = 100 °C S - 0.8 -