BY614 NJSEMI | Alldatasheet
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Technical content
20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Miniature high-voltage soft-recovery rectifier BY614
FEATURES
- Glass passivated
- High maximum operating temperature
- Low leakage current
- Excellent stability
- Soft-recovery switching characteristics
- Very compact construction.
APPLICATIONS
- Miniature high-voltage assemblies such as voltage multipliers.
DESCRIPTION
Miniature glass package, using a high temperature alloyed construction. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. The package is designed to be used in an insulating medium such as resin, oil orSF6gas. The cathode lead is marked with a black band. Fig.1 Simplified outline (SOD61H2) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRSM VRRM VRW VR Ip(AV) IFRM IFSM Tstg Tj PARAMETER non-repetitive peak reverse voltage repetitive peak reverse voltage working reverse voltage continuous reverse voltage average forward current repetitive peak forward current non-repetitive peak forward current storage temperature junction temperature CONDITIONS averaged over any 20 ms period; PCB mounting (see Fig. 5); Tamb = 65 °C; see Fig. 2; see also Fig. 3 t< 10 ms; half sinewave; Tj = Tj max prior to surge; VR = VRWmax MIN. -65 -65 MAX. 2200 2200 2000 2000 500 +150 +150 UNIT V V V V mA mA A NJ Semi-Corjductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets nre current before placing orders. Quality Semi-Conductors
Miniature high-voltage soft-recovery rectifier BY614
ELECTRICAL CHARACTERISTICS
T: = 25 °C; unless otherwise specified. SYMBOL VF IR Qr tf trr cd PARAMETER forward voltage reverse current recovery charge fall time reverse recovery time diode capacitance CONDITIONS IF = 50 mA; Tj = Tj max; see Fig. 4 VR = VRwtnax; Tj = 120 °C when switched from IF = 100 mA to VR > 100 V and dlF/dt = -200 mA/us; see Fig. 6 when switched from IF = 100 mA to VR > 100 V and d!F/dt = -200 mA/us; see Fig. 6 when switched from IF = 100 mA to VR > 100 V and d!F/dt = -200 mA/us; see Fig. 6 VR = 0 V; f = 1 MHz MIN. 100 TYP. MAX. 300 UNIT V uA nC ns ns pF THERMAL CHARACTERISTICS SYMBOL Rth j-tp R(h j-a PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient CONDITIONS lead length = 10 mm note 1 VALUE 100 155 UNIT K/W K/W Note 1. Device mounted on epoxy-glass crinted-circuit board, 1.5 mm thick; thickness of copper >40 nm, see Fig.5.