BY527 NJSEMI | Alldatasheet
Document overview
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Technical content
<^>£mi~Conductoi ^Products., Dna. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Controlled avalanche rectifier BY527
FEATURES
- Glass passivated
- High maximum operating temperature
- Low leakage current
- Excellent stability
- Guaranteed avalanche energy absorption capability
- Available in ammo-pack.
DESCRIPTION
Rugged glass package, using a high temperature alloyed construction. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. -N- Fig.1 Simplified outline (SOD57) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VRWM VR Ip(AV) IFSM ERSM Tstg Tj PARAMETER repetitive peak reverse voltage crest working reverse voltage continuous reverse voltage average forward current non-repetitive peak forward current non-repetitive peak reverse avalanche energy storage temperature junction temperature CONDITIONS T,p = 45 °C; lead length = 10 mm; averaged over any 20 ms period; see Figs 2 and 4 Tamb = 80 °C; PCB mounting (see Fig 9); averaged over any 20 ms period; see Figs 3 and 4 t = 10 ms half sinewave L = 1 20 mH; Tj = Tj max prior to surge; inductive load switched off see Fig. 5 MIN. -65 -65 MAX. 1250 800 800 2.0 0.8 +175 +175 UNIT V V V A A A mJ NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors
Controlled avalanche rectifier BY527
ELECTRICAL CHARACTERISTICS
Tj = 25 °C; unless otherwise specified. SYMBOL VF V(BR)R IR trr cd PARAMETER forward voltage reverse avalanche breakdown voltage reverse current reverse recovery time diode capacitance CONDITIONS IF = 1 A; TJ = Tj max; see Fig. 6 IF = 1 A; see Fig. 6 IR = 0.1 mA VR = VRWMmax; see Fig. 7 VR = VRWMmaxI Tj = 165 °C; see Fig. 7 when switched from IF = 0.5 A to IR = 1 A; measured at IR = 0.25 A; see Fig. 10 VR = OV;f= 1 MHz; see Fig. 8 MIN. 1250 TYP. MAX. 0.8 1.0 150 UNIT V V V uA HA US PF THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient CONDITIONS lead length = 10 mm note 1 VALUE 100 UNIT K/W K/W