BY500-100Z DSK | Alldatasheet
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FEATURES
Case:JEDEC DO-27,molded plastic Terminals: Axial lead ,solderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Weight:0.041 ounces,1.15 grams Mounting position: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. BY500 -400 BY500 -600 BY500 -800 BY500 -1000 UNITS Maximum recurrent peak reverse voltage V RRM 400 600 800 1000 V Max imum RMS v oltage V RMS 280 420 560 700 V Max imum DC bloc king v oltage V DC 400 600 800 1000 V Maximum average forw ard rectified current 9.5mm lead length, @T A =75 P eak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @T J =125 Maximum instantaneous forw ard voltage @ 5.0 A V F V Maximum reverse current @T A =25 at rated DC blocking voltage @T A =100 Max imum r ev er s e r ec ov ery time ( Note1) t rr ns Typical junction capacitance (Note2) C J pF Typical thermal resistance (Note3) R θJA Operating junction temperature range T J Storage temperature range T STG NOTE: 1. Measured with I F =0.5A, I R =1A, I rr =0.25A. 200 -55---- + 150 DO - 27 100 100 BY500 -100 Easily cleaned with Freon,Alcohol,Isopropanol 200 140 A I FSM A 2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC. I R 200.0 1.3 1000.0 10.0 - 55---- + 150 3. Thermal resistance from junction to ambient. VOLTAGE RANGE: 100 --- 1000 V CURRENT: 5.0 A 200 BY500 -200 A5.0 FAST RECOVERY RECTIFIERS I F(AV) The plastic material carries U/L recognition 94V-0 Dimensions in millimeters www.diode.kr Diode Semiconductor Korea
Z Resi sti ve or I nduct i ve Load 1 0 075 1 2 5 1 7 51 5 0 0.1 0.2 0.4 T J =25 f=1M Hz 100 200 2042 10 100 40 0.1 0.4 100 T J =25 Pulse Width=300uS 1.8 2.0 PULSE GENERATOR (NOTE2) D.U.T. N.1. N.1. OSCILLOSCOPE (NOTE 1) (+) 50VDC (APPROX) (-) N.1. (-) (+) -1.0A -0.25A +0.5A t rr 1cm AMPERES AMPERES AMPERES JUNCTION CAPACITANCE,pF FIG.5-- TYPICAL JUNCTION CAPACITANCE 2.R ISE TIM E =10ns M AX. SOU R C E IM P E D AN C E =5O AVERAGE FORWARD CURRENT FIG.3 --PEAK FORWARD SURGE CURRENT N OTE S:1.R ISE TIM E =7ns M AX. IN P U T IM P E D AN C E =1M .22pF FIG.1 -- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM FIG.2 --FORWARD DERATING CURVE INSTANTANEOUS FORWARD VOLTAGE,VOLTS REVERSE VOLTAGE,VOLTS FIG.4--TYPICAL FORWARD CHARACTERISTIC PEAK FORWARD SURGE CURRENT INSTANTANEOUS FORWARD CURRENT SE T TIM E BASE FOR 50/100 ns /cm AMBIENT T EMPERAT URE, NUMBER OF CYCLES AT 60 Hz T J =125 8.3ms Single Half Sine-Wave 24 1 0 81 0040 60 80 125 175 100 150 200 www.diode.kr Diode Semiconductor Korea