BY296 HDSEMI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
Features
o 2.0A
- VRRM 100V-1000V
- High surge current capability
Applications
- Rectifier Marking Polarity: Color band denotes cathode BY29X X:From 6 to 9S DO-2 DO-27 Plastic-Encapsulate Diodes Fast Recovery Rectifier BY296 THRU BY299S Electrical Characteristics (Ta=25℃ Unless otherwise specified) BY Item Symbol Unit Conditions Repetitive Peak Reverse Voltage V RRM V Average Forward Current I F(AV) A 60Hz Half-sine wave, Resistance load, Ta=50℃ Surge(Non-repetitive)Forward Current I FSM A 60Hz Half-sine wave,1 cycle, Ta=25℃ Junction Temperature T J -55~+125 Storage Temperature T STG ℃ -55~+150 296 297 100 200 299 800 298 400 299S 1000 Item Symbol Unit Test Condition Peak Forward Voltage V FM V I FM =2.0A I RRM1 Ta=25℃ 5 Peak Reverse Current I RRM2 μA V RM RRM Ta=125℃ 50 Reverse Recovery time t rr ns I F =0.5A I R =1A I RR =0.25A R θJ-A Between junction and ambient 25 Thermal Resistance(Typical) R θJ-L /W℃ Between junction and lead 20 BY 296 297 299 298 299S 150 1.3 250 560 28014070 700 Maximum RMS V RMS V Vo ltage
H igh Diode Semiconductor IFSM(A) Number of Cycles FIG.2 MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 8.3ms Single Half Sine Wave JEDEC Method 1 2 10 20 100 IF(A) FIG.3: TYPICAL FORWARD CHARACTERISTICS TJ=25 Pulse width=300us 1% Duty Cycle 0.01 0.02 0.4 0.1 0.2 0.4 1.0 2.0 4.0 VF(V) 0 50 150 FIG.1: FORWARD CURRENT DERATING CURVE IO(A) Single Phase Half Wave 60Hz Resistive or Inductive Load 0.375''(9.5mm) Lead Length Ta( 100 0.5 1.0 1.5 2.0 FIG.4 TYPICAL REVERSE CHARACTERISTICS Voltage(%) IR(uA) Tj=25 Tj=125 Tj=100 0.01 0.1 0 20 40 60 80 100 1.0 100 1000 V R D R L I F IF I R I RR t t rr I FIG.5: Diagram of circuit and Testing wave form of reverse recovery time
H igh Diode Semiconductor Unit: in inches (millimeters) DO-2 1.0(25.4) MIN 1.0(25.4) MIN
H igh Diode Semiconductor Ammo Box Packaging Specifications For Axial Lead Rectifiers