BY278 PHILIPS | Alldatasheet

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Product specification 1996 Sep 26 DISCRETE SEMICONDUCTORS BY278 Damper diode handbook, 2 columns M3D118

1996 Sep 26 2

Philips Semiconductors Product specification Damper diode BY278

FEATURES

  • Glass passivated
  • High maximum operating temperature
  • Low leakage current
  • Excellent stability
  • Available in ammo-pack
  • Also available with preformed leads for easy insertion.

APPLICATIONS

  • Damper diode in high frequency horizontal deflection circuits up to 16 kHz.

DESCRIPTION

Rugged glass package, using a high temperature alloyed construction. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. Fig.1 Simplified outline (SOD64) and symbol. 2/3 page (Datasheet) MAM104 ka /,/#02/,/#02 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).

ELECTRICAL CHARACTERISTICS

Tj=2 5°C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRSM non-repetitive peak reverse voltage − 1700 V VRRM repetitive peak reverse voltage − 1700 V VR continuous reverse voltage − 1650 V IFWM working peak forward current T amb =7 5°C; PCB mounting (see Fig.4); see Fig.2 − 5A IFRM repetitive peak forward current − 10 A IFSM non-repetitive peak forward current t = 10 ms half sinewave; Tj=T j max prior to surge; VR =V RRMmax − 50 A Tstg storage temperature −65 +175 °C Tj junction temperature −65 +150 °C SYMBOL PARAMETER CONDITIONS MAX. UNIT VF forward voltage I F = 5 A; Tj=T j max; see Fig.3 1.4 V IF = 5 A; see Fig.3 1.5 V IR reverse current V R =V Rmax ; Tj= 150°C 150 µA trr reverse recovery time when switched from I F = 0.5 A to IR =1A ; measured at IR = 0.25 A; see Fig.6 1 µs tfr forward recovery time when switched to I F = 5 A in 50 ns; Tj=T j max; Fig.7 1 µs

1996 Sep 26 3

Philips Semiconductors Product specification Damper diode BY278 THERMAL CHARACTERISTICS Note 1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer≥40 µm, see Fig.4. For more information please refer to the“General Part of associated Handbook”. SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-tp thermal resistance from junction to tie-point lead length = 10 mm 25 K/W R th j-a thermal resistance from junction to ambient note 1 75 K/W mounted as shown in Fig.5 40 K/W

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Philips Semiconductors Product specification Damper diode BY278 GRAPHICAL DATA Fig.2 Maximum total power dissipation as a function of working peak forward current. Solid line: basic high-voltage E/W modulator circuit; see Fig.8. Dotted line: basic conventional horizontal deflection circuit; see Fig.9. Curves include power dissipation due to switching losses. handbook, halfpage 05 4321 MBH407 0.75 0.25 0.50 1.25 1.00 IFWM (A) Ptot (W) Fig.3 Forward current as a function of forward voltage; maximum values. Dotted line: Tj= 150°C. Solid line: Tj=2 5°C. handbook, halfpage 02 1 MBH408 VF (V) IF (A) Fig.4 Device mounted on a printed-circuit board. Dimensions in mm. handbook, halfpage MGA200 Fig.5 Mounting with additional printed-circuit board for heat sink purposes. Dimensions in mm. handbook, halfpage 35 MGA204 25.4 3 cm2 copper 3 cm2 copper

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Philips Semiconductors Product specification Damper diode BY278 Fig.6 Test circuit and reverse recovery time waveform and definition. Input impedance oscilloscope: 1 MΩ , 22 pF; tr ≤ 7 ns. Source impedance: 50Ω ; tr ≤ 15 ns. handbook, full pagewidth 10 Ω 1 Ω 50 Ω 25 V DUT MAM057 trr 0.5 0.5 1.0 IF (A) IR (A) t 0.25 Fig.7 Forward recovery time definition. handbook, halfpage t tfr 10% IF t 90% 100% V F MGD600

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Philips Semiconductors Product specification Damper diode BY278

APPLICATION INFORMATION

For horizontal deflection circuits, two basic applications are shown in Figs 8 and 9. The maximum allowable total power dissipation for the diode can be calculated from the thermal resistance R th j-a and the difference between Tj max and Tamb max in the application. The maximum IFWM can then be taken from Fig.2. The basic application waveforms in Fig.10 relate to the circuit in Fig.8. In the circuit in Fig.9 the forward conduction time of the diode is shorter, allowing a higher IFWM (see Fig.2). Fig.8 Application in basic high-voltage E/W modulator circuit. D1 = BY278. handbook, halfpage MBE935 LYD1 + (E-W) horizontal deflection transistor Fig.9 Application in basic horizontal deflection circuit. D1 = BY278. handbook, halfpage C f C s LYD1 MBE934 horizontal deflection transistor Fig.10 Basic application waveforms. handbook, full pagewidth T IF VR tp IFRM VRRM IFWM time time MCD430 - 1

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Philips Semiconductors Product specification Damper diode BY278 PACKAGE OUTLINE DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Where application information is given, it is advisory and does not form part of the specification. Fig.11 SOD64. Dimensions in mm. The marking band indicates the cathode. handbook, full pagewidth MBC049 /#02 /#02 4.5 max ka 28 min28 min 5.0 max 1.35 max