BY251 DSK | Alldatasheet
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Technical content
FEATURES
Case:JEDEC DO-27,molded plastic Terminals: Axial lead ,solderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Weight: 0.041 ounces, 1.15 grams Mounting position: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. BY 253 BY 254 BY 255 UNITS Maximum recurrent peak reverse voltage V RRM 600 800 1300 V Max imum RMS v oltage V RMS 420 560 910 V Maximum DC blocking voltage V DC 600 800 1300 V Maximum average forw ard rectified current 9.5mm lead length, @T A =75 P eak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @T J =125 Maximum instantaneous forw ard voltage @ 3.0 A V F V Maximum reverse current @T A =25 at rated DC blocking voltage @T A =100 Typical junction capacitance (Note1) C J p F Typical thermal resistance (Note2) R θJA Operating junction temperature range T J Storage temperature range T STG BY 251 BY 252 200 400 1.1 2. Thermal resistance f rom junction to ambient. A BY251(Z) - - - BY255(Z) A 10.0 and similar solvents I F(AV) 3.0 PLASTIC SILICON RECTIFIERS The plastic material carries U/L recognition 94V-0 A 100.0 100.0 I FSM NOTE: 1. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC. - 55 ---- + 150 - 55 ---- + 150 I R 400 280 VOLTAGE RANGE: 200 --- 1300 V CURRENT: 3.0 A 140 200 Diffused junction Easily cleaned witn Freon,Alcohol,lsopropanol DO - 27 Dimensions in millimeters Diode Semiconductor Korea www.diode.kr
1 2 4 1 08 20 40 60 80 100 T J =125℃ 8.3ms Single Half Sine-Wave 100 .4 1.0 2 100 41 0 2 0 40 10 0 f=1MHz T J =25 T J =25 Pulse Width=300uS 100 1.0 0.4 0.2 0.1 0.06 0.04 0.02 0.01 Single Phase Half Wave 60H Z Resistive or Inductive Load 75 100 150 125 AMPERES AMPERES AMPERES JUNCTION CAPACITANCE,pF NUMBER OF CYCLES AT 60Hz SURGE CURRENT AVERAGE FORWARD CURRENT PEAK FORWARD SURGE CURRENT INSTANTANEOUS FORWARD CURRENT, FIG.3 -- MAXIMUM NON-REPETITIVE FORWARD FIG.4 -- TYPICAL JUNCTION CAPACITANCE REVERSE VOLT AGE, VOLT S BY251(Z)- - -BY255(Z) FORWARD VOLTAGE, VOLT S AMBIENT T EMPERAT URE, FIG.1 -- TYPICAL FORWARD CHARACTERISTICS FIG.2 -- TYPICAL CURRENT DERATING CURVE www.diode.kr Diode Semiconductor Korea
.01 0.1 1.0 400 20 60 80 100 120 140 T J =125 C T J =125 C BY251(Z) - - - BY255(Z) FIG.5 -- TYPICAL REVERSE CHARACTERISTICS REVERSE LEAKAGE CURRENT, MICRO AMPERES PERCENT OF RATED PEAK REVERASE VOLTAGE, % www.diode.kr Diode Semiconductor Korea