BXL4004 SANYO | Alldatasheet

Document overview

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Technical content

Features

  • ON-resistance R DS(on)1=3mΩ (typ.) • Input capacitance Ciss=8200pF (typ.)
  • 4.5V drive Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSS 40 V Gate-to-Source Voltage V GSS ±20 V Drain Current (DC) I D 100 A Drain Current (Pulse) I DP PW≤10μs, duty cycle≤1% 400 A Allowable Power Dissipation P D 1.75 W Tc=25°C 75 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Avalanche Energy (Single Pulse) *1 E AS 420 mJ Avalanche Current *2 I AV 60 A Note : *1 VDD=24V , L=100μH, IAV=60A (Fig.1) *2 L≤100μH, Single pulse Package Dimensions unit : mm (typ) 7536-001

82912 TKIM TC-00002738/41112QA TKIM TC-00002736

http://www.sanyosemi.com/en/network/ Product & Package Information

  • Package : TO-220-3L
  • JEITA, JEDEC : SC-46, TO-220AB
  • Minimum Packing Quantity : 50 pcs./magazine Marking Electrical Connection XL4004 LOT No. BXL4004 N-Channel Silicon MOSFET General-Purpose Switching Device

Applications

1 : Gate 2 : Drain 3 : Source SANYO : TO-220-3L 10.0 (0.6) (1.7) 1.27 1.52 0.8 2.542.54 13.08 15.7 2.8 13.3 2.4 9.23.0 1.3 4.5 1.3

8.9 MAX

0.5 1 23 3.6 BXL4004-1E

No.9050-2/7 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Drain-to-Source Breakdown Voltage V (BR)DSS ID=1mA, VGS=0V 40 V Zero-Gate Voltage Drain Current I DSS V DS=40V, VGS=0V 10 μA Gate-to-Source Leakage Current I GSS VGS=±16V, VDS=0V ±10 μA Cutoff Voltage V GS(off) V DS=10V, ID=1mA 1.2 2.6 V Forward Transfer Admittance | yfs | VDS=10V, ID=50A 120 S Static Drain-to-Source On-State Resistance RDS(on)1 I D=50A, VGS=10V 3 3.9 mΩ RDS(on)2 I D=50A, VGS=4.5V 4.7 6.6 mΩ Input Capacitance Ciss VDS=20V, f=1MHz 8200 pF Output Capacitance Coss 940 pF Reverse Transfer Capacitance Crss 700 pF Turn-ON Delay Time td(on) See Fig.2 65 ns Rise Time tr 390 ns Turn-OFF Delay Time td(off) 510 ns Fall Time tf 360 ns Total Gate Charge Qg VDS=24V, VGS=10V, ID=100A 140 nC Gate-to-Source Charge Qgs 43 nC Gate-to-Drain “Miller” Charge Qgd 25 nC Diode Forward Voltage VSD IS=100A, VGS=0V 1.0 1.2 V Reverse Recovery Time trr See Fig.3 IS=100A, VGS=0V, di/dt=100A/μs 90 ns Reverse Recovery Charge Qrr 230 nC Fig.1 Unclamped Inductive Switching Test Circuit Fig.2 Switching Time Test Circuit Fig.3 Reverse Recovery Time Test Circuit

Ordering Information

Device Package Shipping memo BXL4004-1E TO-220-3L 50pcs./magazine Pb Free and Halogen Free 50Ω10V ≥50Ω VDD L BXL4004 PW=10μs D.C.≤1% P. G 50Ω G S D ID=50A RL=0.48Ω VDD=24V VOUT BXL4004 VIN 10V VIN Driver MOSFET VDD BXL4004 LG S D

No.9050-3/7 Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V Drain Current, ID -- A Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Case Temperature, Tc -- °C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Drain Current, ID -- A Diode Forward V oltage, VSD -- V Source Current, IS -- A Gate-to-Source V oltage, VGS -- V ID -- VDS ID -- VGS RDS(on) -- TcRDS(on) -- VGS IS -- VSD| yfs | -- ID Forward Transfer Admittance, | yfs | -- S Drain Current, ID -- A Switching Time, SW Time -- ns SW Time -- ID Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- pF Ciss, Coss, Crss -- VDS IT16817 IT16818 IT16819 IT16820 --50 --25 0 25 50 75 100 125 150 200 180 120 160 100 140 200 180 120 160 100 140 10V 6V Tc=25°C VDS=10V VGS=3.5V IT16822 0.01 0.1 100 1000 1.0 IT16821 --25 Tc=75 0.1 1.0 23 5 7 23 5 7 7 10 100 23 5 100 1000 1.0 VDS=10V Tc= --25 75°C VGS=0V Single pulse Tc= --25 --25 Tc=75 2301 4 861 059 7 234 6 57 ID=50A Single pulse Tc=75°C 25°C --25°C VGS=10V , I D=50A VGS=4.5V , I D=50A 25°C 4.5V Single pulse IT16823 100 1000 0.1 1.0 100 102 3 57 2 3 57 2 3 57 VDD=24V VGS=10V td(off) tr tf td(on) 10000 100 1000 100000 1053 0 2015 25 IT16824 f=1MHz Ciss Coss Crss

No.9050-4/7 Total Gate Charge, Qg -- nC Gate-to-Source V oltage, VGS -- V VGS -- Qg EAS -- Ta Avalanche Energy derating factor -- % Ambient Temperature, Ta -- °C PD -- Ta A S O Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Ambient Temperature, Ta -- °C Allowable Power Dissipation, PD -- W IT16826 4020 60 80 100 120 140 100 120 160 IT16829 IT16828 IT16825 VDS=24V ID=100A 0 20 40 60 80 100 120 140 20 40 60 80 100 140 120 0.5 1.0 1.5 1.75 2.5 2.0 160 0.1 1.0 0.1 10μs 100ms 10ms 1ms DC operation 1.0 10 100 723 5723 5723 5 100 1000 Tc=25°C Single pulse Operation in this area is limited by RDS(on). IDP=400A(PW≤10μs) ID=100A 100 μs PD -- Tc Allowable Power Dissipation, PD -- W Case Temperature, Tc -- °C IT16827 20 40 60 80 100 120 140 160

No.9050-5/7 Magazine Specifi cation BXL4004-1E

No.9050-6/7 Outline Drawing BXL4004-1E Mass (g) Unit 2.0 * For reference mm

PS No.9050-7/7 This catalog provides information as of August, 2012. Specifi cations and information herein are subject to change without notice. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer 's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer 's products or equipment. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a confirmation. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. Note on usage : Since the BXL4004 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects.