BXL4001

BXL4001 SANYO | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 5

Technical content

Features

• Low ON-resistance.
• Motor drive.
• Avalanche resistance guarantee.
• 10V drive. Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSS 75 V Gate-to-Source Voltage V GSS ±20 V Drain Current (DC) I D 85 A Drain Current (Pulse) I DP PW≤10μs, duty cycle≤1% 340 A Allowable Power Dissipation P D 1.75 W Tc=25°C7 5 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Avalanche Energy (Single Pulse) *1 E AS 211 mJ Avalanche Current *2 I AV 51 A Note : *1 VDD=30V , L=100μH, IAV=51A *2 L≤100μH, Single pulse Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Drain-to-Source Breakdown Voltage V (BR)DSS ID=1mA, VGS=0V 75 V Zero-Gate Voltage Drain Current I DSS V DS=75V, VGS=0V 1 μA Gate-to-Source Leakage Current I GSS VGS=±16V, VDS=0V ±10 μA Marking : XL4001 Continued on next page. 42209QA MS IM TC-00001940 SANYO Semiconductors DATA SHEET BXL4001 N-Channel Silicon MOSFET General-Purpose Switching Device

Applications

www.semiconductor-sanyo.com/network

No. A1459-2/5 Continued from preceding page. Parameter Symbol Conditions Ratings Unit min typ max Cutoff Voltage V GS(off) V DS=10V, ID=1mA 2 4 V Forward Transfer Admittance | yfs | VDS=10V, ID=43A 75 S Static Drain-to-Source On-State Resistance RDS(on) I D=43A, VGS=10V 9.0 12.4 m Ω Input Capacitance Ciss V DS=20V, f=1MHz 6700 pF Output Capacitance Coss V DS=20V, f=1MHz 590 pF Reverse Transfer Capacitance Crss V DS=20V, f=1MHz 440 pF Turn-ON Delay Time td(on) See speci fi ed Test Circuit. 75 ns Rise Time tr See speci fi ed Test Circuit. 340 ns Turn-OFF Delay Time td(off) See speci fi ed Test Circuit. 260 ns Fall Time tf See specifi ed Test Circuit. 170 ns Total Gate Charge Qg V DS=30V, VGS=10V, ID=85A 115 nC Gate-to-Source Charge Qgs V DS=30V, VGS=10V, ID=85A 37 nC Gate-to-Drain “Miller” Charge Qgd V DS=30V, VGS=10V, ID=85A 30 nC Diode Forward Voltage VSD IS=85A, VGS=0V 1.0 1.5 V Package Dimensions unit : mm (typ) 7530-001 Switching Time Test Circuit Avalanche Resistance Test Circuit PW=10μs D.C.≤1% P. G 50Ω G S D ID=43A RL=0.7Ω VDD=30V VOUT BXL4001 VIN 10V VIN 50Ω10V ≥50Ω VDD L BXL4001 1 : Gate 2 : Drain 3 : Source SANYO : TO-220(LS) 123 0.8 0.4 2.55 2.55 2.55 2.55 10.2 1.2 4.5 15.114.0 2.7 2.7 (1.6) 14.0 3.6 6.3 1.3

No. A1459-3/5 | yfs | -- ID RDS(on) -- VGS RDS(on) -- Tc ID -- VDS ID -- VGS(off) IS -- VSD SW Time -- ID Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Cutoff V oltage, VGS(off) -- V Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V Case Temperature, Tc -- °C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Drain Current, ID -- A Drain Current, ID -- A Switching Time, SW Time -- ns Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- pF Diode Forward V oltage, VSD -- V Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S Ciss, Coss, Crss -- VDS IT14628 IT14625 --50 --25 150 03 0 10 15 20 255 1000 IT14632 IT14630 IS -- VSD IT14629 0.1 1.0 23 5 7 23 5 7 2 2 35 7 100 0.001 0.01 0.1 1.0 100 1.0 10000 10 100 0.1 1.02 3 57 2 3 57 2 2 35 710 100 0 25 50 75 100 125 100 Tc= --25 --25 °CTc=75 Tc= --25 25°C 75°C VDS=10V Tc=75 --25 Ciss Crss IT14631 100 1000 td(off) VDD=30V VGS=10V f=1MHz tr 160 170 140 100 120 150 130 110 160 170 140 100 120 150 130 110 12 5 438 760 IT14627 468 1 0 579 IT14626 Tc=25°C VGS=5V VDS=10V tf VGS=10V , I D=43A Coss td(on) 10V --25°C 25°C Tc=75°C Single pulseID=43A Single pulse VGS=0V Single pulse

No. A1459-4/5 VGS -- Qg Total Gate Charge, Qg -- nC Gate-to-Source V oltage, VGS -- V IT14637 PD -- TcPD -- Ta A S O 25 50 75 100 125 150 100 120 175 EAS -- Ta Drain-to-Source V oltage, VDS -- V Drain Current, ID -- AAllowable Power Dissipation, PD -- W Allowable Power Dissipation, PD -- WAvalanche Energy derating factor -- % Case Temperature, Tc -- °C Ambient Temperature, Ta -- °C Ambient Temperature, Ta -- °C IT14634IT14633 0 20 40 60 120 80 100 VDS=30V ID=85A IT14635 0.1 1.0 0.1 IDP=340A ID=85A 100 μs 1ms 10ms100ms DC operation Operation in this area is limited by RDS(on). 1.0 10 223 5 7 23 5 7 23 5 7 100 10μs 100 20 40 60 80 100 140 120 160 IT14636 20 40 60 80 100 140 120 1.5 1.75 1.0 0.5 2.5 2.0 160 PW≤10μs Tc=25°C Single pulse

No. A1459-5/5 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. PS This catalog provides information as of April, 2009. Specifi cations and information herein are subject to change without notice. Note on usage : Since the BXL4001 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects.