BTX18-200

BTX18-100 NJSEMI | Alldatasheet

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20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 BTX18-100/BTX18-200/BTX18-300 BTX18-400/BTX18-500 Anode to Cathode - Ratings Voltage 1) Currents SILICON THYRISTORS Symbol VR VRWM VRRM VRSM VDWM VD VDRM VDSM Ratings Continuous Reverse Voltage Crest Working Reverse Voltage Repetitive Peak Reverse Voltage Non-repetitive peak reverse voltage (t<10ms) Crest Working off-state Voltage Continuous off-state Voltage Repetitive peak off-state voltage Non-repetitive peak off-state voltage (t<10ms) BTX18- 100 100 100 120 120 100 100 120 120 BTX18- 200 200 200 240 240 200 200 240 240 BTX18- 300 300 300 350 350 300 300 350 350 BTX18- 400 400 400 500 500 400 400 500 500 BTX18- 500 500 500 600 600 500 500 600 600 V V V V V V v2) V2) Symbol Ij(AV) IT IT(RMS) Ratings Average on-state current (averaged over any 20 ms period) On-state Current (D.C.) TCASE=100°C RMS on-state Current TCASE=105°C TAMB=60°C, in free air BTX18- BTX18- BTX18- BTX18- 100 200 300 400 Max: 1.0 Max : 250 Max : 1 .6 Max : 1 .6 BTX18- 500 A mA A A «SP». NJ .Semi-CondiwtORi reserves the righl lo change test condition*, parameter limits ;uid package dimensions without notice Information liimidwd by NJ S<mr-CunJu«tors it believed tu he holh acuirale and retiunl* iM the tinw of guing to pres*. However Semi-I ondiKkirs .UMIIIKS no responsibility for ;my ermrs i>r omissions Jiso)V«red in its use NJ Senii-CoiidiMurs cncourasies

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Repetitive Peak on-state Current Non-repetitive peak on-state current t=10ms ; Tj=125°C prior to surge Junction Temperature Storage Temperature BTX18- BTX18- 100 200 BTX18- 300 BTX18- 400 BTX18- 500 Max: 10 10A Max : 125°C -55to+125°C A V 1) These ratings apply for zero or negative bias on the gate with respect to the cathode, and when a resistor R<1 kii is connected between gate and cathode 2) The device is not suitable for operation in the forward breakover mode. Gate to Cathode - Ratings With 1£1 resistor between gate and cathode Symbol VFGM VRGM IFGM PG<AV> PGM Ratings Forward Peak Voltage Reverse Peak Voltage Forward Peak Current Average Power Dissipation (averaged over any 20 ms period) Peak Power Dissipation BTX18 BTX18 -100 -200 BTX18 -300 Max : 10 BTX18 -400 V BTX18 -500 Max : 5 V Max : 0.2 Max : 0.05 Max : 0.5 V V A W W Temperatures Symbol R«i j-c Rth J-a Zthj-c Ratings From Junction to Case From Junction to Ambient Transient Thermal Resistance (t=10 ms) BTX18 BTX18 BTX18 -100 -200 -300 BTX18 -400 BTX18 -500 200 2.5 °c/w °c/w °c/w Anode to Cathode - Characteristics Symbol VT Ratings On State Voltage ! IT=1 .0 A, Ti=25°C I BTX18 -100 1.5 BTX18 -200 1.5 BTX18 -300 1.5 BTX18 -400 1.5 BTX18 -500 1.5 v1)

'DM IL IH Ratings Peak Reverse Current < VRM=VRWmax i Tj=125°C I Peak off-state Current j VDM=Vowmax i Tj=125°C I Latching current, Tj=125°C Holding Current ; T,=25°C j < BTX18 -100 800 800 BTX18 -200 400 400 BTX18 -300 275 275 BTX18 -400 200 200 BTX18 -500 160 160 Typ: 10 5.0 2) HA HA mA mA Gate to Cathode - Characteristics Symbol VGT VGD IGT Ratings Voltage that will trigger all devices Tj=25°C Voltage that will not trigger any device Ti=125°C Current that vill trigger all devices I Ti=25°C | BTX18 BTX18 BTX18 -100 -200 -300 BTX18 -400 BTX18 -500 2.0 200 5.0 V mV mA Switching Characteristics Symbol Ratings I i Turn off time when switched from Tr25 C i IT=300 mA to IR=1 75 mA i™ "'""'""" ' 1 ^ |Ti=125C | I DM Peak off-state Current < VDM=VDWITOX ; Tj=125°C BTX18 -100 BTX18 -200 BTX18 -300 BTX18 -400 BTX18 -500 Type : 20 Typ : 35 800 400 275 200 160 |1S US 1) VTis measured along the leads at 1 cm from the case 2) Measurer under the following conditiond : Anode sypply voltage= +6.0V Initial on-state current after gate triggering= 50mA The current is reduced until the device turns of.