BTS941 SIEMENS | Alldatasheet

Document overview

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Technical content

Features

  • Logic Level Input
  • Input Protection (ESD)
  • Thermal Shutdown
  • Overload protection
  • Short circuit protection
  • Overvoltage protection
  • Current limitation
  • Maximum current adjustable with external resistor
  • Current sense
  • Status feedback with external input resistor
  • Analog driving possible Product Summary Drain source voltage V60VDS On-state resistance RDS (on) 28 m W ACurrent limit ID(lim) 6 Nominal load current AID (ISO) 12 Clamping energy mJEAS 4000 Application
  • All kinds of resistive, inductive and capacitive loads in switching or linear applications
  • µC compatible power switch for 12 V and 24 V DC applications
  • Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET in Smart SIPMOSÒ chip on chip tech- nology. Fully protected by embedded protected functions. protection Overvoltage Drain IN ESD HITFET â Source Current1 Over- protection temperature Short circuit protection dv/dt limitation limitation V bb Short circuit protection LOAD 4 CC NC RCC Overload protection M

14.07.1998Semiconductor Group Page 2 BTS 941 Maximum Ratings at Tj = 25 °C unless otherwise specified Parameter Symbol UnitValue Drain source voltage VDS 60 V Drain source voltage for short circuit protection RCC = 0 W without R CC VDS(SC) Continuous input current 1) -0.2V £ VIN £ 10V VIN < -0.2V or VIN > 10V IIN no limit | IIN | £ 2 mA Operating temperature Tj °C- 40 ... +150 Storage temperature Tstg - 55 ... +150 Power dissipation TC = 25 °C

149 WPtot

Unclamped single pulse inductive energy ID(ISO) = 12 A 4000 mJEAS Electrostatic discharge voltage (Human Body Model) according to MIL STD 883D, method 3015.7 and EOS/ESD assn. standard S5.1 - 1993 VESD 3000 V Load dump protection VLoadDump 2) = VA + VS VIN=low or high; VA =13.5 V td = 400 ms, RI = 2 W , ID =0,5*12A td = 400 ms, RI = 2 W , ID = 12A 100 VLD DIN humidity category, DIN 40 040 E IEC climatic category; DIN IEC 68-1 40/150/56 Thermal resistance junction - case: R thJC 0.84 K/W 75R thJAjunction - ambient: SMD version, device on PCB: 3) R thJA 45 1A sensor holding current of 500 µA has to be guaranted in the case of thermal shutdown (see also page 3) 2VLoaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 3Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for Drain connection. PCB is vertical without blown air.

14.07.1998Semiconductor Group Page 3 BTS 941

Electrical Characteristics

Parameter Symbol UnitValues max.typ.min.at Tj=25°C, unless otherwise specified Characteristics -Drain source clamp voltage

73 VVDS(AZ) 60

-IDSS -Off state drain current VDS = 32 V, Tj = -40...+150 °C, VIN = 0 V 20 µA 1.7 2.2VIN(th) 1.3Input threshold voltage ID = 2,7 mA V 35 100 µAIIN(1) -Input current - normal operation, ID <ID(lim): VIN = 10 V 270Input current - current limitation mode, ID =ID(lim): VIN = 10 V 500IIN(2) - 2500IIN(3) 1000Input current - after thermal shutdown, ID =0 A: VIN = 10 V 4000 IIN(H) 500 300 Input holding current after thermal shutdown Tj = 25 °C Tj = 150 °C m WR DS(on) On-state resistance ID = 12 A, VIN = 5 V, Tj = 25 °C ID = 12 A, VIN = 5 V, Tj = 150 °C On-state resistance ID = 12 , VIN = 10 V, Tj = 25 °C ID = 12 , VIN = 10 , Tj = 150 m WR DS(on) ID(ISO) 12Nominal load current (ISO 10483) VIN = 10 V, VDS = 0.5 V, TC = 85 °C A

14.07.1998Semiconductor Group Page 4 BTS 941 Parameter Symbol Values Unit at Tj=25°C, unless otherwise specified min. typ. max. Characteristics Initial peak short circuit current limit VIN = 10 V, VDS = 12 V ID(SCp) - 160 - A Current limit 1) VIN = 10 V, VDS = 12 V, tm = 350 µs, Tj = -40...+150 °C, without R CC VIN = 10 V, VDS = 12 V, tm = 350 µs, ID(lim) 100 130 170 Dynamic Characteristics µstonTurn-on time VIN to 90% ID : RL = 2,2 W , VIN = 0 to 10 V, Vbb = 12 V 40 100- Turn-off time VIN to 10% ID : RL = 2,2 W , VIN = 10 to 0 V, Vbb = 12 V -toff 70 170 V/µsSlew rate on 70 to 50% Vbb: RL = 2,2 W , VIN = 0 to 10 V, Vbb = 12 V -dVDS/dton 31- Slew rate off 50 to 70% Vbb: RL = 2,2 W , VIN = 10 to 0 V, Vbb = 12 V 1 3dVDS/dtoff - Protection Functions Tjt °CThermal overload trip temperature 165 -150 EASUnclamped single pulse inductive energy ID = 12 A, Tj = 25 °C, Vbb = 32 V ID = 12 A, Tj = 150 °C, Vbb = 32 V 4000 900 mJ Inverse Diode VSDInverse diode forward voltage IF = 5*12A, tm = 300 ms, VIN = 0 V 1.13 -- V 1Device switched on into existing short circuit (see diagram Determination of ID(lim). Dependant on the application, these values might be exceeded for max. 50 µs in case of short circuit occurs while the device is on condition

14.07.1998Semiconductor Group Page 5 BTS 941 Block Diagramm Terms Inductive and overvoltage output clamp HITFET IN CC D V IN ID VDS1 IIN 3 S Vbb RCC RL CCV HITFET VZ D S Short circuit behaviourThe ground lead impedance of R CC should be as low as possible V IN ID ID(SCp) t 0 tm t 2 ID(Lim) t 1 Input circuit (ESD protection) IN ESD-ZD I Source ESD zener diodes are not designed for DC current > 2 mA @ VIN>10V. t0: Turn on into a short circuit tm : Measurementpoint for ID(lim) t1: Activation of the fast temperature sensor and regulation of the drain current to a level wher the junction temperature remains constant. t2: Thermal shutdown caused by the second temperature sensor, achieved by an integrating measurement.

14.07.1998Semiconductor Group Page 6 BTS 941 On-state resistance RON = f(Tj); ID =12A; VIN=10V -50 -25 0 25 50 75 100 °C 150 Operating W RDS(on) typ. max. Maximum allowable power dissipation Ptot = f(Tc) 0 20 40 60 80 100 120 °C 150 150 100 110 120 W 140 BTS 941 Ptot On-state resistance R ON = f(Tj); ID = 12A; VIN=5V -50 -25 0 25 50 75 100 °C 150 Tj W RDS(on) typ. max. Typ. input threshold voltage VIN(th) = f(Tj); ID =2,7A; VDS =12V -50 -25 0 25 50 75 100 °C 150 Tj 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 V 2.0 VIN(th)

14.07.1998Semiconductor Group Page 7 BTS 941 Typ. transfer characteristics ID = f(VIN); VDS =12V; Tj=25°C 0 2 4 6 V 10 VIN 100 A 140 ID Typ. short circuit current IDlim = f(Tj); RCC =0W , VDS =12V Parameter: VIN -50 -25 0 25 50 75 100 °C 150 Tj 100 A 150 ID 10V Typ. output characteristic ID = f(VDS ); Tj=25°C Parameter: VIN 0 2 4 V 8 VDS A 100 ID Vin=3V 10V Safe Operating Area ID(SC) = f(VDS ); Tj=25°C 0 10 20 30 V 50 VDS 100 120 140 A 180 ID

14.07.1998Semiconductor Group Page 8 BTS 941 Typ. current limit versus RCC ID(lim) = f(RCC ); Tj=25°C Parameter: VIN W RDS(on) 100 A 140 ID 10V Typ. current sense characteristics VCC = f(ID ); VIN=10V Parameter: RCC , Tj 0 10 20 30 A 50 ID 100 200 300 V 500 VCC 25C°

10 Ohm

27 Ohm

68 Ohm

125C° no Rcc Transient thermal impedance ZthJC = f(tP ) Parameter: D=tP /T 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 2 s tP -3 10 -2 10 -1 10 0 10 1 10 K/W R thJC 0.005 0.01 0.02 0.05 0.1 0.2 D=0.5

14.07.1998Semiconductor Group Page 9 BTS 941 Application examples: Current Sense Features and Status Signals D S IN CC µC Vbb HITFET RCCVCC IN V cc V cc open load thermal shutdown reached triptemperature The accuray of Vcc is at each temperature about –10 % Status signal of thermal shutdown by monitoring input current D S IN µC Vbb HITFETVIN R St VIN thermal shutdown D V CC µC DV = RST *IIN(3)

14.07.1998Semiconductor Group Page 10 BTS 941 Package and ordering code all dimensions in mm Ordering code: Q67060-S6702-A4 Orderin g Code: Q67060-S6702-A2 Ordering Code: Q67060-S6702-A3

14.07.1998Semiconductor Group Page 11 BTS 941 Edition 7.97 Published by Siemens AG, Bereich Halbleiter Vetrieb, Werbung, Balanstraße 73,

81541 München

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