BTS780GP INFINEON | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 18
Technical content
Features
- Quad switch driver
- Free configureable as bridge or quad-switch
- Optimized for DC motor management applications
- Ultra low RDS ON @2 5 °C: High-side switch: typ. 34 mΩ , Low-side switch: typ. 15 mΩ
- High peak current capability of typ. 44 A @ 25 °C
- Low quiescent current of typ. 15µA @ 25 °C
- SMD-Power-Package, optimized for small size and thermal performance
- Load and GND-short-circuit-protected
- Operates up to 36 V
- 2-Bit status flag diagnosis
- Overtemperature shut down with hysteresis
- Short-circuit detection and diagnosis
- Open-load detection and diagnosis
- C-MOS compatible inputs
- Internal clamp diodes
- Isolated sources for external current sensing
- Over- and under-voltage detection with hysteresis
- Fast low-side switches for PWM
Description
The BTS 780 GP is part of the TrilithIC family containing one double high-side switch and two low-side switches in one P-TO263-15-1 package. “Silicon instead of heatsink” becomes true The ultra low RDS ON of this device avoids power dissipation. It saves costs in mechanical construction and mounting and increases the efficiency. Type Ordering Code Package BTS 780 GP Q67006-A9320 P-TO263-15-1
The high-side switches are produced in the SMART SIPMOS ® technology. They are fully protected and contain the signal conditioning circuitry for diagnosis (the comparable standard high-side product is the BTS 734L1). For minimized RDS ON the two low-side switches are produced in S-FET logic level technology (the comparable standard product is the BUZ 100SL ). Each drain of these three chips is mounted on separated leadframes (see Figure 1). The sources of all four power transistors are connected to separate pins. So the BTS 780 GP can be used in H-Bridge configuration as well as in any other switch configuration. Moreover, it is possible to add current sense resistors. All these features open a broad range of automotive and industrial applications.
Figure 1 Pin Configuration (top view) SL1 SL1 AEP02224 GL1 3 4GND GH1 5 6ST1 SH1 7 GND GH2 ST2 11 12SH2 SL2 13 14SL2 GL2 15 Heat-Slug 1 Molding Compound DL1 Heat-Slug 2 DHVS Heat-Slug 3 DL2 DHVS 8 17
Bold type: Pin needs power wiring. Pin Definitions and Functions Pin No. Symbol Function 1, 2 SL1 Source of low-side switch 1
3 GL1 Gate of low-side switch 1
4, 9 GND Ground
5 GH1 Gate of high-side switch 1
6 ST1 Status of high-side switch 1; open Drain output
7 SH1 Source of high-side switch 1
8, 17 DHVS Drain of high-side switches and power supply voltage Heat-Slug 2 or Heat-Dissipator
10 GH2 Gate of high-side switch 2
11 ST2 Status of high-side switch 2; open Drain output
12 SH2 Source of high-side switch 2
13, 14 SL2 Source of low-side switch 2
15 GL2 Gate of low-side switch 2
16 DL2 Drain of low-side switch 2
Heat-Slug 3 or Heat-Dissipator
18 DL1 Drain of low-side switch 1
Heat-Slug 1 or Heat-Dissipator
1, 2 13, 14 SL2SL1 RO2 4, 9 15GL2 DHVS 8, 17 SH2H GL1 GND GH2 GH1 ST2 ST1 AEB02225
2 Circuit Description
2.1 Input Circuit
The control inputs GH1,2 consist of TTL/CMOS compatible Schmitt-Triggers with hysteresis. Buffer amplifiers are driven by these stages and convert the logic signal into the form necessary for driving the power output stages. The inputs are protected by ESD clamp-diodes. The inputs GL1 and GL2 are connected to a standard N-channel logic level power-MOS gate.
2.2 Output Stages
The output stages consist of an ultra low RDS ON Power-MOS H-Bridge. Protective circuits make the outputs short-circuit proof to ground and load short-circuit proof. In H- bridge configuration, the D-MOS body-diodes can be used for freewheeling when commutating inductive loads. If the high-side switches are used as single switches, positive and negative voltage spikes which occur when driving inductive loads are limited by integrated power clamp diodes (c.f. BTS 734L1 datasheet for a detailed description).
2.3 Short-Circuit Protection (valid only for the high-side switches)
The outputs are protected against – output short circuit to ground, and – overload (load short circuit). An internal OP-Amp controls the Drain-Source-Voltage of the HS-Switches by comparing the DS-Voltage-drop with an internal reference voltage. Above this trippoint the OP-Amp reduces the output current depending on the junction temperature and the drop voltage. In the case of an overloaded high-side switch the corresponding status output is set to low. If the HS-Switches are in OFF-state-Condition internal resistors RO1,2 from SH1,2 to GND pull the voltage at SH1,2 to low values. On each output pin SH1 and SH2 an output examiner circuit compares the output voltages with the internal reference voltage VEO. This results in switching the corresponding status output to low if the source voltage in OFF-Condition is higher then VEO. In H-Bridge condition this feature can be used to protect the low-side switches against short circuit to VS during the OFF-period.
2.4 Overtemperature Protection (valid only for the high-side-switches)
The chip also incorporates an overtemperature protection circuit with hysteresis which switches off the output transistors and sets the status output to low.
2.5 Under-Voltage-Lockout (UVLO)
When VS reaches the switch-on voltage VUV ON the IC becomes active with a hysteresis. The High-Side output transistors are switched off if the supply voltage VS drops below the switch off value VUV OFF .
2.6 Over-Voltage-Lockout (OVLO)
When VS reaches the switch-off voltage VOV OFF the High-Side output transistors are switched off with a hysteresis. The IC becomes active if the supply voltage VS drops below the switch-on value VOV ON .
2.7 Open Load Detection
Open load is detected by current measurement in the High-Side switches during ON- condition. If the output current drops below an internally fixed level (open circuit detection current) the error flag is set with a delay.
2.8 Status Flag
The status flag outputs are open drain outputs with Zener-diodes which require pull-up resistors, c.f. the application circuit on Page 16. Various errors as listed in the table “Diagnosis” are detected by switching the open drain outputs ST1 or ST2 to low.
3 Truthtable and Diagnosis (valid only for the High-Side-Switches)
Flag GH1 GH2 SH1 SH2 ST1 ST2 Remarks Inputs Outputs Normal operation; identical with functional truth table L L H H L H L H stand-by mode switch1 active switch2 active both switches active Open load at high-side switch1 Open load at high-side switch2 X X Z Z H L H X L H X Z Z H detected detected Short circuit to DHVS at high-side switch1 Short circuit to DHVS at high-side switch2 X X H H H L H X L H X H H H detected detected Overtemperature high-side switch1 0 X X L L X X 1d e t e c t e d Overtemperature high-side switch2 X X X X L L 0d e t e c t e d Overtemperature both high-side switch X X L L L L L L detected detected Over- and Under-Voltage X X L L 1 1 not detected Inputs: Outputs: Status: 0 = Logic LOW Z = Output in tristate condition 1 = No error 1 = Logic HIGH L = Output in sink condition 0 = Error X = don’t care H = Output in source condition X = Voltage level undefined
4 Characteristics
Note: Maximum ratings are absolute ratings; exceeding any one of these values may cause irreversible damage to the integrated circuit.
4.1 Absolute Maximum Ratings
–4 0 °C < Tj < 150 °C Parameter Symbol Limit Values Unit Remarks min. max. High-Side-Switches (Pins DHVS, GH1,2 and SH1,2) Supply voltage VS – 0.3 43 V – HS-drain current IDHS – 30 * A * internally limited HS-input current IGH – 2 2 mA Pin GH1 and GH2 HS-input voltage VGH – 10 16 V Pin GH1 and GH2 Status Output ST Status Output current IST – 5 5 mA Pin ST1 and ST2 Low-Side-Switches (Pins DL1,2, GL1,2 and SL1,2) Break-down voltage V(BR)DSS 50 – V VGS = 0 V; ID ≤ 1 mA LS-drain current IDLS –3 0 A – LS-drain current IDLS –5 0 A t < 1 ms; ν< 0.1 LS-input voltage VGL – 10 14 V Pin GL1 and GL2 Temperatures Junction temperature Tj – 40 150 °C– Storage temperature Tstg – 50 150 °C–
Note: In the operating range the functions given in the circuit description are fulfilled.
4.2 Operating Range
Parameter Symbol Limit Values Unit Remarks min. max. Supply voltage VS VUV OFF 36 V After VS rising above VUV ON Input voltages VGH – 0.3 15 V – Input voltages VGL – 9 13 V – Status output current IST 0 2 mA Pin ST1 or ST2 HS-junction temperature TjHS – 40 150 °C– LS-junction temperature TjLS – 40 150 °C–
4.3 Thermal Resistances (one HS-LS-Path active)
Parameter Symbol Limit Values Unit Remarks min. max. LS-junction case RthjCLS – 0.5 K/W measured to pin 16 or 18 HS-junction case RthjCHS – 0.5 K/W measured to pin 17 Junction ambient Rthja – 21 K/W measured on test PCB 1) 1) Device on 50 mm× 33 mm epoxy PCB with 6 cm2 cooling-area in free air. C.f. PCB description on Page 17
4.4 Electrical Characteristics
ISH1 = ISH2 = ISL1 = ISL2 = 0 A; – 40 °C < Tj < 150 °C; 8 V < VS < 18 V unless otherwise specified Parameter Symbol Limit Values Unit Test Condition min. typ. max. Current Consumption Quiescent current IS –1 5 3 0 µAG H 1 = G H 2 = L VS = 13.2 V Tj = 25°C Quiescent current IS ––4 2 µAG H 1 = G H 2 = L VS = 13.2 V Supply current IS –24m A G H 1 o r G H 2 = H Supply current IS –48m A G H 1 a n d G H 2 = H Under-Voltage-Lockout (UVLO) Switch-ON voltage VUV ON –5 . 2 7V VS increasing Switch-OFF voltage VUV OFF 3.5 4.2 5.0 V VS decreasing Switch ON/OFF hysteresisVUV HY –1–V VUV ON – VUV OFF Over-Voltage-Lockout (OVLO) Switch-OFF voltage VOV OFF 36 – 43 V VS increasing Switch-ON voltage VOV ON 3 5 ––V VS decreasing Switch OFF/ON hysteresisVOV HY –0 . 5 –V VOV OFF – VOV ON
High-Side-Switches 1, 2 Static drain-source on-resistance RDS ON H – 3 44 0m Ω ISH =2A Tj = 25 °C Static drain-source on-resistance RDS ON H ––7 5 m Ω ISH =2A Leakage current IHSLK ––1 0 µA VGH = VSH = 0 V Body-diode forward-voltage @ IFH = 2 A VFH –0 . 8 1 . 2 V Tj = – 40 °C VFH –0 . 7 1 . 1 V Tj = 25 °C VFH –0 . 5 0 . 8 V Tj = 150 °C Clamp-diode leakage- current (IFH + ISH ) ILKCL ––1 0 m A IFH = 2 A Short Circuit to GND Initial peak SC currentISCP 47 55 66 A Tj = – 40°C Initial peak SC currentISCP 35 44 54 A Tj = 25°C Initial peak SC currentISCP 29 36 45 A Tj = 85°C Initial peak SC currentISCP 21 27 34 A Tj = 150°C Short Circuit to V S OFF-state examiner- voltage VEO 234V VGH = 0 V Output pull-down-resistorRO 4 1 03 0k Ω – Open Circuit Detection current IOCD 0.05 – 1.2 A –
4.4 Electrical Characteristics (cont’d)
ISH1 = ISH2 = ISL1 = ISL2 = 0 A; – 40 °C < Tj < 150 °C; 8 V < VS < 18 V unless otherwise specified Parameter Symbol Limit Values Unit Test Condition min. typ. max.
Switch-ON-time; to 90% VSH tON – 130 300 µs1 2 Ω resistive load VS = 13.2 V Switch-OFF-time; to 10% VSH tOFF – 260 450 µs1 2 Ω resistive load VS = 13.2 V Control Inputs GH 1, 2 H-input voltage thresholdVGHH –2 . 8 3 . 3 V – L-input voltage thresholdVGHL 1.5 2.3 – V – Input voltage hysteresisVGHHY –0 . 5 –V – H-input current IGHH 20 50 90 µA VGH = 5 V L-input current IGHL 42 5 5 0 µA VGH = 0.4 V Input series resistanceRI 2.5 4.2 6 k Ω – Zener limit voltage VGHZ 5.4 6.1 – V IGH = 1.6 mA Low-Side-Switches 1, 2 Static drain-source on-resistance RDS ON L – 1 52 0m Ω ISL =2A VGL = 5 V Tj = 25 °C Static drain-source on-resistance RDS ON L ––3 5 m Ω ISH =2A Leakage current ILKL – < 1 100 µA VGL = 0 V VDS = 18 V Body-diode forward-voltage @ IFL = 2 A VFL –0 . 8 1 . 2 V Tj = – 40 °C VFL –0 . 7 1 . 1 V Tj = 25 °C VFL –0 . 5 0 . 8 V Tj = 150 °C ISH1 = ISH2 = ISL1 = ISL2 = 0 A; – 40 °C < Tj < 150 °C; 8 V < VS < 18 V unless otherwise specified Parameter Symbol Limit Values Unit Test Condition min. typ. max.
Control Inputs GL1, 2 Gate-threshold-voltage VGL(th) 0.6 1.6 2.4 V VGL = VDSL IDL = 130 µA Transconductance gfs –5–S VDSL = 20 V; IDL = 20 A Status Flag Output ST Low output voltage VSTL –0 . 3 0 . 6 V IST = 1.6 mA Leakage current ISTLK –0 . 4 2 µA VST = 5 V Zener-limit-voltage VSTZ 5.4 6.1 – V IST = 1.6 mA Thermal Shutdown Thermal shutdown junction temperature TjSD 160 – 190 °C– Thermal switch-on junction temperature TjSO 150 – 180 °C– Temperature hysteresis ΔT –1 0 – °C ΔT = TjSD – TjSO Note: Shutdown temperatures are guaranteed by design ISH1 = ISH2 = ISL1 = ISL2 = 0 A; – 40 °C < Tj < 150 °C; 8 V < VS < 18 V unless otherwise specified Parameter Symbol Limit Values Unit Test Condition min. typ. max.
HS-Source-Current Named during Short Circuit Named during Open Circuit Named during Leakage-Cond. ISH1,2 ISCP IOCD IHSLK Driver IN OUT 0 0 L L 0 L1 1 0 H L HH1 1 Diagnosis Biasing and Protection RΙ1 RI2 DL2 SH1 DL1 1, 2 13, 14 SL2SL1 4, 9 15GL2 DHVS 8, 17 SH2H GL1 GND GH2 GH1 ST2 ST1 VS=12 V C L 100 µF C S 470 nF IFH1, 2 IS ISL1 ISL2 ISH2RO1 RO2 IDL2, ILKL IDL1, ILKL ISH1 VDSH2 -VFH2 VDSH1 -VFH1 VEO1 VDSL1 -VFL1 VUVON VUVOFF VGL2 VGL(th)2 VGL1 VGL(th)1 VGH2 VGH1 VST2 VSTL2 VSTZ2 VST1 VSTL1 VSTZ1 VEO2 VDSL2 -VFL2 AES0226
Figure 4 Application Circuit Driver IN OUT 0 0 L L 0 L1 1 0 H L HH1 1 RO1 Diagnosis Biasing and Protection RΙ1 RI2 M VCC DL2 SH1 DL1 1, 2 13, 14 SL2SL1 C Q 22 µF µP RO2 ST1 DO1 1N4001 10GH2 GND 4, 9 10 kΩ RS 3GL1 15GL2 TLE 4278G Watchdog Resest Q RWD RQ 100 kΩ D C S 10 µF GND VS=12 VΙ C D 47 nF DHVS 8, 17 SH2H Z39 RQ 100 kΩ 11RS 10 kΩ ST2 GH1 AES02227GND
5 Test-PCB
The Printed Circuit Board is made of 1.5 mm thick standard FR4 material with double sided copper plating of 35µm thickness. The 28 mm× 21 mm cooling area is through- connected by a 1.1 mm× 1.1 mm pattern of vias with 0.5 mm diameter. Figure 5 Test-PCB Outline
6 Solder Pad for Reflow Soldering
BTS78XLPMini1.1BTS780 Str Application Board for High-Current-Motorbridge DL1 SL1 DHVs SL1 DL2 BOTTOM TOP (component side) Dimensions in mm AEA02732 21.6 8.4 9.5 0.4 0.8 P-TO263-15-1 (Plastic Transistor Single Outline Package) HLG09223Dimensions in mm
7 Package Outlines
A 8˚ max. BA0.25 M 0.1 Typical ±0.221.6 8.31) 8.21) (15) ±0.29.25 ±0.31 0...0.15 0.8±0.1 ±0.11.27 4.4 B 0.5±0.1 ±0.32.7 4.7±0.5 0.05 0.1 All metal surfaces tin plated, except area of cut. 2.4 14x1.4 8.41) 8.18±0.15 1±0.2 ±0.155.56 4.81) P-TO263-15-1 (Plastic Transistor Single Outline Package) GPT09151 Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book “Package Information”. Dimensions in mmSMD = Surface Mounted Device