BTS736L2

BTS736L2 INFINEON | Alldatasheet

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PROFET ® BTS 736 L2 Semiconductor Group 1 of 14 2003-Oct-01 Smart High-Side Power Switch Two Channels: 2 x 40mΩ Status Feedback Product Summary Package Operating Voltage V bb(on) 4.75...41V Active channels one two parallel On-state Resistance R ON 40m Ω 20m Ω Nominal load current I L(NOM) 4.8A 7.3A Current limitation I L(SCr) 30A 30A General Description

• N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology.
• Providing embedded protective functions

Applications

• µC compatible high-side power switch with diagnostic feedback for 5V, 12V and 24V grounded loads
• All types of resistive, inductive and capacitve loads
• Most suitable for loads with high inrush currents, so as lamps
• Replaces electromechanical relays, fuses and discrete circuits Basic Functions
• Very low standby current
• CMOS compatible input
• Fast demagnetization of inductive loads
• Stable behaviour at undervoltage
• Wide operating voltage range
• Logic ground independent from load ground Protection Functions
• Short circuit protection
• Overload protection
• Current limitation
• Thermal shutdown
• Overvoltage protection (including load dump) with external resistor
• Reverse battery protection with external resistor
• Loss of ground and loss of V bb protection
• Electrostatic discharge protection (ESD) Diagnostic Function
• Diagnostic feedback with open drain output
• Open load detection in ON-state
• Feedback of thermal shutdown in ON-state Block Diagram P-DSO-20-9 Vbb Logic Channel Logic Channel IN1 ST1 IN2 ST2 GND Load 1 Load 2 PROFET OUT 1 OUT 2

Semiconductor Group 2 2003-Oct-01 Functional diagram Pin Definitions and Functions Pin Symbol Function 1,10, 11,12, 15,16, 19,20 V bb Positive power supply voltage. Design the wiring for the simultaneous max. short circuit currents from channel 1 to 2 and also for low thermal resistance

3 IN1 Input 1,2, activates channel 1,2 in case of

7 IN2 logic high signal

17,18 OUT1 Output 1,2, protected high-side power output 13,14 OUT2 of channel 1,2. Design the wiring for the max. short circuit current

4 ST1 Diagnostic feedback 1,2 of channel 1,2,

8 ST2 open drain, low on failure

2 GND1 Ground 1 of chip 1 (channel 1)

6 GND2 Ground 2 of chip 2 (channel 2)

5,9 N.C. Not Connected Pin configuration (top view) Vbb 1 • 20 V bb GND1 2 19 V bb IN1 3 18 OUT1 ST1 4 17 OUT1 N.C. 5 16 V bb GND2 6 15 V bb IN2 7 14 OUT2 ST2 8 13 OUT2 N.C. 9 12 V bb Vbb 10 11 V bb OUT1 overvoltage protection logic internal voltage supply ESD temperature sensor clamp for inductive load gate control charge pump current limit Open load detection ST1 VBB LOAD IN1 PROFET GND1 Control and protection circuit of channel 2 IN2 ST2 OUT2 Channel 1 GND2

Semiconductor Group 3 2003-Oct-01 Maximum Ratings at Tj = 25°C unless otherwise specified Parameter Symbol Values Unit Supply voltage (overvoltage protection see page 4) Vbb 43 V Supply voltage for full short circuit protection Tj,start = -40 ...+150°C Vbb 24 V Load current (Short-circuit current, see page 5) IL self-limited A Load dump protection1) VLoadDump = VA + Vs, VA = 13.5 V R I2) = 2 Ω , td = 200 ms; IN = low or high, each channel loaded with R L = 9.0 Ω , VLoad dump 3) 60 V Operating temperature range Storage temperature range Tj Tstg -40 ...+150 -55 ...+150 Power dissipation (DC)4) Ta = 25°C: (all channels active) Ta = 85°C: Ptot 3.8 2.0 W Maximal switchable inductance, single pulse Vbb = 12V, Tj,start = 150°C4), IL = 4.0 A, EAS = 296 mJ, 0 Ω one channel: IL = 6.0 A, EAS = 631 mJ, 0 Ω two parallel channels: see diagrams on page 9 ZL 19.0 17.5 mH Electrostatic discharge capability (ESD) IN: (Human Body Model) ST: out to all other pins shorted: R=1.5kΩ ; C=100pF VESD 1.0 4.0 8.0 kV Input voltage (DC) VIN -10 ... +16 V Current through input pin (DC) Current through status pin (DC) see internal circuit diagram page 8 IIN IST ±2.0 ±5.0 mA Thermal Characteristics Parameter and Conditions Symbol Values Unit min typ Max Thermal resistance junction - soldering point4),5) each channel: R thjs -- -- 12 K/W junction - ambient4) one channel active: all channels active: R thja -- 1) Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 150Ω resistor for the GND connection is recommended. 2) R I = internal resistance of the load dump test pulse generator 3) VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 4) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb connection. PCB is vertical without blown air. See page 14 5) Soldering point: upper side of solder edge of device pin 15. See page 14

Semiconductor Group 4 2003-Oct-01

Electrical Characteristics

Parameter and Conditions, each of the two channels Symbol Values Unit at Tj = -40...+150°C, Vbb = 12 V unless otherwise specified min typ Max Load Switching Capabilities and Characteristics On-state resistance (Vbb to OUT); IL = 2 A, Vbb ≥ 7V each channel, Tj = 25°C: Tj = 150°C: two parallel channels, Tj = 25°C: see diagram, page 10 R ON m Ω Nominal load current one channel active: two parallel channels active: Device on PCB6), Ta = 85°C, Tj ≤ 150°C IL(NOM) 4.4 6.7 4.8 7.3 -- A Output current while GND disconnected or pulled up7); Vbb = 30 V, VIN = 0, see diagram page 8 IL(GNDhigh) -- -- 2 mA Turn-on time8) IN to 90% VOUT : Turn-off time IN to 10% VOUT : R L = 12 Ω ton toff 100 120 200 250 µs Slew rate on 8) Tj = -40°C: 10 to 30% VOUT , R L = 12 Ω Tj = 25°C...150°C: dV/dton 0.15 0.15 0.8 V/µs Slew rate off 8) Tj = -40°C: 70 to 40% VOUT , R L = 12 Ω Tj = 25°C...150°C: -dV/dtoff 0.15 0.15 0.8 V/µs Operating Parameters Operating voltage Tj=-40 T j=25...150°C: Vbb(on) 4.75 -- V Overvoltage protection9) Tj =-40°C: I bb = 40 mA Tj =25...150°C: Vbb(AZ) 41 V Standby current10) Tj =-40°C...25°C: VIN = 0; see diagram page 10 T j =150°C: Ibb(off) -- µA Leakage output current (included in Ibb(off)) VIN = 0 IL(off) -- 1 10 µA Operating current 11), VIN = 5V, IGND = IGND1 + IGND2 , one channel on: two channels on: IGND 0.8 1.6 1.4 2.8 mA 6) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb connection. PCB is vertical without blown air. See page 14 7) not subject to production test, specified by design 8) See timing diagram on page 11. 9) Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 150Ω resistor for the GND connection is recommended). See also VON(CL) in table of protection functions and circuit diagram on page 8. 10) Measured with load; for the whole device; all channels off 11) Add IST , if IST > 0

Semiconductor Group 5 2003-Oct-01 Parameter and Conditions, each of the two channels Symbol Values Unit at Tj = -40...+150°C, Vbb = 12 V unless otherwise specified min typ Max Protection Functions12) Current limit, (see timing diagrams, page 12) Tj =-40°C: Tj =25°C: Tj =+150°C: IL(lim) 40 A Repetitive short circuit current limit, Tj = Tjt each channel two parallel channels (see timing diagrams, page 12) IL(SCr) -- A Initial short circuit shutdown time Tj,start =25°C: (see timing diagrams on page 12) toff(SC) -- 1.7 -- ms Output clamp (inductive load switch off)13) at VON(CL) = Vbb - VOUT , IL= 40 mA Tj =-40°C: Tj =25°C...150°C: VON(CL) V Thermal overload trip temperature Tjt 150 -- -- °C Thermal hysteresis ∆Tjt -- 10 -- K Reverse Battery Reverse battery voltage 14) - Vbb -- -- 32 V Drain-source diode voltage (Vout > Vbb) -VON -- 600 -- mV 12) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. 13) If channels are connected in parallel, output clamp is usually accomplished by the channel with the lowest V ON(CL) 14) Requires a 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source diode has to be limited by the connected load. Power dissipation is higher compared to normal operating conditions due to the voltage drop across the drain-source diode. The temperature protection is not active during reverse current operation! Input and Status currents have to be limited (see max. ratings page 3 and circuit page 8).

Semiconductor Group 6 2003-Oct-01 Parameter and Conditions, each of the two channels Symbol Values Unit at Tj = -40...+150°C, Vbb = 12 V unless otherwise specified min typ Max Diagnostic Characteristics Open load detection current, (on-condition) each channel I L (OL)1 100 -- 900 mA Input and Status Feedback15) Input resistance (see circuit page 8) R I 2.5 3.5 6 kΩ Input turn-on threshold voltage VIN(T+) 1.7 -- 3.2 V Input turn-off threshold voltage VIN(T-) 1.5 -- -- V Input threshold hysteresis ∆ VIN(T) -- 0.5 -- V Off state input current VIN = 0.4 V: IIN(off) 1 -- 50 µA On state input current VIN = 5 V: IIN(on) 20 50 90 µA Delay time for status with open load after switch off; (see diagram on page 13) td(ST OL4) 100 520 900 µs Status invalid after positive input slope (open load) td(ST) -- -- 500 µs Status output (open drain) Zener limit voltage IST = +1.6 mA: ST low voltage IST = +1.6 mA: VST(high) VST(low) 5.4 6.1 0.4 V 15) If ground resistors RGND are used, add the voltage drop across these resistors.

Semiconductor Group 7 2003-Oct-01 Truth Table Channel 1 Input 1 Output 1 Status 1 Channel 2 Input 2 Output 2 Status 2 level level BTS 736L2 Normal operation L H L H H H Open load L H Z H H L Overtem- perature L H L L H L L = "Low" Level X = don't care Z = high impedance, potential depends on external circuit H = "High" Level Status signal valid after the time delay shown in the timing diagrams Parallel switching of channel 1 and 2 is easily possible by connecting the inputs and outputs in parallel. The status outputs ST1 and ST2 have to be configured as a 'Wired OR' function with a single pull-up resistor. Terms PROFET IN1 ST1 OUT1 GND1 Vbb VST1V IN1 IIN1 Vbb IL1 VOUT1IGND1 VON1 Leadframe 17,18 Ibb IST1 R GND1 Chip 1 PROFET IN2 ST2 OUT2 GND2 Vbb VST2V IN2 IIN2 IL2 VOUT2IGND2 VON2 Leadframe 13,14IST2 R GND2 Chip 2 Leadframe (Vbb) is connected to pin 1,10,11,12,15,16,19,20 External RGND optional; two resistors RGND1 , RGND2 = 150 Ω or a single resistor RGND = 75 Ω for reverse battery protection up to the max. operating voltage.

Semiconductor Group 8 2003-Oct-01 Input circuit (ESD protection), IN1 or IN2 IN GND IR ESD-ZD III The use of ESD zener diodes as voltage clamp at DC conditions is not recommended. Status output, ST1 or ST2 ST GND ESD- ZD +5V RST(ON) ESD-Zener diode: 6.1 V typ., max 5.0 mA; RST(ON) < 375 Ω at 1.6 mA. The use of ESD zener diodes as voltage clamp at DC conditions is not recommended. Inductive and overvoltage output clamp, OUT1 or OUT2 +Vbb OUT VZ V ON Power GND VON clamped to VON(CL) = 47 V typ. Overvolt. and reverse batt. protection + Vbb IN ST STR GND GNDR Signal GND Logic PRO FET VZ2 IR VZ1 Load GND LoadR OUT STR + 5V VZ1 = 6.1 V typ., VZ2 = 47 V typ., R GND = 150 Ω , R ST = 15 kΩ , R I= 3.5 kΩ typ. In case of reverse battery the load current has to be limited by the load. Temperature protection is not active Open-load detection OUT1 or OUT2 ON-state diagnostic Open load, if VON < RON ·IL(OL); IN high Open load detection Logic unit + Vbb OUT ON VON GND disconnect PROFET V IN ST OUT GND bb Vbb VIN VST VGND Any kind of load. In case of IN = high is VOUT ≈ VIN - VIN(T+). Due to VGND > 0, no VST = low signal available.

Semiconductor Group 9 2003-Oct-01 GND disconnect with GND pull up PROFET V IN ST OUT GND bb Vbb VGND VIN VST Any kind of load. If VGND > VIN - VIN(T+) device stays off Due to VGND > 0, no VST = low signal available. Vbb disconnect with energized inductive load PROFET V IN ST OUT GND bb Vbb high For inductive load currents up to the limits defined by ZL (max. ratings and diagram on page 9) each switch is protected against loss of Vbb. Consider at your PCB layout that in the case of Vbb dis- connection with energized inductive load all the load current flows through the GND connection. Inductive load switch-off energy dissipation PROFET V IN ST OUT GND bb E E E EAS bb L R ELoad RL L {LZ Energy stored in load inductance: EL = 1/2·L·I2 L While demagnetizing load inductance, the energy dissipated in PROFET is EAS = Ebb + EL - ER = VON(CL)·iL(t) dt, with an approximate solution for RL > 0 Ω : EAS = IL· L 2·R L (Vbb + |VOUT(CL)|) ln (1+ IL·R L |VOUT(CL)| ) Maximum allowable load inductance for a single switch off (one channel)4) L = f (IL ); Tj,start = 150°C, Vbb = 12 V, RL = 0 Ω ZL [mH] 100 1000 23456789 1 0 1 1 1 2 I L [A]

Semiconductor Group 10 2003-Oct-01 Typ. on-state resistance RON = f (Vbb,Tj ); IL = 2 A, IN = high R ON [mOhm] 3 5 7 9 30 40 Tj = 150°C 25°C -40°C V bb [V] Typ. standby current Ibb(off) = f (Tj ); Vbb = 9...34 V, IN1,2 = low Ibb(off) [µA] -50 0 50 100 150 200 T j [°C]

Semiconductor Group 13 2003-Oct-01 Figure 5b: Open load: turn on/off to open load IN ST L t I td(STOL4)

Semiconductor Group 14 2003-Oct-01 Package and Ordering Code Standard: P-DSO-20-9 Sales Code BTS 736 L2 Ordering Code Q67060-S7011-A2 All dimensions in millimetres Definition of soldering point with temperature Ts: upper side of solder edge of device pin 15. Pin 15 Printed circuit board (FR4, 1.5mm thick, one layer 70µm, 6cm 2 active heatsink area) as a reference for max. power dissipation Ptot, nominal load current IL(NOM) and thermal resistance Rthja Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81669 München © Infineon Technologies AG 2001 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.