BTS730

BTS730 INFINEON | Alldatasheet

Document overview

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Technical content

The device allows continuous power control for lamps,LEDs or inductive loads. ! Highside switch (Bootstrap) ! Overtemperatur protection ! Short circuit / overload protection through pulse width reduction and overload shutdown ! Load dump protection ! Undervoltage and overvoltage shutdown with auto-restart and hysteresis ! Reverse battery protection 1) ! Timing frequency adjustable ! Controlled switching rise and fall times ! Maximum current internally limited ! Protection against loss of GND 2) ! Electrostatic discharge (ESD) protection ! Package: P-DSO-20-6 (SMD) Note: Switching frequency is programmed with an external capacitor Type Ordering Code Marking Package BTS730 Q67060-S7007-A2 - P-DSO-20-6 Maximum Ratings Parameter Symbol Values Unit Active overvoltage prodection V bb (AZ) >40 V Short circuit current I SC self-limited - Input current (DC) I Ct 2m A Pin1 (C t) and pin19 (V C) I VC 2m A Operating temperature range T j -40...+150 °C Storage temperature range T stg -50...+150 Power dissipation 3) T a=25°C P tot 3W T a=85°C 2W Thermal resistance chip-case 3) R th JC ≤ 35 K/W chip-ambient R th JA ≤ 75 Electrostatic discharge capability (ESD) V ESD ≤ 1 kV (Human Body Model) acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993; R=1.5KΩ ; C=100pF 1) With 150Ω resistor in signal GND connection. 2) Potential between signal GND and load GND >0.5V 3) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2(one layer,70µm thick) copper area for Vbb conection, PCB is vertical without air blowing. Semiconductor Group 2003-Oct-01

Pin Definitions and Funktions Pin Configuration (top view) Pin Symbol Funktions

1 C t Timing capacitor C t 1• 20 V REF

for frequency C B1 21 9 V C

2 C B1 Bootstrap capacitor C B2 3 18 GND

3 C B2 V bb 41 7 V bb

4,5,6,7 V bb Supply voltage V bb 51 6 V bb 14,15,16,17 (Leadframe connected) V bb 61 5 V bb 8,9,10 OUT Output V bb 71 4 V bb 11,12,13 OUT 8 13 OUT

18 GND Ground OUT 9 12 OUT

C Voltage for PWM-Control OUT 10 11 OUT

20 V REF Reference Voltage

Cap. Bootstrap Capacitor CB1 25k68nF 22nF (4,5,6,7) Temperature Sensor (14,15,16,17) Semiconductor Group 2003-Oct-01

Electrical Characteristics

at T C = 25 °C, Vbb = 12 V, unless otherwise specified. C Bootstrap = 22nF Parameter Symbol Values Unit min. typ. max. On-state resistance R ON - - 70 m Ω I L=3A, V bb=12V Operating voltage V bb 5.9 1) - 16.9 2) V Nominal current, calculated value I L-ISO 3- - A ISO-standard:Vbb-VOUT ≤ 0.5V, TC = 85°C Load current limit I LLim -2 0 - A V bb-V OUT> 1V, TC = -40 ...+150°C Undervoltage shutdown V bb(LOW) 3 4.2 5.4 V Overvoltage shutdown V bb(HI) 17 18 19 V Max.output voltage (RMS) V RMSmax 12 - 14 V I L = 3A, V bb > 12 V Reference voltage V REF 23 V I REF= 10mA, TC = -40 ...+150°C Reference current I REF - 150 - mA pin 18 (GND) to pin 20 (VREF) short Internal current consumption during I R -5 m A operation, measured in PWM gap T C = -40 ...+150°C Bootstrap voltage, pin 2 (C B1) to pin 3 (C B2) V B -1 0 - V PWM frequency f PWM 50 - 100 Hz Max. pulse duty factor D imax 95 98 - % I L = 3A, V C=0V , (50% V OUT) Min. pulse duty factor D imin 3 8 14 % I L = 3A, V C=0V , (50% V OUT) Slew rate "on" du/dt (on) 20 - 120 mV/ µs 10 ... 90% I OUT Slew rate "off" du/dt (off) 20 - 120 mV/ µs 90 ... 10% I OUT Thermal overload trip temperature Tj 150 - - °C 1) Note: undervoltage shutdown 2) Note: overvoltage shutdown Semiconductor Group 2003-Oct-01

V GND C Pul se-width Comparator 2 µ A max. 2mA (20) (19) (18) Anal og Logi c-Input VC (19) Voltage Regulator Tri angul ar Waveform C GND t Timi ng Generator 6 µ A max. 2mA (1) (18) V bb Generator Input Ct (1) Vol tage Sensor (typ) Undervoltage Sensor Overvoltage Sensor GND +Vbb Signal to the logic unit V bb < 4.2 V +Vbb Signal to the logic unit V bb > 18 V GND Semiconductor Group 2003-Oct-01

Package Outline P-DSO-20-6 Dimensions in mm Dimensions in mm VbbVREF VC GND 68nF CB1 CB2Ct 22nF OUT 220nF Vbb 12 3 4,5,6,7 14,15,16,17 8,9,10 11,12,13 150# k25 # BTS730 Load 150#Resistor for reverse battery and load dump prodection Dimming of dashboard lighting Semiconductor Group 2003-Oct-01

Typ.on-state resistance R ON= f (T C ) 100 120 140 -50 -25 0 25 50 75 100 125 150 TC °C mΩ Typ. Load current limit I LLim = f (T C ) -50 -25 0 25 50 75 100 125 150 TC °C A Typ. undervoltage shutdown V bb(LOW) = f (T C) 3,0 3,5 4,0 4,5 5,0 5,5 6,0 -50 -25 0 25 50 75 100 125 150 TC °C V Typ. overvoltage shutdown V bb(HI) = f (T C ) 17,0 17,5 18,0 18,5 19,0 19,5 20,0 -50 -25 0 25 50 75 100 125 150 TC °C V Semiconductor Group 2003-Oct-01

Typ. max. output voltage V RMSmax = f (T C ), Vbb > 12V 12,0 12,5 13,0 13,5 14,0 -50 -25 0 25 50 75 100 125 150 TC °C V Typ. PWM Frequency f PWM = f (T C ) 100 -50 -25 0 25 50 75 100 125 150 TC °C Hz Typ. max. puls duty factor D imax = f (T C ) 100 -50 -25 0 25 50 75 100 125 150 TC °C %Typ. min. puls duty factor D imin = f (T C ) -50 -25 0 25 50 75 100 125 150 TC °C Semiconductor Group 2003-Oct-01