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PROFET ® BTS 728 L2 Semiconductor Group Page 1 of 14 1999-Mar-23 Smart High-Side Power Switch Two Channels: 2 x 60mΩ Status Feedback Product Summary Package Operating Voltage V bb(on) 4.75...41V Active channels one two parallel On-state Resistance R ON 60m Ω 30m Ω Nominal load current I L(NOM) 4.0A 6.0A Current limitation I L(SCr) 17A 17A General Description

  • N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology.
  • Fully protected by embedded protection functions

Applications

  • µC compatible high-side power switch with diagnostic feedback for 5V, 12V and 24V grounded loads
  • All types of resistive, inductive and capacitve loads
  • Most suitable for loads with high inrush currents, so as lamps
  • Replaces electromechanical relays, fuses and discrete circuits Basic Functions
  • Very low standby current
  • CMOS compatible input
  • Improved electromagnetic compatibility (EMC)
  • Fast demagnetization of inductive loads
  • Stable behaviour at undervoltage
  • Wide operating voltage range
  • Logic ground independent from load ground Protection Functions
  • Short circuit protection
  • Overload protection
  • Current limitation
  • Thermal shutdown
  • Overvoltage protection (including load dump) with external resistor
  • Reverse battery protection with external resistor
  • Loss of ground and loss of Vbb protection
  • Electrostatic discharge protection (ESD) Diagnostic Function
  • Diagnostic feedback with open drain output
  • Open load detection in ON-state
  • Feedback of thermal shutdown in ON-state Block Diagram P-DSO-20-9 Vbb Logic Channel Logic Channel IN1 ST1 IN2 ST2 GND Load 1 Load 2 PROFET OUT 1 OUT 2

Semiconductor Group Page 2 1999-Mar-23 Functional diagram Pin Definitions and Functions Pin Symbol Function 1,10, 11,12, 15,16, 19,20 V bb Positive power supply voltage. Design the wiring for the simultaneous max. short circuit currents from channel 1 to 2 and also for low thermal resistance 3I N 1 Input 1,2, activates channel 1,2 in case of

7 IN2 logic high signal

17,18 OUT1 Output 1,2, protected high-side power output 13,14 OUT2 of channel 1,2. Design the wiring for the max. short circuit current 4S T 1 Diagnostic feedback 1,2 of channel 1,2,

8 ST2 open drain, low on failure

2 GND1 Ground 1 of chip 1 (channel 1)

6 GND2 Ground 2 of chip 2 (channel 2)

5,9 N.C. Not Connected Pin configuration (top view) Vbb 1 • 20 V bb GND1 2 19 V bb IN1 3 18 OUT1 ST1 4 17 OUT1 N.C. 5 16 V bb GND2 6 15 V bb IN2 7 14 OUT2 ST2 8 13 OUT2 N.C. 9 12 V bb Vbb 10 11 V bb OUT1 GND1 overvoltage protection logic internal voltage supply ESD temperature sensor clamp for inductive load gate control charge pump current limit Open load detectionST1 VBB LOAD IN1 PROFET Control and protection circuit of channel 2 IN2 ST2 OUT2 Channel 1 GND2

Semiconductor Group Page 3 1999-Mar-23 Maximum Ratings at Tj = 25°C unless otherwise specified Parameter Symbol Values Unit Supply voltage (overvoltage protection see page 4)Vbb 43 V Supply voltage for full short circuit protection Tj,start = -40 ...+150°C Vbb 24 V Load current (Short-circuit current, see page 5)IL self-limited A Load dump protection1) VLoadDump = VA + Vs, VA = 13.5 V R I2) = 2 Ω , td = 200 ms; IN = low or high, each channel loaded with R L = 8.0 Ω , VLoad dump 3) 60 V Operating temperature range Storage temperature range Tj Tstg -40 ...+150 -55 ...+150 Power dissipation (DC)4) Ta = 25°C: (all channels active) Ta = 85°C: Ptot 3.7 1.9 W Maximal switchable inductance, single pulse Vbb = 12V, Tj,start = 150°C4), IL = 4.0 A, EAS = 220 mJ, 0 Ω one channel: IL = 6.0 A, EAS = 540 mJ, 0 Ω two parallel channels: see diagrams on page 9 ZL 19.9 22.3 mH Electrostatic discharge capability (ESD) IN: (Human Body Model) ST: out to all other pins shorted: R=1.5kΩ ; C=100pF VESD 1.0 4.0 8.0 kV Input voltage (DC) VIN -10 ... +16 V Current through input pin (DC) Current through status pin (DC) see internal circuit diagram page 8 IIN IST ±2.0 ±5.0 mA Thermal Characteristics Parameter and Conditions Symbol Values Unit min typ Max Thermal resistance junction - soldering point4),5) each channel:R thjs -- -- 13.5 K/W junction - ambient4) one channel active: all channels active: R thja -- 1) Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 150Ω resistor for the GND connection is recommended. 2) R I = internal resistance of the load dump test pulse generator 3) VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 4) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb connection. PCB is vertical without blown air. See page 14 5) Soldering point: upper side of solder edge of device pin 15. See page 14

Semiconductor Group Page 4 1999-Mar-23

Electrical Characteristics

Parameter and Conditions, each of the two channelsSymbol Values Unit at Tj = -40...+150°C, Vbb = 12 V unless otherwise specified min typ Max Load Switching Capabilities and Characteristics On-state resistance (Vbb to OUT); IL = 2 A, Vbb ≥ 7V each channel, Tj = 25°C: Tj = 150°C: two parallel channels, Tj = 25°C: see diagram, page 10 R ON -- 50 100 120 m Ω Nominal load current one channel active: two parallel channels active: Device on PCB6), Ta = 85°C, Tj ≤ 150°C IL(NOM) 3.6 5.5 4.0 6.0 -- A Output current while GND disconnected or pulled up; Vbb = 30 V, VIN = 0, see diagram page 8; (not tested specified by design) IL(GNDhigh) -- -- 2 mA Turn-on time7) IN to 90% VOUT : Turn-off time IN to 10% VOUT : R L = 12 Ω ton toff 100 100 200 200 µs Slew rate on 7) 10 to 30% VOUT , R L = 12 Ω : dV/dton 0.1 -- 1 V/ µs Slew rate off 7) 70 to 40% VOUT , R L = 12 Ω : -dV/dtoff 0.1 -- 1 V/ µs Operating Parameters Operating voltage Tj=-40 Tj=25...150°C: Vbb(on) 4.75 -- V Overvoltage protection8) Tj =-40°C: I bb = 40 mA Tj =25...150°C: Vbb(AZ) 41 V Standby current9) Tj =-40°C...25°C: VIN = 0; see diagram page 10 Tj =150°C: Ibb(off) -- µA Leakage output current (included in Ibb(off)) VIN = 0 IL(off) -- 1 10 µA Operating current 10), VIN = 5V, IGND = IGND1 + IGND2 , one channel on: two channels on: IGND -- 0.8 1.6 1.5 3.0 mA 6) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb connection. PCB is vertical without blown air. See page 14 7) See timing diagram on page 11. 8) Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 150Ω resistor for the GND connection is recommended). See also VON(CL) in table of protection functions and circuit diagram on page 8. 9) Measured with load; for the whole device; all channels off 10) Add IST , if IST > 0

Parameter and Conditions, each of the two channelsSymbol Values Unit at Tj = -40...+150°C, Vbb = 12 V unless otherwise specified min typ Max Semiconductor Group Page 5 1999-Mar-23 Protection Functions Current limit, (see timing diagrams, page 12) Tj =-40°C: Tj =25°C: Tj =+150°C: IL(lim) 21 A Repetitive short circuit current limit, Tj = Tjt each channel two parallel channels (see timing diagrams, page 12) IL(SCr) -- A Initial short circuit shutdown timeTj,start =25°C: (see timing diagrams on page 12) toff(SC) -- 2.4 -- ms Output clamp (inductive load switch off)11) at VON(CL) = Vbb - VOUT , IL= 40 mA Tj =-40°C: Tj =25°C...150°C: VON(CL) 41 V Thermal overload trip temperature Tjt 150 -- -- °C Thermal hysteresis ΔTjt -- 10 -- K Reverse Battery Reverse battery voltage 12) -Vbb -- -- 32 V Drain-source diode voltage (Vout > Vbb) -VON -- 600 -- mV 11) If channels are connected in parallel, output clamp is usually accomplished by the channel with the lowest VON(CL) 12) Requires a 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source diode has to be limited by the connected load. Power dissipation is higher compared to normal operating conditions due to the voltage drop across the drain-source diode. The temperature protection is not active during reverse current operation! Input and Status currents have to be limited (see max. ratings page 3 and circuit page 8).

Parameter and Conditions, each of the two channelsSymbol Values Unit at Tj = -40...+150°C, Vbb = 12 V unless otherwise specified min typ Max Semiconductor Group Page 6 1999-Mar-23 Diagnostic Characteristics Open load detection current, (on-condition) each channel I L (OL)1 10 -- 500 mA Input and Status Feedback13) Input resistance (see circuit page 8) R I 2.5 3.5 6 k Ω Input turn-on threshold voltage VIN(T+) 1.7 -- 3.2 V Input turn-off threshold voltage VIN(T-) 1.5 -- -- V Input threshold hysteresis Δ VIN(T) -- 0.5 -- V Off state input current VIN = 0.4 V:IIN(off) 1- - 5 0 µA On state input current VIN = 5 V:IIN(on) 20 50 90 µA Delay time for status with open load after switch off; (see diagram on page 13) td(ST OL4) 100 520 900 µs Status output (open drain) Zener limit voltage IST = +1.6 mA: ST low voltage IST = +1.6 mA: VST(high) VST(low) 5.4 6.1 0.4 V 13) If ground resistors RGND are used, add the voltage drop across these resistors.

Semiconductor Group Page 7 1999-Mar-23 Truth Table Channel 1 Input 1 Output 1 Status 1 Channel 2 Input 2 Output 2 Status 2 level level BTS 728L2 Normal operation L H L H H H Open load L H Z H H L Overtem- perature L H L L H L L = "Low" Level X = don't care Z = high impedance, potential depends on external circuit H = "High" Level Status signal valid after the time delay shown in the timing diagrams Parallel switching of channel 1 and 2 is easily possible by connecting the inputs and outputs in parallel. The status outputs ST1 and ST2 have to be configured as a 'Wired OR' function with a single pull-up resistor. Terms PROFET IN1 ST1 OUT1 GND1 V bb V ST1V IN1 IIN1 V bb IL1 V OUT1IGND1 V ON1 Leadframe 17,18 Ibb IST1 R GND1 Chip 1 PROFET IN2 ST2 OUT2 GND2 Vbb V ST2V IN2 IIN2 IL2 V OUT2IGND2 VON2 Leadframe 13,14IST2 R GND2 Chip 2 Leadframe (Vbb) is connected to pin 1,10,11,12,15,16,19,20 External RGND optional; two resistors RGND1 , RGND2 = 150 Ω or a single resistor RGND = 75 Ω for reverse battery protection up to the max. operating voltage.

Semiconductor Group Page 8 1999-Mar-23 Input circuit (ESD protection), IN1 or IN2 IN GND IR ESD-ZD III The use of ESD zener diodes as voltage clamp at DC conditions is not recommended. Status output, ST1 or ST2 ST GND ESD- ZD +5V R ST(ON) ESD-Zener diode: 6.1 V typ., max 5.0 mA; RST(ON) < 375 Ω at 1.6 mA. The use of ESD zener diodes as voltage clamp at DC conditions is not recommended. Inductive and overvoltage output clamp, OUT1 or OUT2 +Vbb OUT VZ V ON Power GND VON clamped to VON(CL) = 47 V typ. Overvolt. and reverse batt. protection + Vbb IN ST STR GND GNDR Signal GND Logic PROFET V Z2 IR V Z1 Load GND LoadR OUT STR + 5V VZ1 = 6.1 V typ., VZ2 = 47 V typ., R GND = 150 Ω , R ST = 15 kΩ , R I= 3.5 kΩ typ. In case of reverse battery the load current has to be limited by the load. Temperature protection is not active Open-load detection OUT1 or OUT2 ON-state diagnostic Open load, if VON < RON ·IL(OL); IN high Open load detection Logic unit + Vbb OUT ON VON GND disconnect PROFET V IN ST OUT GND bb V bb VIN VST VGND Any kind of load. In case of IN = high is VOUT ≈ VIN - VIN(T+). Due to VGND > 0, no VST = low signal available.

Semiconductor Group Page 9 1999-Mar-23 GND disconnect with GND pull up PROFET V IN ST OUT GND bb Vbb VGND VINVST Any kind of load. If VGND > VIN - VIN(T+) device stays off Due to VGND > 0, no VST = low signal available. Vbb disconnect with energized inductive load PROFET V IN ST OUT GND bb Vbb high For inductive load currents up to the limits defined by ZL (max. ratings and diagram on page 9) each switch is protected against loss of Vbb. Consider at your PCB layout that in the case of Vbb dis- connection with energized inductive load all the load current flows through the GND connection. Inductive load switch-off energy dissipation PROFET V IN ST OUT GND bb E E E E AS bb L R ELoad R L L {LZ Energy stored in load inductance: EL = 1/2·L·I2 L While demagnetizing load inductance, the energy dissipated in PROFET is EAS = Ebb + EL - ER = ∫ VON(CL)·iL(t) dt, with an approximate solution for RL > 0 Ω : EAS = IL· L 2·R L (Vbb + |VOUT(CL)|) ln (1+ IL·R L |VOUT(CL)| ) Maximum allowable load inductance for a single switch off (one channel)4) L = f (IL ); Tj,start = 150°C, Vbb = 12 V, RL = 0 Ω ZL [mH] 100 1000 23456789 1 0 1 1 1 2 IL [A]

Semiconductor Group Page 10 1999-Mar-23 Typ. on-state resistance R ON = f (Vbb,Tj ); IL = 2 A, IN = high R ON [mOhm] 125 100 3 5 7 9 30 40 Tj = 150°C 25°C -40°C Vbb [V] Typ. standby current Ibb(off) = f (Tj ); Vbb = 9...34 V, IN1,2 = low Ibb(off) [µA] -50 0 50 100 150 200 Tj [°C]

Semiconductor Group Page 13 1999-Mar-23 Figure 5b: Open load: turn on/off to open load IN ST L t I td(STOL4)

Semiconductor Group Page 14 1999-Mar-23 Package and Ordering Code Standard: P-DSO-20-9 Sales Code BTS 728 L2 Ordering Code Q67060-S7014-A2 All dimensions in millimetres Definition of soldering point with temperature Ts: upper side of solder edge of device pin 15. Pin 15 Printed circuit board (FR4, 1.5mm thick, one layer 70µm, 6cm2 active heatsink area) as a reference for max. power dissipation Ptot, nominal load current IL(NOM) and thermal resistance Rthja Published by Siemens AG, Bereich Bauelemente, Vertrieb, Produkt-Information, Balanstraße 73, D-81541 München  Siemens AG 1999. All Rights Reserved As far as patents or other rights of third parties are concerned, liability is only assumed for components per se, not for applications, processes and circuits implemented within components or assem- blies. The information describes a type of component and shall not be considered as warranted characteristics. The characteristics for which SIEMENS grants a warranty will only be specified in the purchase contract. Terms of delivery and rights to change design reserved. For questions on technology, delivery and prices please contact the Offices of Semiconductor Group in Germany or the Siemens Companies and Representatives woldwide (see address list). Due to technical requirements components may contain dan- gerous substances. For information on the type in question please contact your nearest Siemens Office, Semiconductor Group. Siemens AG is an approved CECC manufacturer. Packing: Please use the recycling operators known to you. We can also help you - get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is re- turned to us unsorted or which we are not obliged to accept we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorised for such purpose! Critical components14 ) of the Semiconductor Group of Siemens AG, may only be used in life supporting devices or systems15) with the express written approval of the Semiconductor Group of Siemens AG. 14) A critical component is a component used in a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 15) Life support devices or systems are intended (a) to be implanted in the human body or (b) support and/or maintain and sustain and/or protect human life. If they fail, it is reasonably to assume that the health of the user or other persons may be endangered.