BTS721L1

BTS721L1_10 INFINEON | Alldatasheet

Document overview

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Technical content

Rev. 1.3, 2010-03-16 Smart High-Side Power Switch Smart High-Side Power Switch PROFET BTS721L1

Data Sheet 2 Rev. 1.3, 2010-03-16 Smart High-Side Power Switch BTS721L1 Smart Four Channel Highside Power Switch

Features

• Overload protection
• Current limitation
• Short-circuit protection
• Thermal shutdown
• Overvoltage protection (including load dump)
• Fast demagnetization of inductive loads
• Reverse battery protection1)
• Undervoltage and overvoltage shutdown with auto-restart and hysteresis/g3
• Open drain diagnostic output
• Open load detection in ON-state
• CMOS compatible input
• Loss of ground and loss of Vbb protection
• Electrostatic discharge (ESD) protection Application
• µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads
• All types of resistive, inductive and capacitive loads
• Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions. Pin Definitions and Functions Pin Symbol Function 1,10, 11,12, 15,16, 19,20 V bb Positive power supply voltage. Design the wiring for the simultaneous max. short circuit currents from channel 1 to 4 and also for low thermal resistance 3 IN1 Input 1 .. 4, activates channel 1 .. 4 in case of

5 IN2 logic high signal

7 IN3

9 IN4

18 OUT1 Output 1 .. 4, protected high-side power output 17 OUT2 of channel 1 .. 4. Design the wiring for the 14 OUT3 max. short circuit current

13 OUT4

4 ST1/2 Diagnostic feedback 1/2 of channel 1 and

channel 2, open drain, low on failure

8 ST3/4 Diagnostic feedback 3/4 of channel 3 and

channel 4, open drain, low on failure

2 GND1/2 Ground 1/2 of chip 1 (channel 1 and channel 2)

6 GND3/4 Ground 3/4 of chip 2 (channel 3 and channel 4)

1) With external current limit (e.g. resistor R GND=150 Ω) in GND connection, resistor in series with ST connection, reverse load current limited by connected load. Product Summary Overvoltage Protection V bb(AZ) 43 V Operating voltage Vbb(on) 5.0 ... 34 V active channels: one two parallel four parallel On-state resistance RON 100 50 25 mΩ Nominal load current /g44/g47/g11/g49/g50/g48/g122.9 4.3 6.3 A Current limitation /g44/g47/g11/g54/g38/g85/g12/g3 8 8 8 A Pin configuration (top view) Vbb 1 • 20 V bb GND1/2 2 19 V bb IN1 3 18 OUT1 ST1/2 4 17 OUT2 IN2 5 16 V bb GND3/4 6 15 V bb IN3 7 14 OUT3 ST3/4 8 13 OUT4 IN4 9 12 V bb Vbb 10 11 V bb P-DSO-20 PG-DSO20

Data Sheet 3 Rev. 1.3, 2010-03-16 Smart High-Side Power Switch BTS721L1 Block diagram Four Channels; Open Load detection in on state; /g14/g3/g57/g69/g69 /g44/g49/g20 /g54/g55/g20/g18/g21 /g40/g54/g39 /g50/g56/g55/g20 /g47/g82/g74/g76/g70 /g57/g82/g79/g87/g68/g74/g72 /g86/g72/g81/g86/g82/g85 /g57/g82/g79/g87/g68/g74/g72 /g86/g82/g88/g85/g70/g72 /g50/g83/g72/g81/g3/g79/g82/g68/g71 /g71/g72/g87/g72/g70/g87/g76/g82/g81/g3/g20 /g54/g75/g82/g85/g87/g3/g87/g82/g3/g57/g69/g69 /g47/g72/g89/g72/g79/g3/g86/g75/g76/g73/g87/g72/g85 /g55/g72/g80/g83/g72/g85/g68/g87/g88/g85/g72 /g86/g72/g81/g86/g82/g85/g3/g20 /g53/g72/g70/g87/g76/g73/g76/g72/g85/g3/g20 /g47/g76/g80/g76/g87/g3/g73/g82/g85 /g88/g81/g70/g79/g68/g80/g83/g72/g71 /g76/g81/g71/g17/g3/g79/g82/g68/g71/g86/g3/g20 /g42/g68/g87/g72/g3/g20 /g83/g85/g82/g87/g72/g70/g87/g76/g82/g81 /g38/g88/g85/g85/g72/g81/g87 /g79/g76/g80/g76/g87/g3/g20 /g22 /g23 /g57/g47/g82/g74/g76/g70 /g50/g89/g72/g85/g89/g82/g79/g87/g68/g74/g72 /g83/g85/g82/g87/g72/g70/g87/g76/g82/g81 /g50/g56/g55/g21 /g50/g83/g72/g81/g3/g79/g82/g68/g71 /g71/g72/g87/g72/g70/g87/g76/g82/g81/g3/g21 /g54/g75/g82/g85/g87/g3/g87/g82/g3/g57/g69/g69 /g47/g72/g89/g72/g79/g3/g86/g75/g76/g73/g87/g72/g85 /g55/g72/g80/g83/g72/g85/g68/g87/g88/g85/g72 /g86/g72/g81/g86/g82/g85/g3/g21 /g53/g72/g70/g87/g76/g73/g76/g72/g85/g3/g21 /g47/g76/g80/g76/g87/g3/g73/g82/g85 /g88/g81/g70/g79/g68/g80/g83/g72/g71 /g76/g81/g71/g17/g3/g79/g82/g68/g71/g86/g3/g21 /g42/g68/g87/g72/g3/g21 /g83/g85/g82/g87/g72/g70/g87/g76/g82/g81 /g38/g88/g85/g85/g72/g81/g87 /g79/g76/g80/g76/g87/g3/g21 /g44/g49/g21/g24 /g42/g49/g39/g20/g18/g21 /g53/g53/g50/g20 /g50/g21 /g38/g75/g68/g85/g74/g72 /g83/g88/g80/g83/g3/g20 /g38/g75/g68/g85/g74/g72 /g83/g88/g80/g83/g3/g21 /g38/g75/g68/g81/g81/g72/g79/g3/g21 /g38/g75/g68/g81/g81/g72/g79/g3/g20 /g54/g76/g74/g81/g68/g79/g3/g42/g49/g39 /g42/g49/g39/g20/g18/g21/g21 /g38/g75/g76/g83/g3/g20/g38/g75/g76/g83/g3/g20 /g14/g3/g57/g69/g69 /g44/g49/g22 /g54/g55/g22/g18/g23 /g50/g56/g55/g22 /g26 /g27 /g50/g56/g55/g23 /g44/g49/g23/g28 /g42/g49/g39/g22/g18/g23 /g53/g53/g50/g22 /g50/g23 /g38/g75/g68/g81/g81/g72/g79/g3/g23 /g38/g75/g68/g81/g81/g72/g79/g3/g22 /g47/g72/g68/g71/g73/g85/g68/g80/g72/g3/g70/g82/g81/g81/g72/g70/g87/g72/g71/g3/g87/g82/g3/g83/g76/g81/g3/g20/g15/g3/g20/g19/g15/g3/g20/g20/g15/g3/g20/g21/g15/g3/g20/g24/g15/g3/g20/g25/g15/g3/g20/g28/g15/g3/g21/g19 /g47/g72/g68/g71/g73/g85/g68/g80/g72 /g20/g27 /g20/g26 /g47/g82/g68/g71/g3/g42/g49/g39 /g47/g82/g68/g71 /g47/g72/g68/g71/g73/g85/g68/g80/g72 /g20/g23 /g20/g22 /g47/g82/g68/g71/g3/g42/g49/g39 /g47/g82/g68/g71 /g54/g76/g74/g81/g68/g79/g3/g42/g49/g39 /g42/g49/g39/g22/g18/g23/g25 /g38/g75/g76/g83/g3/g21/g38/g75/g76/g83/g3/g21 /g47/g82/g74/g76/g70/g3/g68/g81/g71/g3/g83/g85/g82/g87/g72/g70/g87/g76/g82/g81/g3/g70/g76/g85/g70/g88/g76/g87/g3/g82/g73/g3/g70/g75/g76/g83/g3/g21 /g11/g72/g84/g88/g76/g89/g68/g79/g72/g81/g87/g3/g87/g82/g3/g70/g75/g76/g83/g3/g20/g12

Data Sheet 4 Rev. 1.3, 2010-03-16 Smart High-Side Power Switch BTS721L1 Maximum Ratings at Tj = 25°C unless otherwise specified Parameter Symbol Values Unit Supply voltage (overvoltage protection see page 4) Vbb 43 V Supply voltage for full short circuit protection Tj,start =-40 ...+150°C Vbb 34 V Load current (Short-circuit current, see page 5) IL self-limited A Load dump protection2) VLoadDump = UA + Vs, UA = 13.5 V RI3) = 2 Ω, td = 200 ms; IN = low or high, each channel loaded with RL = 4.7Ω, VLoad dump4) 60 V Operating temperature range Storage temperature range Tj Tstg -40 ...+150 -55 ...+150 Power dissipation (DC)5 Ta = 25°C: (all channels active) Ta = 85°C: Ptot 3.7 1.9 W Inductive load switch-off energy dissipation, single pulse Vbb = 12V, Tj,start = 150°C5), IL = 2.9 A, ZL = 58 mH, 0Ω one channel: IL = 4.3 A, ZL = 58 mH, 0Ω two parallel channels: IL = 6.3 A, ZL = 58 mH, 0Ω four parallel channels: see diagrams on page 9 and page 10 EAS 0.3 0.65 1.5 J Electrostatic discharge capability (ESD) (Human Body Model) VESD 1.0 kV Input voltage (DC) VIN -10 ... +16 V Current through input pin (DC) Current through status pin (DC) see internal circuit diagram page 8 IIN IST ±2.0 ±5.0 mA Thermal resistance junction - soldering point 5),6) each channel: Rthjs 15 K/W junction - ambient5) one channel active: all channels active: Rthja 41 2) Supply voltages higher than V bb(AZ) require an external current limit for the GND and status pins, e.g. with a 150 Ω resistor in the GND connection and a 15 kΩ resistor in series with the status pin. A resistor for input protection is integrated. 3) RI = internal resistance of the load dump test pulse generator 4) VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 5) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70µm thick) copper area for Vbb connection. PCB is vertical without blown air. See page 15 6) Soldering point: upper side of solder edge of device pin 15. See page 15

Data Sheet 5 Rev. 1.3, 2010-03-16 Smart High-Side Power Switch BTS721L1

Electrical Characteristics

Parameter and Conditions, each of the four channels Symbol Values Unit at Tj = 25 °C, Vbb = 12 V unless otherwise specified min typ max Load Switching Capabilities and Characteristics On-state resistance (Vbb to OUT) IL = 2 A each channel, Tj = 25°C: Tj = 150°C: two parallel channels, Tj = 25°C: four parallel channels, Tj = 25°C: RON -- 85 170 100 200 mΩ Nominal load current one channel active: two parallel channels active: four parallel channels active: Device on PCB5), Ta = 85°C, Tj ≤ 150°C IL(NOM) 2.5 3.8 5.9 2.9 4.3 6.3 -- A Output current while GND disconnected or pulled up; Vbb = 30 V, VIN = 0, see diagram page 9 IL(GNDhigh) -- -- 10 mA Turn-on time to 90% VOUT: Turn-off time to 10% VOUT: ton toff 200 200 400 400 µs Slew rate on 10 to 30% VOUT, RL =1 2Ω, Tj =-40...+150°C: dV/dton 0.1 -- 1 V/ µs Slew rate off 70 to 40% VOUT, RL =1 2Ω, Tj =-40...+150°C: -dV/dtoff 0.1 -- 1 V/ µs Operating Parameters Operating voltage7) Tj =-40...+150°C: Vbb(on) 5.0 -- 34 V Undervoltage restart Tj =-40...+25°C: Tj =+150°C: Vbb(u rst) -- -- 5.0 7.0 V Undervoltage restart of charge pump see diagram page 14 Tj =-40...+150°C: Vbb(ucp) -- 5.6 7.0 V Undervoltage hysteresis ∆Vbb(under) = Vbb(u rst) - Vbb(under) ∆Vbb(under) -- 0.2 -- V Overvoltage shutdown Tj =-40...+150°C: Vbb(over) 34 -- 43 V Overvoltage restart Tj =-40...+150°C: Vbb(o rst) 33 -- -- V Overvoltage hysteresis Tj =-40...+150°C: ∆Vbb(over) -- 0.5 -- V Overvoltage protection8) Tj =-40...+150°C: Ibb = 40 mA Vbb(AZ) 42 47 -- V Standby current, all channels off Tj =25°C: VIN =0 T j =150°C: Ibb(off) -- µA 7) At supply voltage increase up to Vbb = 5.6 V typ without charge pump, VOUT ≈Vbb - 2 V 8) see also VON(CL) in circuit diagram on page 8.

Data Sheet 6 Rev. 1.3, 2010-03-16 Smart High-Side Power Switch BTS721L1 /g3 Parameter and Conditions, each of the four channels Symbol Values Unit at Tj = 25 °C, Vbb = 12 V unless otherwise specified min typ max Leakage output current (included in Ibb(off)) VIN =0 IL(off) -- -- 12 µA Operating current 9), VIN = 5V, Tj =-40...+150°C IGND = IGND1/2 + IGND3/4, one channel on: four channels on: IGND -- mA Protection Functions10) Initial peak short circuit current limit, (see timing diagrams, page 13) each channel, Tj =-40°C: Tj =25°C: Tj =+150°C: IL(SCp) 11 A two parallel channels twice the current of one channel four parallel channels four times the current of one channel Repetitive short circuit current limit, Tj = Tjt each channel two parallel channels four parallel channels (see timing diagrams, page 13) IL(SCr) -- A Initial short circuit shutdown time Tj,start =-40°C: Tj,start = 25°C: (see page 12 and timing diagrams on page 13) toff(SC) -- ms Output clamp (inductive load switch off)11) at VON(CL) = Vbb - VOUT VON(CL) -- 47 -- V Thermal overload trip temperature Tjt 150 -- -- °C Thermal hysteresis ∆Tjt -- 10 -- K Reverse Battery Reverse battery voltage 12) - Vbb -- -- 32 V Drain-source diode voltage (Vout > Vbb) IL = - 2.9 A,Tj = +150°C -VON -- 610 -- mV 9) Add IST, if IST > 0 10) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. 11) If channels are connected in parallel, output clamp is usually accomplished by the channel with the lowest V ON(CL) 12) Requires a 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature protection is not active during reverse current operation! Input and Status currents have to be limited (see max. ratings page 3 and circuit page 8).

Data Sheet 7 Rev. 1.3, 2010-03-16 Smart High-Side Power Switch BTS721L1 /g3 Parameter and Conditions, each of the four channels Symbol Values Unit at Tj = 25 °C, Vbb = 12 V unless otherwise specified min typ max Diagnostic Characteristics Open load detection current, (on-condition) each channel, Tj = -40°C: Tj = 25°C: Tj = 150°C: I L (OL)1 20 400 300 300 mA two parallel channels twice the current of one channel four parallel channels four times the current of one channel Open load detection voltage13) Tj =-40..+150°C: VOUT(OL) 2 3 4 V Internal output pull down (OUT to GND), VOUT =5V Tj =-40..+150°C: RO 41 03 0 k Ω Input and Status Feedback14) Input resistance (see circuit page 8) Tj =-40..+150°C: RI 2.5 3.5 6 k Ω Input turn-on threshold voltage Tj =-40..+150°C: VIN(T+) 1.7 -- 3.5 V Input turn-off threshold voltage Tj =-40..+150°C: VIN(T-) 1.5 -- -- V Input threshold hysteresis ∆ VIN(T) -- 0.5 -- V Off state input current VIN = 0.4 V: Tj =-40..+150°C: IIN(off) 1 -- 50 µA On state input current VIN = 5 V: Tj =-40..+150°C: IIN(on) 20 50 90 µA Delay time for status with open load after switch off (other channel in off state) (see timing diagrams, page 14), Tj =-40..+150°C: td(ST OL4) 100 320 800 µs Delay time for status with open load after switch off (other channel in on state) (see timing diagrams, page 14), Tj =-40..+150°C: td(ST OL5) -- 5 20 µs Status invalid after positive input slope (open load) Tj =-40..+150°C: td(ST) -- 200 600 µs Status output (open drain) Zener limit voltage Tj =-40...+150°C, IST = +1.6 mA: ST low voltage Tj =-40...+25°C, IST = +1.6 mA: T j = +150°C, IST = +1.6 mA: VST(high) VST(low) 5.4 6.1 0.4 0.6 V 13) External pull up resistor required for open load detection in off state. 14) If ground resistors RGND are used, add the voltage drop across these resistors.

Data Sheet 8 Rev. 1.3, 2010-03-16 Smart High-Side Power Switch BTS721L1 Truth Table Channel 1 and 2 Chip 1 IN1 IN2 OUT1 OUT2 ST1/2 Channel 3 and 4 (equivalent to channel 1 and 2) Chip 2 IN3 IN4 OUT3 OUT4 ST3/4 BTS 721L1 Normal operation L L H H L H L H L L H H L H L H H H H H Open load Channel 1 (3) L L H L H X Z Z H L H X H(L 15)) H L Channel 2 (4) L H X L L H L H X Z Z H H(L 15)) H L Short circuit to Vbb Channel 1 (3) L L H L H X H H H L H X L 16) H H(L17)) Channel 2 (4) L H X L L H L H X H H H L 16) H H(L17)) Overtemperature both channel L X H L H X L L L L L L H L L Channel 1 (3) L H X X L L X X H L Channel 2 (4) X X L H X X L L H L Undervoltage/ Overvoltage X X L L H L = "Low" Level X = don't care Z = high impedance, potential depends on external circuit H = "High" Level Status signal valid after the time delay shown in the timing diagrams Parallel switching of channel 1 and 2 (also channel 3 and 4) is easily possible by connecting the inputs and outputs in parallel (see truth table). If switching channel 1 to 4 in parallel, the status outputs ST1/2 and ST3/4 have to be configured as a 'Wired OR' function with a single pull-up resistor. Terms /g51/g53/g50/g41/g40/g55/g44/g49/g21 /g54/g55/g20/g18/g21 /g50/g56/g55/g21 /g42/g49/g39/g20/g18/g21 /g57/g69/g69 /g57/g50/g56/g55/g21/g44/g42/g49/g39/g20/g18/g21 /g57/g50/g49/g21 /g20/g27 /g21 /g47/g72/g68/g71/g73/g85/g68/g80/g72 /g22 /g23 /g44/g49/g20 /g57/g50/g56/g55/g20 /g57/g50/g49/g20 /g44/g47/g20 /g50/g56/g55/g20 /g24 /g20/g26 /g57/g44/g49/g20/g57/g44/g49/g21/g57/g54/g55/g20/g18/g21 /g44/g69/g69 /g44/g44/g49/g20 /g44/g44/g49/g21 /g44/g54/g55/g20/g18/g21 /g44/g47/g21 /g53/g42/g49/g39/g20/g18/g21 /g57/g69/g69 /g38/g75/g76/g83/g3/g20 /g51/g53/g50/g41/g40/g55/g44/g49/g23 /g54/g55/g22/g18/g23 /g50/g56/g55/g23 /g42/g49/g39/g22/g18/g23 /g57/g69/g69 /g57/g50/g56/g55/g23/g44/g42/g49/g39/g22/g18/g23 /g57/g50/g49/g23 /g20/g23 /g25 /g47/g72/g68/g71/g73/g85/g68/g80/g72 /g26 /g27 /g44/g49/g22 /g57/g50/g56/g55/g22 /g57/g50/g49/g22 /g44/g47/g22 /g50/g56/g55/g22 /g28 /g20/g22 /g57/g44/g49/g22/g57/g44/g49/g23/g57/g54/g55/g22/g18/g23 /g44/g44/g49/g22 /g44/g44/g49/g23 /g44/g54/g55/g22/g18/g23 /g44/g47/g23 /g53/g42/g49/g39/g22/g18/g23 /g38/g75/g76/g83/g3/g21 Leadframe (Vbb) is connected to pin 1,10,11,12,15,16,19,20 External RGND optional; two resistors RGND1/2 ,RGND3/4 = 150Ω or a single resistor RGND =7 5Ω for reverse battery protection up to the max. operating voltage. 15) With additional external pull up resistor 16) An external short of output to Vbb in the off state causes an internal current from output to ground. If RGND is used, an offset voltage at the GND and ST pins will occur and the VST low signal may be errorious. 17) Low resistance to Vbb may be detected by no-load-detection

Data Sheet 9 Rev. 1.3, 2010-03-16 Smart High-Side Power Switch BTS721L1 Input circuit (ESD protection), IN1...4 /g44/g49 /g42/g49/g39 /g44/g53 /g40/g54/g39/g16/g61/g39 /g44/g44/g44 ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V). Status output, ST1/2 or ST3/4 /g54/g55 /g42/g49/g39 /g40/g54/g39/g16 /g61/g39 /g14/g24/g57 /g53/g54/g55/g11/g50/g49/g12 ESD-Zener diode: 6.1 V typ., max 5.0 mA; RST(ON) < 380 Ω at 1.6 mA, ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may resul t in a drift of the zener voltage (increase of up to 1 V). Inductive and overvoltage output clamp, OUT1...4 /g14/g57/g69/g69 /g50/g56/g55 /g51/g53/g50/g41/g40/g55 /g57/g61 /g57/g50/g49 /g51/g82/g90/g72/g85/g3/g42/g49/g39 VON clamped to VON(CL) = 47 V typ. Overvoltage protection of logic part GND1/2 or GND3/4 /g14/g3/g57/g69/g69 /g44/g49 /g54/g55 /g54/g55/g53 /g42/g49/g39 /g42/g49/g39/g53 /g54/g76/g74/g81/g68/g79/g3/g42/g49/g39 /g47/g82/g74/g76/g70 /g57/g61/g21 /g44/g49 /g53/g44 /g57/g61/g20 RGND = 150 Ω Reverse battery protection /g42/g49/g39 /g47/g82/g74/g76/g70/g54/g55/g53 /g44/g49 /g54/g55 /g147/g3/g24/g57 /g50/g56/g55 /g47/g53 /g51/g82/g90/g72/g85/g3/g42/g49/g39 /g42/g49/g39/g53 /g54/g76/g74/g81/g68/g79/g3/g42/g49/g39 /g51/g82/g90/g72/g85 /g44/g81/g89/g72/g85/g86/g72 /g44/g53 /g57/g69/g69/g16 /g39/g76/g82/g71/g72 RGND = 150 Ω, RI = 3.5 kΩ typ, Temperature protection is not active during inverse current operation.

Data Sheet 10 Rev. 1.3, 2010-03-16 Smart High-Side Power Switch BTS721L1 Semiconductor Group 9 2003-Oct-01 Open-load detection, OUT1...4 ON-state diagnostic condition: VON < RON·IL(OL); IN high /g50/g83/g72/g81/g3/g79/g82/g68/g71 /g71/g72/g87/g72/g70/g87/g76/g82/g81 /g47/g82/g74/g76/g70 /g88/g81/g76/g87 /g14/g3/g57/g69/g69 /g50/g56/g55 /g50/g49 /g57/g50/g49 OFF-state diagnostic condition: VOUT > 3 V typ.; IN low /g50/g83/g72/g81/g3/g79/g82/g68/g71 /g71/g72/g87/g72/g70/g87/g76/g82/g81 /g47/g82/g74/g76/g70 /g88/g81/g76/g87 /g57/g50/g56/g55 /g54/g76/g74/g81/g68/g79/g3/g42/g49/g39 /g53/g40/g59/g55 /g53/g50 /g50/g41/g41 GND disconnect (channel 1/2 or 3/4) /g3 /g51/g53/g50/g41/g40/g55 /g57 /g44/g49/g21 /g54/g55 /g50/g56/g55/g21 /g42/g49/g39 /g69/g69 /g57/g69/g69 /g44/g69/g69 /g44/g49/g20 /g50/g56/g55/g20 /g57/g44/g49/g20/g57/g44/g49/g21/g57/g54/g55 /g57/g42/g49/g39 Any kind of load. In case of IN= high is VOUT ≈ VIN - VIN(T+). Due to VGND > 0, no VST = low signal available. GND disconnect with GND pull up (channel 1/2 or 3/4) /g51/g53/g50/g41/g40/g55 /g57 /g44/g49/g21 /g54/g55 /g50/g56/g55/g21 /g42/g49/g39 /g69/g69 /g57/g69/g69 /g44/g49/g20 /g50/g56/g55/g20/g57/g44/g49/g20 /g57/g44/g49/g21 /g57/g54/g55 /g57/g42/g49/g39 Any kind of load. If VGND > VIN - VIN(T+) device stays off Due to VGND > 0, no VST = low signal available. Vbb disconnect with energized inductive load /g51/g53/g50/g41/g40/g55 /g57 /g44/g49/g21 /g54/g55 /g50/g56/g55/g21 /g42/g49/g39 /g69/g69 /g57/g69/g69 /g44/g49/g20 /g50/g56/g55/g20/g75/g76/g74/g75 For an inductive load current up to the limit defined by E AS (max. ratings see page 3 and diagram on page 10) each switch is protected against loss of Vbb. Consider at your PCB layout that in the case of Vbb dis- connection with energized inductive load the whole load current flows through the GND connection.

Data Sheet 11 Rev. 1.3, 2010-03-16 Smart High-Side Power Switch BTS721L1 Inductive load switch-off energy dissipation /g51/g53/g50/g41/g40/g55 /g57/g44/g49 /g54/g55 /g50/g56/g55 /g42/g49/g39 /g69/g69 /g32 /g40 /g40 /g40 /g40/g36/g54 /g69/g69 /g47 /g53 /g40/g47/g82/g68/g71 /g53/g47 /g47 /g94/g47/g61 Energy stored in load inductance: EL = 1/2·L·I2 L While demagnetizing load inductance, the energy dissipated in PROFET is EAS= Ebb + EL - ER= VON(CL)·iL(t) dt, with an approximate solution for RL > 0 Ω: EAS= IL·L 2·RL (Vbb +| VOUT(CL)|) /g79/g81/g3(1+ IL·RL |VOUT(CL)| ) Maximum allowable load inductance for a single switch off (one channel)5) /g47/g3/g32/g3/g73/g3/g11/g44/g47/g3/g12/g30/g3Tj,start = 150°C, Vbb = 12 V, RL =0 Ω L [mH] /g20 /g20/g19 /g20/g19/g19 /g20/g19/g19/g19 /g20/g19/g19/g19/g19 /g20/g21/g22/g23/g24/g25/g26/g27 I L [A]

Data Sheet 12 Rev. 1.3, 2010-03-16 Smart High-Side Power Switch BTS721L1 Typ. on-state resistance ; IL = 2 A, IN = high RON [mOhm] Vbb [V] Typ. open load detection current IN = high IL(OL) ]Am[ Vbb [V] Typ. standby current Ibb(off) [µA] Tj [°C] Typ. initial short circuit shutdown time ; Vbb =12 V toff(S C) [msec] -40 -25 0 25 50 75 100 125 15 T j, start

Data Sheet 16 Rev. 1.3, 2010-03-16 Smart High-Side Power Switch BTS721L1 Package Outlines Figure 1 PG-DSO-20 (Plastic Dual Small Outline Package) (RoHS-compliant) Green Product (RoHS compliant) To meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pb- free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020). Please specify the package needed (e.g. green package) when placing an order 11 0 1120 Index Marking 1) Does not include plastic or metal protrusions of 0.15 max per side 2) Does not include dambar protrusion of 0.05 max per side GPS05094 2.65 max 0.1 0.2 -0.1 2.45 -0.2 +0.150.35 1.27 0.2 24x -0.27.6 1) 0.35 x 45˚ 0.238˚ max +0.09 +0.8 ±0.310.3 0.4 12.8-0.2 You can find all of our packages, sorts of packing and others in our Infineon Internet Page “Products”: http://www.infineon.com/products. Dimensions in mm

Data Sheet 17 Rev. 1.3, 2010-03-16 Smart High-Side Power Switch BTS721L1

Revision History

Rev. 1.3 2010-03-16 page 6: changed reference to the timing diagram Rev. 1.2 2009-07-21 page 1: added new coverpage page 6: Initial short circuit shutdown time changed: toff(SC) -40 °C to 15 ms toff(SC) 25 °C to 12 ms page 12: changed graphic V1.1 2007-08-30 Creation of the green datasheet. First page : Adding the green logo and the AEC qualified Adding the bullet AEC qualified and the RoHS compliant features Package page Modification of the package to be green.

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