BTS707 SIEMENS | Alldatasheet

Document overview

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  • PDF pages: 12

Technical content

Features

  • Overload protection
  • Current limitation
  • Short-circuit protection
  • Thermal shutdown
  • Overvoltage protection
  • Fast demagnetization of inductive loads
  • Reverse battery protection1)
  • Open drain diagnostic output
  • Open load detection in OFF-state
  • CMOS compatible input
  • Loss of ground and loss of Vbb protection
  • Electrostatic discharge (ESD ) protection Application
  • µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads
  • Most suitable for inductive loads
  • Replaces electromechanical relays, fuses and discrete circuits General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Fully protected by embedded protection functions. Pin Definitions and Functions Pin Symbol Function 1,10, 11,12, 15,16, 19,20 V bb Positive power supply voltage. Design the wiring for the simultaneous max. short circuit currents from channel 1 to 2 and also for low thermal resistance

3 IN1 Input 1,2, activates channel 1,2 in case of

7 IN2 logic high signal

17,18 OUT1 Output 1,2, protected high-side power output 13,14 OUT2 of channel 1,2. Design the wiring for the max. short circuit current

4 ST1 Diagnostic feedback 1,2 of channel 1,2,

8 ST2 open drain , low in on state on failure or high in

2 GND1 Ground 1 of chip 1 (channel 1)

6 GND2 Ground 2 of chip 2 (channel 2)

5,9 N.C. Not Connected 1) With external current limit (e.g. resistor RGND =150 Ω ) in GND connection, resistor in series with ST connection, reverse load current limited by connected load. Product Summary Overvoltage Protection Vbb(AZ) 65 V Operating voltage Vbb(on) 5.8 ... 58 V active channels: one two parallel On-state resistance R ON 250 125 m Ω Nominal load currentIL(NOM) 1.9 2.8 A Pin configuration (top view) Vbb 1 • 20 V bb GND1 2 19 V bb IN1 3 18 OUT1 ST1 4 17 OUT1 N.C. 5 16 V bb GND2 6 15 V bb IN2 7 14 OUT2 ST2 8 13 OUT2 N.C. 9 12 V bb Vbb 10 11 V bb

PROFET  Leadframe connected to pin 1, 10, 11, 12, 15, 16, 19, 20 Signal- GND2 Chip 2 Chip 2 + Vbb OUT1 Leadframe 17,18 Load GND Load + Vbb OUT2 Leadframe 13,14 Load GND Load Logic and protection circuit of chip 2 (equivalent to chip 1) Limit for ind. loads unclamped Short circuit detection GND GND Maximum Ratings at Tj = 25°C unless otherwise specified Parameter Symbol Values Unit Supply voltage (overvoltage protection see page 4)Vbb 65 V Supply voltage for full short circuit protection Tj,start = -40 ...+150°C Vbb 40 V Load current (Short-circuit current, see page 5)IL self-limited A Operating temperature range Storage temperature range Tj Tstg -40 ...+150 -55 ...+150

Maximum Ratings at Tj = 25°C unless otherwise specified Parameter Symbol Values Unit Semiconductor Group 3 Power dissipation (DC)2) Ta = 25°C: (all channels active) Ta = 85°C: Ptot 3 1.6 W Electrostatic discharge capability (ESD ) IN, ST: (Human Body Model) all other pins: VESD 1.0 tbd (>1.0) kV Input voltage (DC) VIN -0.5 ... +36 V Current through input pin (DC) Current through status pin (DC) see internal circuit diagram page 7 IIN IST ±2.0 ±5.0 mA Thermal Characteristics Parameter and Conditions S ymbol Values Unit min typ max Thermal resistance junction - soldering point2),3) each channel:R thjs -- -- 18 K/W junction - ambient2) one channel active: all channels active: R thja -- 2) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb connection. PCB is vertical without blown air. See page 12 3) Soldering point: upper side of solder edge of device pin 15. See page 12

Electrical Characteristics

Parameter and Conditions, each of the two channelsSymbol Values Unit at Tj = 25 °C, Vbb = 12 V unless otherwise specified min typ max Load Switching Capabilities and Characteristics On-state resistance (Vbb to OUT) IL = 2 A each channel, Tj = 25°C: Vbb = 24 V Tj = 150°C: two parallel channels, Tj = 25°C: R ON -- 225 400 113 250 500 125 m Ω Nominal load current one channel active: two parallel channels active: Device on PCB2), Ta = 85°C, Tj ≤ 150°C IL(NOM) 1.60 2.4 1.9 2.8 -- A Output current while GND disconnected or pulled up; Vbb = 32 V, VIN = 0, see diagram page 8 IL(GNDhigh) -- -- 1.1 mA

Parameter and Conditions, each of the two channelsSymbol Values Unit at Tj = 25 °C, Vbb = 12 V unless otherwise specified min typ max Semiconductor Group 4 Turn-on time to 90% VOUT : Turn-off time to 10% VOUT : ton toff µs Slew rate on 10 to 30% VOUT , R L = 12 Ω , Vbb = 20 V, Tj =-40...+150°C: dV/dton -- -- 6 V/ µs Slew rate off 70 to 40% VOUT , R L = 12 Ω , Vbb = 20 V, Tj =-40...+150°C: -dV/dtoff -- -- 7 V/ µs Operating Parameters Operating voltage4) Tj =-40...+150°C:Vbb(on) 5.8 -- 58 V Undervoltage restart Tj =-40...+150°C:Vbb(u rst) -- -- 4.9 V Undervoltage restart of charge pump see diagram page 11 Tj =-40...+150°C: Vbb(ucp) -- 5.6 7.5 V Undervoltage hysteresis ΔVbb(under) = Vbb(u rst) - Vbb(under) ΔVbb(under) -- 0.4 -- V Overvoltage protection5) Tj =-40...+150°C: I bb = 40 mA Vbb(AZ) 65 70 -- V Standby current, all channels off V IN = 0 Tj =150°C: Ibb(off) -- 20 70 µA Operating current 6), VIN = 5V, Tj =-40...+150°C IGND = IGND1 + IGND2 , one channel on: two channels on: IGND -- 2.2 4.4 mA Protection Functions Initial peak short circuit current limit, (see timing diagrams, page 9) each channel, Tj =-40°C: Tj =25°C: Tj =+150°C: IL(SCp) -- 4.0 A two parallel channels twice the current of one channel Output clamp (inductive load switch off)7) at VON(CL) = Vbb - VOUT VON(CL) 59 -- 75 V Thermal overload trip temperature Tjt 150 -- -- °C Thermal hysteresis ΔTjt -- 10 -- K 4) At supply voltage increase up to Vbb = 5.6 V typ without charge pump, VOUT ≈Vbb - 2 V 5) see also VON(CL) in circuit diagram on page 7. 6) Add IST , if IST > 0 7) If channels are connected in parallel, output clamp is usually accomplished by the channel with the lowest VON(CL)

Parameter and Conditions, each of the two channelsSymbol Values Unit at Tj = 25 °C, Vbb = 12 V unless otherwise specified min typ max Semiconductor Group 5 Reverse Battery Reverse battery voltage 8) -Vbb -- -- 32 V Diagnostic Characteristics Open load detection current IL(off) -- 6 -- µA Open load detection voltageTj =-40..+150°C:VOUT(OL) 2.4 3 4 V Short circuit detection voltage (pin 3 to 5) VON(SC) -- 2.5 -- V Input and Status Feedback9) Input resistance (see circuit page 7) R I -- 20 -- k Ω Input turn-on threshold voltage VIN(T+) 1 -- 2.5 V Input turn-off threshold voltage VIN(T-) 0.8 -- -- V Input threshold hysteresis Δ VIN(T) -- 0.5 -- V Off state input current VIN = 0.4 V:IIN(off) 1- - 3 0 µA On state input current VIN = 2.5 V:IIN(on) 10 25 70 µA Delay time for status with open load (see timing diagrams, page 10) td(ST OL3) -- 200 -- µs Status output (open drain) Zener limit voltageTj =-40...+150°C, IST = +1.6 mA: ST low voltage Tj =-40...+150°C, IST = +1.6 mA: VST(high) VST(low) 5.4 6.1 0.4 V 8) Requires a 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature protection is not active during reverse current operation! Input and Status currents have to be limited (see max. ratings page 3 and circuit page 7). 9) If ground resistors RGND are used, add the voltage drop across these resistors.

Channel 1 Input 1 Output 1 Status 1 Channel 2 Input 2 Output 2 Status 2 level level BTS 707 Normal operation L H L H L H Open load L H Z H H H Short circuit to GND L H L L L L Short circuit to V bb L H H H H H Overtem- perature L H L L L L Under- voltage L H L L L L Overvoltage no overvoltage shutdown, see normal operation Parallel switching of channel 1 and 2 is easily possible by connecting the inputs and outputs in parallel. The status outputs ST1 and ST2 have to be configured as a 'Wired OR' function with a single pull-up resistor. Terms PROFET IN1 ST1 OUT1 GND1 Vbb VST1V IN1 IIN1 Vbb IL1 VOUT1IGND1 VON1 Leadframe 17,18 Ibb IST1 R GND1 Chip 1 PROFET IN2 ST2 OUT2 GND2 Vbb V ST2V IN2 IIN2 IL2 VOUT2IGND2 VON2 Leadframe 13,14IST2 R GND2 Chip 2 Leadframe (Vbb) is connected to pin 1,10,11,12,15,16,19,20 External RGND optional; two resistors RGND1 , RGND2 = 150 Ω or a single resistor RGND = 75 Ω for reverse battery protection up to the max. operating voltage.

Input circuit (ESD protection), IN1 or IN2 IN GND IR ESD-ZD III ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V). Status output, ST1 or ST2 ST GND ESD- ZD +5V R ST(ON) ESD-Zener diode: 6.1 V typ., max 5.0 mA; RST(ON) < 0 Ω at 1.6 mA, ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V). Short Circuit detection Fault Signal at ST-Pin: VON > 2.5 V typ, no switch off by the PROFET itself, external switch off recommended! Short circuit detection Logic unit + Vbb OUT V ON Inductive and overvoltage output clamp, OUT1 or OUT2 +V bb OUT PROFET VZ V ON Power GND VON clamped to VON(CL) = -- V typ. Overvoltage protection of logic part GND1 or GND2 + Vbb IN ST STR GND GNDR Signal GND Logic PROFET V Z2 IR V Z1 VZ1 = 6.1 V typ., VZ2 = 70 V typ., RI = 20 kΩ typ., R GND = 150 Ω , RST = 15 kΩ nominal. Open-load detection, OUT1 or OUT2 OFF-state diagnostic condition: VOUT > 3 V typ.; IN low Open load detection Logic unit V OUT Signal GND IL(OL) OFF

V IN ST OUT GND bb Vbb VIN VST VGND Any kind of load. In case of IN = high is VOUT ≈ VIN - VIN(T+). Due to VGND > 0, no VST = low signal available. GND disconnect with GND pull up PROFET V IN ST OUT GND bb Vbb VGND V IN VST Any kind of load. If VGND > VIN - VIN(T+) device stays off Due to VGND > 0, no VST = low signal available. Vbb disconnect with energized inductive load PROFET V IN ST OUT GND bb Vbb high For an inductive load current up to the limit defined by EAS (max. ratings ) each switch is protected against loss of Vbb. Consider at your PCB layout that in the case of Vbb dis- connection with energized inductive load the whole load current flows through the GND connection. Inductive load switch-off energy dissipation PROFET V IN ST OUT GND bb E E E E AS bb L R ELoad R L L {LZ Energy stored in load inductance: EL = 1/2·L·I2 L While demagnetizing load inductance, the energy dissipated in PROFET is EAS = Ebb + EL - ER = ∫ VON(CL)·iL(t) dt, with an approximate solution for RL > 0 Ω : EAS = IL· L 2·R L (Vbb + |VOUT(CL)|) ln (1+ IL·R L |VOUT(CL)| )

Standard P-DSO-20-9 Ordering Code BTS 707 Q67060-S7010-A2 All dimensions in millimetres 1) Does not include plastic or metal protrusions of 0.15 max per side 2) Does not include dambar protrusion of 0.05 max per side Definition of soldering point with temperature Ts: upper side of solder edge of device pin 15. Pin 15 Printed circuit board (FR4, 1.5mm thick, one layer 70µm, 6cm2 active heatsink area) as a reference for max. power dissipation Ptot, nominal load current IL(NOM) and thermal resistance Rthja