BTS650P SIEMENS | Alldatasheet

Document overview

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Technical content

Features

  • Overload protection
  • Current limitation
  • Short circuit protection
  • Overtemperature protection
  • Overvoltage protection (including load dump)
  • Clamp of negative voltage at output
  • Fast deenergizing of inductive loads
  • Low ohmic inverse current operation
  • Reverse battery protection
  • Diagnostic feedback with load current sense
  • Open load detection via current sense
  • Loss of Vbb protection
  • Electrostatic discharge (ESD ) protection Application
  • Power switch with current sense diagnostic feedback for 12 V and 24 V DC grounded loads
  • Most suitable for loads with high inrush current like lamps and motors; all types of resistive and inductive loads
  • Replaces electromechanical relays, fuses and discrete circuits General Description N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load current sense, integrated in Smart SIPMOS chip on chip technology. Fully protected by embedded protection functions. IN Charge pump Level shifter Rectifier Limit for unclamped ind. loads Gate protection Current limit Overvoltage protection + Vbb PROFET  OUT 4 & Tab 1,2,6,7 Load GND Load Output Voltage detection R IS IS IIS IL V IS IIN Logic GND Voltage sensor Voltage source Current Sense LogicESD Temperature sensor R bb VIN ) With additional external diode. 2) Additional external diode required for energized inductive loads (see page 9). Product Summary Overvoltage protectionVbb(AZ) 62 V Output clamp VON (CL ) 42 V Operating voltage Vbb(on) 5.0 ... 34 V On-state resistance R ON 6.0 mΩ Load current (ISO) IL(ISO) 70 A Short circuit current limitation IL(SC) 130 A Current sense ratio IL : IIS 14 000 TO-220AB/7 Standard SMD

Semiconductor Group Page 2 1998-Nov.-2 Pin Symbol Function 1O U T O Output to the load. The pins 1,2,6 and 7 must be shorted with each other especially in high current applications! 2 OUT O Output to the load. The pins 1,2,6 and 7 must be shorted with each other especially in high current applications!3)

3 IN I Input, activates the power switch in case of short to ground

4V bb + Positive power supply voltage, the tab is electrically connected to this pin. In high current applications the tab should be used for the Vbb connection instead of this pin 4). 5I S S Diagnostic feedback providing a sense current proportional to the load current; zero current on failure (see Truth Table on page 7) 6O U T O Output to the load. The pins 1,2,6 and 7 must be shorted with each other especially in high current applications!3) 7O U T O Output to the load. The pins 1,2,6 and 7 must be shorted with each other especially in high current applications!3) Maximum Ratings at Tj = 25 °C unless otherwise specified Parameter Symbol Values Unit Supply voltage (overvoltage protection see page 4) Vbb 42 V Supply voltage for short circuit protection, Tj,start =-40 ...+150°C: (see diagram on page 10) Vbb 34 V Load current (short circuit current, see page 5)IL self-limited A Load dump protection VLoadDump = VA + Vs, VA = 13.5 V R I 5) = 2 Ω , R L = 0.54 Ω , td = 200 ms, IN, IS = open or grounded VLoad dump 6) 75 V Operating temperature range Storage temperature range Tj Tstg -40 ...+150 -55 ...+150 Power dissipation (DC), TC ≤ 25 °C Ptot 170 W Inductive load switch-off energy dissipation, single pulse Vbb = 12V, Tj,start = 150°C, TC = 150°C const., IL = 20 A, ZL = 7.5 mH, 0 Ω , see diagrams on page 10 EAS 1.5 J Electrostatic discharge capability (ESD) Human Body Model acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993, C = 100 pF, R = 1.5 kΩ VESD 4k V Current through input pin (DC) Current through current sense status pin (DC) see internal circuit diagrams on page 7 and 8 IIN IIS +15 , -250 +15 , -250 mA 3) Not shorting all outputs will considerably increase the on-state resistance, reduce the peak current capability and decrease the current sense accuracy 4) Otherwise add up to 0.7 mΩ (depending on used length of the pin) to the RON if the pin is used instead of the tab. 5) R I = internal resistance of the load dump test pulse generator. 6) VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839.

Semiconductor Group Page 3 1998-Nov.-2 Thermal Characteristics Parameter and Conditions Symbol Values Unit min typ max Thermal resistance chip - case : R thJC 7) -- -- 0.75 K/W junction - ambient (free air):R thJA -- 60 -- SMD version, device on PCB 8):3 3

Electrical Characteristics

Parameter and Conditions Symbol Values Unit at Tj = -40 ... +150 °C, Vbb = 12 V unless otherwise specified min typ max Load Switching Capabilities and Characteristics On-state resistance (Tab to pins 1,2,6,7, see measurement circuit page 7) IL = 20 A, Tj = 25 °C: VIN = 0, IL = 20 A, Tj = 150 °C: R ON -- 4.4 7.9 6.0 10.5 m Ω Vbb = 6V 9), IL = 20 A, Tj = 150 °C: R ON(Static) -- 10 17 Nominal load current 10) (Tab to pins 1,2,6,7) ISO 10483-1/6.7: VON = 0.5 V, Tc = 85 °C 11) IL(ISO) 55 70 -- A Nominal load current10), device on PCB8)) TA = 85 °C, Tj ≤ 150 °C VON ≤ 0.5 V, IL(NOM) 13.6 17 -- A Maximum load current in resistive range (Tab to pins 1,2,6,7) VON = 1.8 V, Tc = 25 °C: see diagram on page 13 VON = 1.8 V, Tc = 150 °C: IL(Max) 250 150 -- A Turn-on time 12) IIN to 90% VOUT : Turn-off time I IN to 10% VOUT : ton toff 100 420 110 µs Slew rate on 12) (10 to 30% VOUT ) R L = 1 Ω , TJ = 25 °C dV/dton -- 0.7 -- V/ µs Slew rate off 12) (70 to 40% VOUT ) R L = 1 Ω , TJ = 25 °C -dV/dtoff -- 1.1 -- V/ µs 8) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb connection. PCB is vertical without blown air. 9) Decrease of Vbb below 10 V causes slowly a dynamic increase of RON to a higher value of RON(Static). As long as VbIN > VbIN(u) max, RON increase is less than 10 % per second for TJ < 85 °C. 10) Not tested, specified by design. 11) TJ is about 105°C under these conditions. 12) See timing diagram on page 14.

Semiconductor Group Page 4 1998-Nov.-2 Inverse Load Current Operation On-state resistance (Pins 1,2,6,7 to pin 4) VbIN = 12 V, IL = - 20 A Tj = 25 °C: see diagram on page 10 Tj = 150 °C: R ON(inv) -- 4.4 7.9 6.0 10.5 m Ω Nominal inverse load current (Pins 1,2,6,7 to Tab) VON = -0.5 V, Tc = 85 °C11 IL(inv) 55 70 -- A Drain-source diode voltage (Vout > Vbb) IL = - 20 A, IIN = 0, Tj = +150°C -VON -- 0.6 -- V Operating Parameters Operating voltage (VIN = 0) 9, 13) Vbb(on) 5.0 -- 34 V Undervoltage shutdown 14) VbIN(u) 1.5 3.0 4.5 V Undervoltage start of charge pump see diagram page 15 VbIN(ucp) 3.0 4.5 6.0 V Overvoltage protection 15) Tj =-40°C: Ibb = 15 mA Tj = 25...+150°C: VbIN(Z) 60 V Standby current Tj =-40...+25°C: IIN = 0 Tj = 150°C: Ibb(off) -- µA 13) If the device is turned on before a Vbb-decrease, the operating voltage range is extended down to VbIN(u). For all voltages 0 ... 34 V the device is fully protected against overtemperature and short circuit. 14) VbIN = Vbb - VIN see diagram on page 7. When VbIN increases from less than VbIN(u) up to VbIN(ucp) = 5 V (typ.) the charge pump is not active and VOUT ≈Vbb - 3 V. 15) See also VON(CL) in circuit diagram on page 9.

Parameter and Conditions Symbol Values Unit at Tj = -40 ... +150 °C, Vbb = 12 V unless otherwise specified min typ max Semiconductor Group Page 5 1998-Nov.-2 Protection Functions Short circuit current limit (Tab to pins 1,2,6,7) VON = 12 V, time until shutdown max. 350 µs Tc =-40°C: Tc =25°C: Tc =+150°C: IL(SC) IL(SC) IL(SC) 110 130 115 180 A Short circuit shutdown delay after input current positive slope, VON > VON(SC) min. value valid only if input "off-signal" time exceeds 30 µs td(SC) 80 -- 350 µs Output clamp 16) IL= 40 mA: (inductive load switch off) see diagram Ind. and overvolt. output clamp page 8 -VOUT(CL) 14 16.5 20 V Output clamp (inductive load switch off) at VOUT = Vbb - VON(CL) (e.g. overvoltage) IL= 40 mA VON(CL) 39 42 47 V Short circuit shutdown detection voltage (pin 4 to pins 1,2,6,7) VON(SC) -- 6 -- V Thermal overload trip temperature Tjt 150 -- -- °C Thermal hysteresis ΔTjt -- 10 -- K Reverse Battery Reverse battery voltage On-state resistance (Pins 1,2,6,7 to pin 4)Tj = 25 °C: Vbb = -12V, VIN = 0, IL = - 20 A, R IS = 1 kΩ Tj = 150 °C: R ON(rev) -- 5.4 8.9 7.0 12.3 m Ω Integrated resistor in Vbb line R bb -- 120 -- Ω 16) This output clamp can be "switched off" by using an additional diode at the IS-Pin (see page 8). If the diode is used, VOUT is clamped to Vbb- VON(CL) at inductive load switch off. 17) The reverse load current through the intrinsic drain-source diode has to be limited by the connected load (as it is done with all polarity symmetric loads). Note that under off-conditions (IIN = IIS = 0) the power transistor is not activated. This results in raised power dissipation due to the higher voltage drop across the intrinsic drain-source diode. The temperature protection is not active during reverse current operation! Increasing reverse battery voltage capability is simply possible as described on page 9.

Parameter and Conditions Symbol Values Unit at Tj = -40 ... +150 °C, Vbb = 12 V unless otherwise specified min typ max Semiconductor Group Page 6 1998-Nov.-2 Diagnostic Characteristics Current sense ratio, IL = 90 A,Tj =-40°C: static on-condition, Tj =25°C: kILIS = IL : IIS, Tj =150°C: VON < 1.5 V VIS <VOUT - 5V, Tj =25°C: VbIN > 4.0 V Tj =150°C: see diagram on page 12 IL = 10 A,Tj =-40°C: Tj =25°C: Tj =150°C: IL = 4 A,Tj =-40°C: Tj =25°C: Tj =150°C: kILIS 12 500 12 500 11 500 12 500 12 000 11 500 12 500 11 500 11 500 11 000 11 000 11 200 14 200 13 700 13 000 14 500 14 000 13 400 15 000 14 300 13 500 18 000 15 400 14 000 16 000 16 000 14 500 17 500 16 500 15 000 19 000 17 500 15 500 28 500 22 000 19 000 IIS=0 by IIN =0 (e.g. during deenergizing of inductive loads): Sense current saturation IIS,lim 6.5 -- -- mA Current sense leakage current IIN = 0: VIN = 0, IL ≤ 0: IIS(LL) IIS(LH) 0.5 µA Current sense overvoltage protection Tj =-40°C: Ibb = 15 mA Tj = 25...+150°C: VbIS(Z) 60 V Current sense settling time 19) ts(IS) -- -- 500 µs Input Input and operating current (see diagram page 13) IN grounded (VIN = 0) IIN(on) -- 0.8 1.5 mA Input current for turn-off 20) IIN(off) -- -- 80 µA 18) If VON is higher, the sense current is no longer proportional to the load current due to sense current saturation, see IIS,lim . 19) Not tested, specified by design. 20) We recommend the resistance between IN and GND to be less than 0.5 kΩ for turn-on and more than 500kΩ for turn-off. Consider that when the device is switched off (IIN = 0) the voltage between IN and GND reaches almost Vbb.

Semiconductor Group Page 7 1998-Nov.-2 Truth Table Input current Output Current Sense Remark level level I IS Normal operation L H L H nominal =IL / kilis, up to IIS=IIS,lim Very high load current HH I IS, lim up to VON =V ON(Fold back) IIS no longer proportional to IL Current- limitation HH 0 VON > VON(Fold back) if VON >V ON(SC) , shutdown will occure Short circuit to GND L H L L Over- temperature L H L L Short circuit to V bb L H H H <nominal 21) Open load L H Z H Negative output voltage clamp LL 0 Inverse load current L H H H L = "Low" Level H = "High" Level Overtemperature reset by cooling: Tj < Tjt (see diagram on page 15) Short circuit to GND: Shutdown remains latched until next reset via input (see diagram on page 14) 21) Low ohmic short to Vbb may reduce the output current IL and can thus be detected via the sense current IIS. 22) Power Transistor "OFF", potential defined by external impedance. Terms PROFET V IN IS OUT bb VIN IIS IIN Vbb Ibb IL VOUT VON 1,2,6,7 R ISVIS VbIN RIN D S VbIS Two or more devices can easily be connected in parallel to increase load current capability. R ON measurement layout Sense V force Out Force bb contacts contacts (both out pins parallel) l ≤ 5.5mm Typical RON for SMD version is about 0.2 mΩ less than straight leads due to l ≈ 2 mm

Semiconductor Group Page 8 1998-Nov.-2 Input circuit (ESD protection) IN ZD INI V bb R bbV Z,IN V bIN V IN When the device is switched off (IIN = 0) the voltage between IN and GND reaches almost Vbb. Use a mechanical switch, a bipolar or MOS transistor with appropriate breakdown voltage as driver. VZ,IN = 66 V (typ). Short circuit detection Fault Condition: VON > VON(SC) (6 V typ.) and t> td(SC) (80 ...350 µs). Short circuit detection Logic unit + Vbb OUT VON Current sense status output IS ISR ISI ZD ISV bbV bbR Z,ISV VZ,IS = 66 V (typ.), R IS = 1 kΩ nominal (or 1 kΩ /n, if n devices are connected in parallel). IS = IL/kilis can be driven only by the internal circuit as long as Vout - VIS > 5 V. If you want measure load currents up to IL(M), RIS should be less than Vbb - 5 V IL(M) / Kilis Note: For large values of R IS the voltage VIS can reach almost Vbb. See also overvoltage protection. If you don't use the current sense output in your application, you can leave it open. Inductive and overvoltage output clamp + Vbb OUT PROFET VZ1 VON DS IS VOUT VZG VON is clamped to VON(Cl) = 42 V typ. At inductive load switch-off without DS, VOUT is clamped to VOUT(CL) = -19 V typ. via VZG . With DS, VOUT is clamped to Vbb - VON(CL) via VZ1. Using DS gives faster deenergizing of the inductive load, but higher peak power dissipation in the PROFET.

Semiconductor Group Page 9 1998-Nov.-2 Overvoltage protection of logic part + Vbb V OUT IN bbR Signal GND Logic PROFET V Z,IS R IS INR IS V Z,IN R V V Z,VIS R bb = 120 Ω typ., VZ,IN = VZ,IS = 66 V typ., R IS = 1 kΩ nominal. Note that when overvoltage exceeds 71 V typ. a voltage above 5V can occur between IS and GND, if R V, VZ,VIS are not used. Reverse battery protection Logic IS IN ISR VR OUT LR Power GNDSignal GND Vbb- Power TransistorINR bbR D SD R V ≥ 1 kΩ, R IS = 1 kΩ nominal. Add R IN for reverse battery protection in applications with Vbb above

16 V17); recommended value: 1

+ 1 R IS + 1 R V 0.1A |Vbb| - 12V if DS is not used (or 1 R IN = 0.1A |Vbb| - 12V if DS is used). To minimize power dissipation at reverse battery operation, the summarized current into the IN and IS pin should be about 120mA. The current can be provided by using a small signal diode D in parallel to the input switch, by using a MOSFET input switch or by proper adjusting the current through R IS and R V. Vbb disconnect with energized inductive load Provide a current path with load current capability by using a diode, a Z-diode, or a varistor. (VZL < 72 V or VZb < 30 V if RIN=0). For higher clamp voltages currents at IN and IS have to be limited to 250 mA. Version a: PROFET V IN OUT IS bb V bb V ZL Version b: PROFET V IN OUT IS bbV bb V Zb Note that there is no reverse battery protection when using a diode without additional Z-diode VZL, VZb. Version c: Sometimes a neccessary voltage clamp is given by non inductive loads RL connected to the same switch and eliminates the need of clamping circuit: PROFET V IN OUT IS bbV bb R L

Semiconductor Group Page 10 1998-Nov.-2 Inverse load current operation PROFET V IN OUT IS bb V bb V OUT - IL R IS V IS V IN - + IIS The device is specified for inverse load current operation (VOUT > Vbb > 0V). The current sense feature is not available during this kind of operation (IIS = 0). With IIN = 0 (e.g. input open) only the intrinsic drain source diode is conducting resulting in consi- derably increased power dissipation. If the device is switched on (V IN = 0), this power dissipation is decreased to the much lower value R ON(INV) * I2 (specifications see page 4). Note: Temperature protection during inverse load current operation is not possible! Inductive load switch-off energy dissipation PROFET V IN OUT IS bb E E E E AS bb L R ELoad L R L {Z L R IS IIN V bb i (t)L Energy stored in load inductance: EL = 1/2·L·I2 L While demagnetizing load inductance, the energy dissipated in PROFET is EAS = Ebb + EL - ER = ∫ VON(CL)·iL(t) dt, with an approximate solution for RL > 0 Ω : EAS = IL· L 2·R L (Vbb + |VOUT(CL) |) ln (1+ IL·R L |VOUT(CL) | ) Maximum allowable load inductance for a single switch off L = f (IL ); Tj,start = 150°C, Vbb = 12 V, RL = 0 Ω L [µH] IL [A] Externally adjustable current limit If the device is conducting, the sense current can be used to reduce the short circuit current and allow higher lead inductance (see diagram above). The device will be turned off, if the threshold voltage of T2 is reached by I S*RIS . After a delay time defined by R V*CV T1 will be reset. The device is turned on again, the short circuit current is defined by IL(SC) and the device is shut down after td(SC) with latch function. PROFET IS IN ISR VR Powe r GND Signal GND V bb OUT VC loadR T1 T2 IN Signal Vbb 100 1000 10000 100000 1000000

1 A 10 A 100 A 1000 A

Semiconductor Group Page 11 1998-Nov.-2 Options Overview Type BTS 550P 650P 555 Overtemperature protection with hysteresisXX Tj >150 °C, latch function 23) Tj >150 °C, with auto-restart on coolingX X Short circuit to GND protection switches off when VON >6 V typ. (when first turned on after approx. 180 µs) XX Overvoltage shutdown -- Output negative voltage transient limit to Vbb - VON(CL) XX to VOUT = -19 V typ X 24) X24) 23) Latch except when Vbb -VOUT < VON(SC) after shutdown. In most cases VOUT = 0 V after shutdown (VOUT ≠ 0 V only if forced externally). So the device remains latched unless Vbb < VON(SC) (see page 5). No latch between turn on and td(SC). 24) Can be "switched off" by using a diode DS (see page 8) or leaving open the current sense output.

Semiconductor Group Page 12 1998-Nov.-2 Characteristics Current sense versus load current: IIS = f(IL), TJ= -40 ... +150 °C IIS [mA] IL [A] Current sense ratio: KILIS = f(IL),TJ = -40°C kilis IL [A] Current sense ratio: IIS = f(IL), TJ= 25 °C kILIS IL [A] Current sense ratio: KILIS = f(IL),TJ = 150°C kilis IL [A] 10000 12000 14000 16000 18000 20000 22000 0 2 04 06 08 0 typ max min 10000 12000 14000 16000 18000 20000 22000 0 2 04 06 08 0 min typ max 0 2 04 06 08 0 max min 10000 12000 14000 16000 18000 20000 22000 24000 26000 28000 30000 0 2 04 06 08 0 typ min max

Semiconductor Group Page 13 1998-Nov.-2 Typ. current limitation characteristic IL = f (VON , Tj ) IL [A] VON [V] In case of VON > VON(SC) (typ. 6 V) the device will be switched off by internal short circuit detection. Typ. on-state resistance R ON = f (Vbb, Tj ); IL = 20 A; VIN = 0 R ON [mOhm] 0 5 10 15 static dynamic Tj = 150°C 85°C 25°C -40°C Vbb [V] Typ. input current IIN = f (VbIN), VbIN = Vbb - VIN IIN [mA] VbIN [V] 100 150 200 250 300 350 400 450 0 5 10 15 20 VON > VON(S C) o nly fo r t < td( S C) (other wi s e i mmedi ate s hutdown) T J = -40°C T J = 25°C T J = 150°C VON(F B ) 0.2 0.4 0.6 0.8 1.2 1.4 1.6 0 2 04 06 08 0

Semiconductor Group Page 16 1998-Nov.-2 Package and Ordering Code All dimensions in mm Standard TO-220AB/7 Ordering code BTS650P Q67060-S6308-A2 SMD TO 220AB/7, Opt. E3180 Ordering code BTS650P E3180A T&R: Q67060-S6308-A4 Footprint: 9.4 0.47 0.8 8.42 4.6 16.15 10.8 Published by Siemens AG, Bereich Halbleiter Vetrieb, Werbung, Balanstraße 73, D-81541 München  Siemens AG 1998. All Rights Reserved Attention please! As far as patents or other rights of third parties are concerned, liability is only assumed for components, not for applications, processes and circuits implemented within components or assemblies. The information describes a type of component and shall not be considered as warranted characteristics. Terms of delivery and rights to change design reserved. For questions on technology, delivery and prices please contact the Semiconductor Group Offices in Germany or the Siemens Companies and Representatives worldwide (see address list). Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Siemens Office, Semiconductor Group. Siemens AG is an approved CECC manufacturer. Packing: Please use the recycling operators known to you. We can also help you - get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorised for such purpose! Critical components 25) of the Semiconductor Group of Siemens AG, may only be used in life supporting devices or systems 26) with the express written approval of the Semiconductor Group of Siemens AG. 25) A critical component is a component used in a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 26) Life support devices or systems are intended (a) to be implanted in the human body or (b) support and/or maintain and sustain and/or protect human life. If they fail, it is reasonably to assume that the health of the user or other persons may be endangered.