BTS629

BTS629 SIEMENS | Alldatasheet

Document overview

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Technical content

Features

@ High-side switch @ Overtemperature protection REY 1 © Short circuit / Overload protection through pulse Qi ip ke width reduction an overtemperature shutdown Is ‘@ Load dump protection up to 93.5 V ') @ Undervoltage and overvoltage shutdown vresie7 with auto-restart and hysteresis @ Reverse battery protection *) @ Timing frequency adjustable © Controlled switching rise and fall times @ Minimized Radio Frequency Interferences (RFI) @ Maximum current intemally limited @ Protection against loss of signal GND @) @ Electrostatic discharge (ESD) protection @ Package: TO-220/7 and SMD, Pin 4 is shorted to the tab Note: Switching frequency is programmed with an external capacitor. To assist with accurate set- ting of this parameter the dimmer is factory selected into two groups (see page 8). For large quantity orders, customer will need to be prepared to accept deliveries of both groups. BTS 629 ©67078-S5501-A2 | TO-220/7 BTS 629A ©67078-S5501-A5 | TO-220/7 Maximum Ratings Parameter [Symbol] value [Unit Active overvoltage protection Veoina) | > 50 v Short-circuit current Isc self-limited - Operating temperature range T, - 40... +150 °c Storage temperature range Too -55...+ 150 Power dissipation, T; = 25°C Prot 75 w Thermal resistance K/W Chip - case Ric | $1.67 Chip - ambient Rina | S75 1) With 150 @ resistor in Signal GND connection 2) Potential between Signal GND and Load GND > 0.5 V Semiconductor Group 8-3

1 [ i ' 1 overvoltoge Over/Under | Temperature ' 1 | Protection ooecton | Sensor . 1 by, (4) i H ' * T i an ting | sf pose-wim | ge LP Pat Latta i! 1 | Generator Comporator tavitn TTp + aa aa Ld ' ] +i i | '

1 Regulator '

7 na Glo Vou (3) rs. cor out (7) | Bootstrop Load Timing LF Potentiometer Capacitor Capecitor| for PWM-Conirol Signal GND Load GND — so0i0s

Electrical Characteristics

at T, = 25 °C, unless otherwise specified. Parameter [ Symbol | Values | Unit On-state resistance (pin 4 to 7) Ron mQ 1=2A, Vy, =12V 160 Operating voltage (pin 4 to GND) Vow v Nominal current, calculated value (pin 4 to 7) | 1,-ISO A 1SO-proposal: Vey—Vou = 0.5 V, To = 85 °C 2.0 Load current, theoretical value (pin 4 to 7) 1,-MOS A MOS-standard: J; = 25 °C, T, = 150 °C Load current limit (pin 4 to 7) Taam 12 A Vow ~ Vou > 1V Undervoltage threshold (Pin 4 to GND) Vooitow 42 v R=6Q Overvoltage threshold (Pin 4 to GND) Voom | 17.0 17.8 | 186 | Vv R.=6Q _ » Note: undervoltage shutdown *! Note: overvoltage shutdown Semiconductor Group 8-4

at; = 25 'C, unless otherwise specified. Parameter "le ie Unit PWM reduction threshold Vie Vv (pin 4 to GND), R, = 6.2 126 13.9 14.1 Max. output voltage (RMS) Vewemax (pin 7 to GND), R. = 6.2 12.2 13.7 Reference voltage (pin 3 to pin 1) Vaer Vey = 12 V, Inge = 10 mA 25 3.0 Reference current (pin 3 to pin 1) mA Vip = 12 V, pin 3 to 1 short 150 Intemal current consumption during operation | J, (pin 4 to pin 1, measured in PWM gap) Vip = 12 V, R pin 3 to GND = 2.5 kQ Bootstrap voltage (pin 6 to pin 7) Ve v Vip = 12 V PWM frequency (pin 7 to GND) fous Hz BTS 629 C,= 47 nF BTS 629A C= 68nF Max. pulse duty factor Dinas % Vow = 12 V, R= 6 2, Vo = Vier (50% Vout) Min. pulse duty factor Dinin Vep = 12 V, R= 6.0, Vo = 0 (50% Vay) 14 Slew rate “on” dv/dtion) Vis Ven = 12 V, RL = 6 Q, 10...30% Vous Slew rate “off” dv/dtiom Ven = 12 V, RL = 6 O, 90...10% Vout 0.12 Slew rate “on” dilaton) Aus Vip = 12 V, R= 6 Q, 10...30% Laue Slew rate “off” dilaton Voy = 12 V, Ry = 6 Q, 90...10% lout Themaloverbadtiptempeature | ___|wo [= _'|- fe Semiconductor Group 8-5

Analog Logic-Input V- (2) Qk eo > Pulse-Width-Comporator ev GND G>T 2ma roo Triangular wave form Generator Input C, (5) Yow c > Timing Generator mox cND ma SPoOTOS, Voltage Sensor (typ) Undervoltage sensor Overvoltage sensor Yn Yoo sPo009s Semiconductor Group 8-6

Operating range (typ.) es as 0 40 17.5 56 —sPooos6 1: Undervoltage sensor causes the device to switch off 2: Normal operation 3: Overvoltage sensor causes the device to switch off (Timing Generator remains active) 4: Increase of current between Pin 4 and 1 from internal Zener diode to protect the circuit against overvoltage spikes Susceptibility to electrical interference Test pulse 5: Load dump to DIN 40839 part 1 (12 V supply voltage)* 7 , Test pulse | Susceptibility levels [ f with 150 Q : ¥ in GND-line | ' petepw hs fof lf 1 x xxl x]x/x oc . : 2 [x Tx RAESESESES Paramet 8: Vo = 50 VU 0 —— To arameters: Vs = evel 3a |x |x [x [x] x Vp = 13.5 V [x [x |x [x] x | x] x] fron tw10me 4 x|x]x]x}x|x|x]x {=0.1 to 10 ms 5 xy Ihgeal in 7H0GND) = 1-180 tse 9982) c -_ with 150 Q in GND-line: Class X: All functions of the device are per- Ve = 80 V (Level Ill) formed as designed after exposure Not i jote: to disturbance The condition are related to each other in Class Y: One or more functions of the device that the high setting values of Vs, Rand ts are not performed as designed after vauee Pecveryine is exposure and cannot be returned to proper operation without replacing the device DIN 40839: Electromagnetic compatibility (EMC) in motor vehicles; correlation with ISO-Technical Report 7637/0 and 7637/1 Semiconductor Group 8-7

Susceptibility to electrical interference to DIN 40839 part 1 (12 V supply voltage) Test Pulse 3a Test Pulse 3b y v owl AAI IPI 4 ° 7 Parameters Parameters Vs = -150V Vs = 100 V R,=50Q R,=509 ty =0.1 us t, = 0.1 us t=5ns t=5ns t, = 100 ps t, = 100 us t=10ms & = 10 ms ty =90 ms t, = 90 ms Test circuit Ibis_6294) 1 2 3 ES Li + ‘300087

1 Battery

2 Test pulse generator with integrate source resistance”

3 Disconnecting switch

4 Sample

5 Antinoise capacitor (220 nF)

• Schaffner PART NSG 500 C and 506 C Semiconductor Group 8-8

Applications

Dimming of dashboard lighting $ 2200 pq hy T hotinise 2.x [] ay, cND GOUT » 22a *) BTS 629 C,= 47 nF BTS 629A C, = 68 nF [Jrs00 (54) sipoo9e Resistor for reverse battery and load dump protection Maximum Brightness Your Fout ' ' Minimum Brightness reins Your A | Tal a fou H ' ay ‘ ' sipor00 Semiconductor Group 8-9

PWM Frequency characteristic PWM Frequency characteristic min./max. Values min./max. Values C= 47 nF Vip = 12 C, = 68 nF Vin = 12 Q, = 500/f=10 kHz C, = 22 nF @, = 500/f=10kHz Cy = 22 nF 208-4 ee 200 ——- —- Spanner phe pepe i | 128 pt HHH 125 | 7 75 = 75 ie 1 | | 1 i ~~ so}-+— FP 7 so}-—t te oH LL ne or op tt |} | L_ “50-25 0 25 50 75 100 °C 150 “56-280 25 50 75 100 °C 150 Semiconductor Group 8-10

Weight: 0.5 g Dimensions in mm 9.5402 ia fied +01, wwe Se 1328 E Hed 02-208 18.6102, 4 rr | 2 | wet a tr sats (i es 33i09 ty | EER eet — ross | (3I3 0.683; 24 = OB-a13 r 0.57018 LF) ol Soe0s B.4403 be 4x (2) = F8 corosie? ml i [2]a[alelee LLNSE Le reel Non) Te Semiconductor Group oi