BTS6123B

BTS6123B INFINEON | Alldatasheet

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Data Sheet, V1.0, December 2005 Never stop thinking. BTS 6123B Smart High-Side Power Switch PROFET One Channel, 10 m Ω Automotive Power

Smart High-Side Power Switch BTS 6123B Data Sheet 2 V1.0, 2005-12-15

Data Sheet 3 V1.0, 2005-12-15 Type Ordering Code Package BTS 6123B SP000092062 P-TO-220-7-180 Smart High-Side Power Switch PROFET BTS 6123B Product Summary The BTS 6123B is a one channel high-side power switch in P-TO-220-7-180 package providing embedded protective functions including ReverSave ™ . The power transistor is built by a N-channel vertical power MOSFET with charge pump. The design is based on Smart SIPMOS chip on chip technology. Basic Features

• Very low standby current  Current controlled input pin  Improved electromagnetic compatibility (EMC)  Fast demagnetization of inductive loads Operating voltage Vbb(on) 5 . 5. .2 4V Over-voltage protection VON(CL) 39 V On-State resistance RDS(ON) 10 mΩ Nominal load current IL(nom) 9A Load current (ISO) IL(ISO) 33 A Current limitation IL6(SC) 55 A Stand-by current for whole device with loadIbb(OFF) 6µ A P-TO-220-7-180

Smart High-Side Power Switch BTS 6123B Data Sheet 4 V1.0, 2005-12-15 Protective Functions R e v e r S a v e™ , channel switches on in case of reverse polarity  Reverse battery protection without external components  Short circuit protection with latch  Over-load protection  Multi-step current limitation  Thermal shutdown with restart  Over-voltage protection (including load dump)  Loss of ground protection  Loss of V bb protection (with external diode for charged inductive loads)  Electrostatic discharge protection (ESD) Diagnostic Functions  Proportional load current sense (with defined fault signal in case of overload operation, over temperature shutdown and/or short circuit shutdown)  Open load detection in ON-state by load current sense

Applications

 µC compatible high-side power switch with diagnostic feedback for 12 V grounded loads  All types of resistive, inductive and capacitive loads  Most suitable for loads with high inrush currents, so as lamps  Replaces electromechanical relays, fuses and discrete circuits

Smart High-Side Power Switch BTS 6123B Overview Data Sheet 5 V1.0, 2005-12-15 1O v e r v i e w The BTS 6123B is a one channel high-side power switch (10 mΩ ) in P-TO-220-7-180 power package providing embedded protective functions including ReverSaveTM . ReverSaveTM is a protection feature that causes the power transistors to switch on in case of reverse polarity. As a result, the power dissipation is reduced. The BTS 6123B has a current controlled input and offers a diagnostic feedback with load current sense. The design is based on Smart SIPMOS chip on chip technology.

1.1 Block Diagram

Overview .emf T driver logic gate control charge pump load current sense over temperature clamp for inductive load current limitation forward voltage drop detection voltage sensor IIS Rbb

Smart High-Side Power Switch BTS 6123B Overview Data Sheet 6 V1.0, 2005-12-15

1.2 Terms

Following figure shows all terms used in this data sheet. Figure 2 Terms Terms. emf VIN OUT VIS IIS Vbb IL VOU T Ibb IN VBB IS IIN VbIN VbIS VON RIN RIS BTS 6123B

Smart High-Side Power Switch BTS 6123B Pin Configuration Data Sheet 7 V1.0, 2005-12-15

2 Pin Configuration

2.1 Pin Assignment BTS 6123B

Figure 3 Pin Configuration P-TO-220-7-180

2.2 Pin Definitions and Functions

1O U TO Output; output to the load; pin 1, 2, 6 and 7 must be externally shorted.1) 1) Not shorting all outputs will considerably increase the on-state resistance, reduce the peak current capability, the clamping capability and decrease the current sense accuracy. 2O U TO Output; output to the load; pin 1, 2, 6 and 7 must be externally shorted.1) 3I N I Input; activates the power switch if shorted to ground. 4, Tab V bb - Supply Voltage; positive power supply voltage; tab and pin 4 are internally shorted. 5I S O Sense Output; Diagnostic feedback; provides at normal operation a sense current proportional to the load current; in case of overload, over temperature and/or short circuit a defined current is provided (see Table 1 "Truth Table" on Page 23). 6O U TO Output; output to the load; pin 1, 2, 6 and 7 must be externally shorted. 7O U TO Output; output to the load; pin 1, 2, 6 and 7 must be externally shorted.1) TO220-7 .emf Vbb OUT TAB OUT OUT OUT IN IS Vbb

Smart High-Side Power Switch BTS 6123B

Electrical Characteristics

Data Sheet 8 V1.0, 2005-12-15

3 Electrical Characteristics

3.1 Maximum Ratings

Stresses above the ones listed here may cause permanent damage to the device. Exposure to maximum rating conditions for extended periods may affect device reliability. Tj = 25°C (unless otherwise specified) Pos. Parameter Symbol Limit Values Unit Test Conditionsmin. max. Supply Voltage

3.1.1 Supply voltage Vbb -16 38 V -

3.1.2 Supply voltage for full short

circuit protection (single pulse) Vbb(SC) 02 4 V −

3.1.3 Supply Voltage for Load Dump

protection 2) Vbb(LD) -4 5 V RI = 2Ω RL = 1.5Ω Logic Pins

3.1.4 Voltage at input pin Vb,IN -16 63 V -

3.1.5 Current through input pin IIN -140 15 mA -

3.1.6 Voltage at current sense pinVb,IS -16 56 V -

3.1.7 Current through sense pin IIS -140 15 mA -

3.1.8 Input voltage slew rate 3) dVbIN/dt -20 20 V/µs-

3.1.9 Load current 4) IL - ILx(SC) A-

3.1.10 Maximum energy dissipation

(single pulse) EAS -0 . 3 J IL(0) = 20 A Tj(0) = 150°C

3.1.11 Total power dissipation (DC)

Ptot -6 5 W TC = 85 °C Tj ≤ 150 °C Temperatures

3.1.12 Junction temperature Tj -40 150 °C -

3.1.13 Storage temperature Tstg -55 150 °C -

Smart High-Side Power Switch BTS 6123B Data Sheet 9 V1.0, 2005-12-15 ESD Susceptibility

3.1.14 ESD susceptibility HBM VESD -3 3 kV according to

1) Short circuit is defined as a combination of remaining resistances and inductances. See Figure 13. 2) Load Dump is specified in ISO 7637, RI is the internal resistance of the Load Dump pulse generator 3) Slew rate limitation can be achieved by means of using a series resistor for the small signal driver or in series in the input path. A series resistor RIN in the input path is also required for reverse operation at Vbb≤-16V. See also Figure 14. 4) Current limitation is a protection feature. Operation in current limitation is considered as “outside” normal operating range. Protection features are not designed for continuous repetitive operation. Tj = 25°C (unless otherwise specified) Pos. Parameter Symbol Limit Values Unit Test Conditionsmin. max.

Smart High-Side Power Switch BTS 6123B Power Stages Data Sheet 10 V1.0, 2005-12-15

4 Block Description and Electrical Characteristics

4.1 Power Stages

The power stage is built by a N-channel vertical power MOSFET (DMOS) with charge pump.

4.1.1 Input Circuit

Figure 4 shows the input circuit of the BTS 6123B. The current source to Vbb ensures that the device switches off in case of open input pin. The zener diode protects the input circuit against ESD pulses. Figure 4 Input Circuit A high signal at the required external small signal transistor pulls the input pin to ground. A logic supply current IIN is flowing and the power DMOS switches on with a dedicated slope, which is optimized in terms of EMC emission. Figure 5 Switching a Load (resistive) IN Rbb I Vbb Input.emf VZ,IN VIN IIN VbIN VOU T t SwitchOn.emf t IIN 10% 25% 50% 90% tON tOFF dV/dtON dV/dtOFF

Smart High-Side Power Switch BTS 6123B Power Stages Data Sheet 11 V1.0, 2005-12-15

4.1.2 Output On-State Resistance

The on-state resistance RDS(ON) depends on the supply voltage as well as the junction temperature Tj. Figure 6 shows these dependencies for the typical on-state resistance. The on-state resistance in reverse polarity mode is described in Section 4.2.3. Figure 6 Typical On-State Resistance At small load currents the resistance is artificially increased to improve current sense accuracy. Therefore the forward voltage drop VON at small load currents is no more proportional to the load current IL , but is controlled by an internal “two level controller” to remain clamped to a defined value VON(NL). Figure 7 shows the dependency for a typical device. /g19 /g24 /g20/g19 /g20/g24 /g21/g19 /g19/g21/g23/g25/g27/g20 /g19 /g20 /g21 /g53/g50/g49 /g3/g3/g80Ω /g57/g69/g69 /g57/g3/g3 /g87/g92/g83/g17 /g19 /g24 /g20/g19 /g20/g24 /g21/g19 /g16/g23/g19 /g19 /g23/g19 /g27/g19 /g20/g21/g19 /g20/g25/g19 /g53/g50/g49 /g3/g3/g80Ω /g55/g77 /g131/g38/g3/g3 /g87/g92/g83/g17 Vbb = 12 V T j = 25°C

Smart High-Side Power Switch BTS 6123B Power Stages Data Sheet 12 V1.0, 2005-12-15 Figure 7 Typical Output Voltage Drop Limitation

4.1.3 Output Inductive Clamp

When switching off inductive loads, the output voltage VOUT drops below ground potential due to the involved inductance ( -diL/dt =-vL/L ; -VOUT ≅ -VL ). Figure 8 Output Clamp To prevent destruction of the device, there is a voltage clamp mechanism implemented that keeps the voltage drop across the device at a certain level (VON(CL)). See Figure 8 and Figure 9 for details. The maximum allowed load inductance is limited. /g19 /g19/g17/g19/g21 /g19/g17/g19/g23 /g19/g17/g19/g25 /g19/g17/g19/g27 /g19/g17/g20 /g19/g21/g23/g25/g27 /g20 /g19 /g20 /g21 /g57/g50/g49 /g3/g3/g57 /g44/g47 /g36/g3/g3 /g87/g92/g83/g17 /g57/g50/g49/g97/g44/g47 Vbb = 12 V Tj = 25°C OutputClamp .emf OUT Vbb VBB RL VOU T I L VON

Smart High-Side Power Switch BTS 6123B Power Stages Data Sheet 13 V1.0, 2005-12-15 Figure 9 Switching an Inductance Maximum Load Inductance While de energizing inductive loads, energy has to be dissipated in the BTS 6123B. This energy can be calculated via the following equation: In the event of de-energizing very low ohmic inductances (RL≈0) the following, simplified equation can be used: The energy, which is converted into heat, is limited by the thermal design of the component. For given starting currents the maximum allowed inductance is therefore limited. See Figure 10 for the maximum allowed inductance at Vbb=12V. VOU T InductiveLoad.emf t IL t VOU T(C L) Vbb ON OFF VON(CL) EV ON CL() V bb V ON CL()– R L  IL+ L R L E 1 2---LIL

2 V ON(CL)

Smart High-Side Power Switch BTS 6123B Power Stages Data Sheet 14 V1.0, 2005-12-15 Figure 10 Maximum load inductance for single pulse, Tj,Start = 150°C /g19/g17/g19/g20 /g19/g17/g20 /g20 /g20/g19 /g20/g19/g19 /g20 /g20/g19 /g20/g19/g19 /g47 /g3/g3/g80/g43 /g44/g47 /g36/g3/g3 Tj(o) ≤ 150°C Vbb = 12 V

Smart High-Side Power Switch BTS 6123B Power Stages Data Sheet 15 V1.0, 2005-12-15

4.1.4 Electrical Characteristics

Vbb = 12 V, Tj = 25°C (unless otherwise specified) Pos. Parameter Symbol Limit Values Unit Test Conditions min. typ. max. General 4.1.1 Operating voltage Vbb 5.5 - 38 V VIN = 0 V Tj = -40..150 °C

4.1.2 Undervoltage

shutdown 1) VbIN(u) -2 . 5 3 . 5 V -

4.1.3 Undervoltage restart

Vbb(ucp) -4 5 . 5 V -

4.1.5 Stand-by current

Tj = -40 °C, Tj = 25 °C Tj ≤ 120 °C 1) Tj = 150 °C Ibb(OFF) µA IIN = 0 A Input characteristics 4.1.6 Input current for onIIN(on) -1 . 4 2 . 2 m A VbIN≥Vbb(ucp)-VIN, Tj = -40 … 150 °C

4.1.7 Input current for offIIN(off) -- 3 0 µA Tj = -40 … 150 °C

4.1.8 On-state resistance

Tj=25°C Tj=150°C Vbb=5.5V, Tj=25°C Vbb=5.5V, Tj=150°C RDS(ON) m Ω VIN=0V, IL=10A, (Tab to pin 1, 2, 6 and 7)

4.1.9 Output voltage drop

VON(NL) -3 0 6 0 m V Tj = -40..150 °C

4.1.10 Nominal load current

(Tab to pin 1, 2, 6 & 7) 2) 3) IL(nom) 91 1- A Ta = 85 °C VON ≤ 0.5 V, Tj ≤ 150 °C ISO load current 3) (Tab to pin 1, 2, 6 & 7) IL(ISO) 33 45 - A Tc = 85 °C VON ≤ 0.5 V, Tj ≤ 150 °C

4.1.11 Output clamp VON(CL) 39 42 - V IL = 40 mA

Smart High-Side Power Switch BTS 6123B Power Stages Data Sheet 16 V1.0, 2005-12-15 Note: Characteristics show the deviation of parameter at the given supply voltage and junction temperature. Typical values show the typical parameters expected from manufacturing.

4.1.12 Inverse current output

1) 4) (Tab to pin 1, 2, 6 & 7) Tj = 25 °C Tj = 150 °C -VON(inv) 950 750 mV IL = -10 A, RIS = 1 kΩ Timings

4.1.13 Turn-on time to

90% V bb tON - 300 600 µs RL = 2.2Ω , Tj = -40 … 150 °C

4.1.14 Turn-off time to

10% V bb tOFF - 300 600 µs RL = 2.2Ω , Tj = -40 … 150 °C

4.1.15 Turn-on delay after

inverse operation 1) VIN(inv) = VIN(fwd) = 0 V td(inv) -1- m s Vbb > VOUT

4.1.16 Slew rate On

25% to 50% Vbb dV/ dtON - 0.2 0.35 V/µs RL = 2.2Ω , Tj = -40 … 150 °C

4.1.17 Slew rate Off

50% to 25% Vbb -dV/ dtOFF -0 . 2 0 . 5 V / µ s RL = 2.2Ω , Tj = -40 … 150 °C Thermal Resistance 4.1.18 Junction to case 1) Rthjc -0 . 81 K / W -

4.1.19 Junction to ambient 1)

device on PCB 2) Rthja K/W - 1) Not subject to production test, specified by design 2) Device mounted on PCB (50 mm x 50 mm x 1.5mm epoxy, FR4) with 6 cm2 copper heatsinking area (one layer, 70 µm thick) for Vbb connection. PCB is vertical without blown air. 3) Not subject to production test, parameters are calculated from RDS(ON) and Rth 4) Permanent Inverse operation results eventually in a current flow via the intrinsic diode of the power DMOS. In this case the device switches on with a time delay td(inv) after the transition from inverse to forward mode. A sense current IIS(fault) can be provided by the pin IS until standard forward operation is reached. Vbb = 12 V, Tj = 25°C (unless otherwise specified) Pos. Parameter Symbol Limit Values Unit Test Conditions min. typ. max.

Smart High-Side Power Switch BTS 6123B Protection Functions Data Sheet 17 V1.0, 2005-12-15

4.2 Protection Functions

The device provides embedded protective functions. Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are neither designed for continuous nor repetitive operation.

4.2.1 Over-Load Protection

The load current IL is limited by the device itself in case of over-load or short circuit to ground. There are multiple steps of current limitation ILx(SC) which are selected automatically depending on the voltage drop VON across the power DMOS. Please note that the voltage at the OUT pin is Vbb -VON . Figure 11 shows the dependency for a typical device. Figure 11 Typical Current Limitation Depending on the severity of the short condition as well as on the battery voltage the resulting voltage drop across the device varies. Whenever the resulting voltage drop VON exceeds the short circuit detection threshold VON(SC) , the device will switch off immediately and latch until being reset via the input. The VON(SC) detection functionality is activated, when VbIN>10V typ. and the blanking time td(SC1) passed by after switch on. In the event that either the short circuit detection via VON(SC) is not activated or that the on chip temperature sensor senses over-temperature before the blanking time td(SC1) passed by, the device switches off resulting from over-temperature detection. After cooling down with thermal hysteresis, the devices switches on again. Please refer to Figure 12 for details. /g19 /g22/g19 /g25/g19 /g28/g19 /g20/g21/g19 /g20/g24/g19 /g19 /g20 /g19/g21 /g19/g22 /g19/g23 /g19 /g3/g3/g36 /g57/g50/g49 /g57/g3/g3 /g87/g92/g83/g17 /g57/g50/g49/g11/g54/g38/g12 /g44/g47/g11/g54/g38/g12

Smart High-Side Power Switch BTS 6123B Protection Functions Data Sheet 18 V1.0, 2005-12-15 Figure 12 Overload Behavior

4.2.2 Short circuit impedance

The capability to handle single short circuit events depends on the battery voltage as well as on the primary and secondary short impedance. Figure 13 outlines allowable combinations for a single short circuit event of maximum, secondary inductance for given secondary resistance. Figure 13 Short circuit

4.2.3 Reverse Polarity Protection - ReversaveTM

The device can not block a current flow in reverse battery condition. In order to minimize power dissipation, the device offers ReversaveTM functionality. In reverse polarity condition the channel will be switched on provided a sufficient gate to source voltage is generated V GS ≈VRbb . Please refer to Figure 14 for details. V_ON_detect.emf t VON t IL IIN t tm ILx(SC) td(SC1) VONx > VON(SC) ϑ j IL t thermal hysteresis t IIN Over_Temp .emf t O ver temperature detectionVON(SC) detection short_circuit.emf Vbb IS IN PROFET OUT Vbb 10mΩ 5uH RSC LSC LO AD SHORT CIRCUIT /g19 /g24 /g20/g19 /g20/g24 /g19 /g24/g19 /g20/g19/g19 /g20/g24/g19 /g21/g19/g19/g3/g3/g80Ω /g47/g54/g38 /g88/g43/g3/g3 /g57/g69/g69/g32/g21/g23/g57 /g57/g69/g69/g32/g20/g27/g57 /g57/g69/g69/g32/g20/g25/g57 /g53/g54/g38

Smart High-Side Power Switch BTS 6123B Protection Functions Data Sheet 19 V1.0, 2005-12-15 Figure 14 Reverse battery protection Additional power is dissipated by the integrated R bb resistor. Use following formula for estimation of overall power dissipation Pdiss(rev) in reverse polarity mode. For reverse battery voltages up to Vbb <16V the pin IN or the pin IS should be low ohmic connected to signal ground. This can be achieved e.g. by using a small signal diode D in parallel to the input switch or by using a small signal MOSFET driver. For reverse battery voltages higher then V bb >16V an additional resistor R IN is recommended. For reverse battery voltages higher then Vbb >16 the overall current through R bb should be about 80mA. Note: No protection mechanism is active during reverse polarity. The IC logic is not functional. Reverse.emf IN -ILLOAD Rbb Vbb RIN Logic IS RIS -Vbb -IIN power groundsignal ground -IIS IRbb D P diss(rev) R ON(rev) IL ⋅ R bb IRbb ⋅+≈ R IN R bb

Smart High-Side Power Switch BTS 6123B Protection Functions Data Sheet 20 V1.0, 2005-12-15

4.2.4 Over-Voltage Protection

Beside the output clamp for the power stage as described in Section 4.1.3 there is a clamp mechanism implemented for all logic pins. See Figure 15 for details. Figure 15 Over-Voltage Protection

4.2.5 Loss of Ground Protection

In case of complete loss of the device ground connections the BTS 6123B securely changes to or remains in off state.

4.2.6 Loss of Vbb Protection

In case of complete loss of Vbb the BTS 6123B remains in off state. In case of loss of Vbb connection with charged inductive loads a current path with load current capability has to be provided, to demagnetize the charged inductances. It is recommended to use a diode, a Z-diode, or a varistor (VZL+VD < 39 V or VZb+VD < 16 V if RIN = 0). For higher clamp voltages currents through IN and IS have to be limited to 120 mA. Please refer to Figure 16 for details. Figure 16 Loss of Vbb OverVoltage .emf IN Rbb Vbb Logic VZ, IS VZ, IN IS OUT IN Rbb Vbb LogicIS Vbb RISRIN VD VZL inductive LOAD Vbb_disconnect_A.emf IN Vbb Lo g icIS Vbb RIS RIN inductive LOAD VD VZb Vbb_disconnect_B.emf Rbb

Smart High-Side Power Switch BTS 6123B Protection Functions Data Sheet 21 V1.0, 2005-12-15

4.2.7 Electrical Characteristics

Vbb = 12 V, Tj = +25°C (unless otherwise specified) Pos. Parameter Symbol Limit Values Unit Test Conditions min. typ. max. Over-Load Protection

4.2.1 Load current limitation1) 2)

Tj = -40 °C Tj = +25 °C Tj = +150 °C IL6(SC) 130 130 100 170 A VON = 6 V, (Tab to pin 1, 2, 6 and 7)

4.2.2 Load current limitation

Tj = -40 °C Tj = +25 °C Tj = +150 °C IL12(SC) 100 100 140 A VON = 12 V, tm = 170 µs, (Tab to pin 1, 2, 6 and 7)

4.2.3 Load current limitation1) 2)

Tj = -40 °C Tj = +25 °C Tj = +150 °C IL18(SC) 100 A VON = 18 V, (Tab to pin 1, 2, 6 and 7)

4.2.4 Load current limitation 2)

Tj = -40 °C Tj = +25 °C Tj = +150 °C IL24(SC) A VON = 24 V, tm = 170 µs, (Tab to pin 1, 2, 6 and 7)

4.2.5 Load current limitation

1) 2) Tj = -40 °C Tj = +25 °C Tj = +150 °C IL30(SC) A VON = 30 V, (Tab to pin 1, 2, 6 and 7)

4.2.6 Short circuit shutdown

VON(SC) 2.5 3.5 4.5 V VbIN > 10 V typ.

4.2.7 Short circuit shutdown

current pos. slope3) td(SC1) 200 650 1200 µs VON > VON(SC) , Tj = -40 … 150 °C

4.2.8 Thermal shut down

Tj(SC) 150 165 -° C -

4.2.9 Thermal hysteresis 1) ∆Tj -1 0- K-

Smart High-Side Power Switch BTS 6123B Protection Functions Data Sheet 22 V1.0, 2005-12-15 Reverse Battery

4.2.10 On-State resistance

Vbb=-8V, Tj=25°C 1) Vbb=-8V, Tj=150°C 1) Vbb=-12V, Tj=25°C Vbb=-12V, Tj=150°C R ON(rev) 9.5 m Ω VIN = 0, IL = -10A, RIS = 1 kΩ , (pin 1, 2, 6 and 7 to TAB)

4.2.11 Integrated resistor in

Rbb - 100 150 Ω - Over-Voltage

4.2.12 Over-voltage

VZ V Ibb = 15 mA, Tj = -40 … 150 °C Input pin VZ,IN 63 67 - V Sense pin VZ,IS 56 61 - V 1) Not subject to production test, specified by design 2) Short circuit current limit for max. duration of td(SC1), prior to shutdown, see also Figure 12. 3) min. value valid only if input “off-signal” time exceeds 30 µs Vbb = 12 V, Tj = +25°C (unless otherwise specified) Pos. Parameter Symbol Limit Values Unit Test Conditions min. typ. max.

Smart High-Side Power Switch BTS 6123B Diagnosis Data Sheet 23 V1.0, 2005-12-15

4.3 Diagnosis

For diagnosis purpose, the BTS 6123B provides an IntelliSense signal at the pin IS. The pin IS provides during normal operation a sense current, which is proportional to the load current as long as Vb,IS>5V. The ratio of the output current is defined as kILIS=IL/IIS. During switch-on no current is provided, until the forward voltage drops below VON <1V typ. The output sense current is limited to IIS,lim. The pin IS provides in case of any fault conditions a defined fault current IIS(fault). Fault conditions are over-current (VON >1V typ.), current limit or over-temperature switch off. The pin IS provides no current during open load in ON, de-energisation of inductive loads and inverse current mode. Figure 17 Block Diagram: Diagnosis Table 1 Truth Table Parameter Input Current Level Output Level Current Sense IIS Normal operation L1) H 1) L H ≈ 0 (IIS(LL)) nominal Overload L H L H ≈ 0 (IIS(LL)) IIS,fault Short circuit to GND L H L L ≈ 0 (IIS(LL)) IIS,fault Overtemperature L H L L ≈ 0 (IIS(LL)) IIS,fault Short circuit to Vbb L H H H ≈ 0 (IIS(LL)) < nominal2) Open load L H Z1) H ≈ 0 (IIS(LL)) ≈ 0 (IIS(LH)) Sense.emf Rbb VIS Vb,IS IIS(fault) Vbb RIS IIS IS VZ,IS

Smart High-Side Power Switch BTS 6123B Diagnosis Data Sheet 24 V1.0, 2005-12-15 The accuracy of the provided current sense ratio (kILIS = IL / IIS) depends on the load current. Please refer to Figure 18 for details. A typical resistor RIS of 1 kΩ is recommended. Figure 18 Current sense ratio kILIS Details about timings between the diagnosis signal IIS, the forward voltage drop VON and the load current IL in ON-state can be found in Figure 19. Note: During operation at low load current and at activated forward voltage drop limitation the “two level control” of VON(NL) can cause a sense current ripple synchronous to the “two level control” of VON(NL). The ripple frequency increases at reduced load currents. 1) H = “High” Level, L = “Low” Level, Z = high impedance, potential depends on external circuit 2) Low ohmic short to Vbb may reduce the output current IL and therefore also the sense current IIS. 1) The curves show the behavior based on characterization data. The marked points are guaranteed in this Data /g19 /g20/g19/g19/g19/g19 /g21/g19/g19/g19/g19 /g22/g19/g19/g19/g19 /g23/g19/g19/g19/g19 /g19 /g24 /g20/g19 /g20/g24 /g21/g19 /g21/g24 /g22/g19 /g78/g44/g47/g44/g54 /g44/g47 /g36/g3/g3 /g80/g68/g91/g17 /g87/g92/g83/g17 /g80/g76/g81/g17 /g44/g47/g15/g80/g76/g81

Smart High-Side Power Switch BTS 6123B Diagnosis Data Sheet 25 V1.0, 2005-12-15 Figure 19 Timing of Diagnosis Signal in ON-state SwitchOn.emf VON IIN tVON<1V typ. IL1 IL2 IIS1 IIS2 tson(IS) tslc(IS) IL IIS 0.9*I IS1 IIS(fa u lt) VON>1V typ. IIS(li m) IIS(LL ) t t t IIN VON tVON>VON(SC) over-temperature ILx(SC) tdelay(fault) IL IIS II S(f ault) t t t IL VON<1V typ. IIS(fa ul t) shortnormal operation

Smart High-Side Power Switch BTS 6123B Diagnosis Data Sheet 26 V1.0, 2005-12-15

4.3.1 Electrical Characteristics

Vbb = 12 V, Tj = 25°C (unless otherwise specified) Pos. Parameter Symbol Limit Values Unit Test Conditions min. typ. max. Load Current Sense

4.3.1 Current sense ratio,

kILIS -1 2 . 5- k VIN = 0 V, IIS < IIS,lim IL=35A IL=10A IL=1A 12.5 12.5 12.5 16.5 Tj = -40..150 °C IIN = 0 (e.g. during de energizing of inductive loads) 1) 1) Not subject to production test, specified by design disabled - -

4.3.2 Sense saturation

current 1) IIS(lim) 2.5 6 10 mA VON < 1 V, typ. Tj = -40 … 150 °C

4.3.3 Sense current under

IIS(fault) 2.5 6 10 mA VON > 1 V, typ. Tj = -40 … 150 °C

4.3.4 Current sense

IIS(LL) –0 . 1 0 . 5 µA IIN = 0

4.3.5 Current sense offset

IIS(LH) –0 . 11 µA VIN = 0, IL ≤ 0

4.3.6 Minimum load current

IL(MIN) 1–– A VIN = 0, Tj = -40 … 150 °C

4.3.7 Current sense settling

time to 90% IIS_stat. tson(IS) – 350 700 µs IL =0 2 0A Tj = -40 … 150 °C

4.3.8 Current sense settling

time to 90% IIS_stat. tslc(IS) –5 0 1 0 0 µs IL =1 0 2 0A Tj = -40 … 150 °C

4.3.9 Fault-Sense signal

tdelay(fault) 200 650 1200 µs VON > 1 V, typ. Tj = -40 … 150 °C

Smart High-Side Power Switch BTS 6123B Package Outlines BTS 6123B Data Sheet 27 V1.0, 2005-12-15

5 Package Outlines BTS 6123B

(Plastic Dual Small Outline Package) Y ou can find all of our packages, sorts of packing and others in our Infineon Internet Page “Products”: http://www.infineon.com/products. Dimensions in mmSMD = Surface Mounted Device

Smart High-Side Power Switch BTS 6123B

Revision History

Data Sheet 28 V1.0, 2005-12-15

6 Revision History

V1.0 05-12-15 initial version of Data Sheet

Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München, Germany © Infineon Technologies AG 12/16/05. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide. Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Smart High-Side Power Switch BTS 6123B Data Sheet 29 V1.0, 2005-12-15

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