BTS610L1 SIEMENS | Alldatasheet

Document overview

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  • PDF pages: 12

Technical content

Features

  • Overload protection
  • Current limitation
  • Short circuit protection
  • Thermal shutdown
  • Overvoltage protection (including load dump)
  • Reverse battery protection1)
  • Undervoltage and overvoltage shutdown with auto-restart and hysteresis
  • Open drain diagnostic output
  • Open load detection in ON-state
  • CMOS compatible input
  • Loss of ground and loss of Vbb protection
  • Electrostatic discharge (ESD ) protection Application
  • µC compatible power switch with diagnostic feedback for 12 V DC grounded loads
  • Most suitable for resistive and lamp loads General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Fully protected by embedded protection functions. + V bb IN1 ST Signal GND ESD PROFET OUT1 GND Logic Voltage sensor Voltage source Open load detection 1 Short to Vbb Level shifter Temperature sensor 1 Rectifier 1 Gate 1 protection Current limit 1 Load GND Load V Logic Overvoltage protection OUT2 Open load detection 2 Short to Vbb Level shifter Temperature sensor 2 Rectifier 2 Gate 2 protection Current limit 2 IN26 GND RRO1 O2 Charge pump 1 Charge pump 2 1) With external current limit (e.g. resistor RGND =150 Ω ) in GND connection, resistor in series with ST connection, reverse load current limited by connected load. Product Summary Overvoltage protectionVbb(AZ ) 43 V Operating voltage Vbb(on) 5.0 ... 24 V channels: each both parallel On-state resistanceR ON 200 100 m Ω Load current (ISO)IL(ISO) 2.3 4.4 A Current limitationIL(SCr) 55 A TO-220AB/7 Standard

1 OUT1 (Load, L) Output 1, protected high-side power output of channel 1

2 GND Logic ground

3 IN1 Input 1, activates channel 1 in case of logical high signal

4V bb Positive power supply voltage, the tab is shorted to this pin 5S T Diagnostic feedback: open drain, low on failure

6 IN2 Input 2, activates channel 2 in case of logical high signal

7 OUT2 (Load, L) Output 2, protected high-side power output of channel 2

Maximum Ratings at Tj = 25 °C unless otherwise specified Parameter Symbol Values Unit Supply voltage (overvoltage protection see page 3)Vbb 43 V Supply voltage for full short circuit protection Tj Start=-40 ...+150°C Vbb 24 V Load dump protection2) VLoadDump = U A + Vs, U A = 13.5 V R I3)= 2 Ω , R L= 5.3 Ω , td= 200 ms, IN= low or high VLoad dump4) 60 V Load current (Short circuit current, see page 4)IL self-limited A Operating temperature range Storage temperature range Tj Tstg -40 ...+150 -55 ...+150 Power dissipation (DC), TC ≤ 25 °C Ptot 36 W Electrostatic discharge capability (ESD ) IN: (Human Bod y Model) all other pins: VESD 1.0 2.0 kV Input voltage (DC) VIN -10 ... +16 V Current through input pin (DC) Current through status pin (DC) see internal circuit diagrams page 6 IIN IST ±2.0 ±5.0 mA Thermal Characteristics Parameter and Conditions S ymbol Values Unit min typ max Thermal resistance chip - case, both channels: each channel: junction - ambient (free air): R thJC R thJA 3.5 7.0 K/W 2) Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins, e.g. with a 150 Ω resistor in the GND connection and a 15 kΩ resistor in series with the status pin. A resistor for the protection of the input is integrated. 3) R I = internal resistance of the load dump test pulse generator 4) VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839

Electrical Characteristics

Parameter and Conditions, each channel Symbol Values Unit at Tj = 25 °C, Vbb = 12 V unless otherwise specified min typ max Load Switching Capabilities and Characteristics On-state resistance (pin 4 to 1 or 7) IL = 1.8 A Tj=25 °C: each channel Tj=150 °C: R ON -- 160 320 200 400 m Ω Nominal load current, ISO Norm (pin 4 to 1 or 7) VON = 0.5 V, TC = 85 °C each channel: both channels parallel: IL(ISO) 1.8 3.5 2.3 4.4 A Output current (pin 1 or 7) while GND disconnected or GND pulled up, Vbb=30 V, VIN= 0, see diagram page 7 IL(GNDhigh) -- -- 10 mA Turn-on time IN to 90% VOUT : Turn-off time IN to 10% VOUT : ton toff 200 200 400 400 µs Slew rate on 10 to 30% VOUT , R L = 12 Ω , Tj =-40...+150°C dV /dton 0.1 -- 1 V/ µs Slew rate off 70 to 40% VOUT , R L = 12 Ω , Tj =-40...+150°C -dV/dtoff 0.1 -- 1 V/ µs Operating Parameters Operating voltage5) Tj =-40...+150°C:Vbb(on) 5.0 -- 24 V Undervoltage restart Tj =-40...+150°C:Vbb(u rst) -- -- 5.0 V Undervoltage restart of charge pump see diagram page 10 Vbb(ucp) -- 5.6 7.0 V Undervoltage hysteresis ΔVbb(under) = Vbb(u rst) - Vbb(under) ΔVbb(under) -- 0.2 -- V Overvoltage shutdown Tj =-40...+150°C:Vbb(over) 24 -- 34 V Overvoltage restart Tj =-40...+150°C:Vbb(o rst) 23 -- -- V Overvoltage hysteresis Tj =-40...+150°C:ΔVbb(over) -- 0.5 -- V Overvoltage protection6) Tj =-40...+150°C: Ibb=40 mA Vbb(AZ) 42 47 -- V Standby current (pin 4) Tj=-40...+25°C: VIN=0 Tj= 150°C: Ibb(off) -- µA Leakage output current (included in Ibb(off)) VIN=0 IL(off) -- -- 12 µA Operating current (Pin 2)7), VIN=5 V both channels on, Tj =-40...+150°C IGND -- 4 6 mA 5) At supply voltage increase up to Vbb= 5.6 V typ without charge pump, VOUT ≈Vbb - 2 V 6) See also VON(CL) in table of protection functions and circuit diagram page 7.

Parameter and Conditions, each channel Symbol Values Unit at Tj = 25 °C, Vbb = 12 V unless otherwise specified min typ max Semiconductor Group 4 Operating current (Pin 2)7) one channel on, Tj =-40...+150°C: IGND -- 2 3 mA Protection Functions Initial peak short circuit current limit IL(SCp) (pin 4 to 1 or 7) Tj =-40°C: Tj =25°C: Tj =+150°C: 3.5 11.5 7.5 A Repetitive short circuit shutdown current limitIL(SCr) Tj = Tjt (see timing diagrams, page 9) -- 5 -- A Thermal overload trip temperature Tjt 150 -- -- °C Thermal hysteresis ΔTjt -- 10 -- K Reverse battery (pin 4 to 2) 8) -Vbb -- -- 32 V Reverse battery voltage drop (Vout > Vbb) IL = -1.8 A, each channel Tj=150 °C: -VON(rev) -- 610 -- mV Diagnostic Characteristics Open load detection current Tj=-40 °C: (on-condition, ) Tj=25..150°C: IL (OL) 10 200 150 mA Open load detection voltage9) (off-condition) Tj=-40..150°C: VOUT(OL) 234 V Internal output pull down (pin 1 or 7 to 2), VOUT =5 V, Tj=-40..150°C R O 41 03 0 k Ω 7) Add IST , if IST > 0, add IIN, if VIN>5.5 V 8) Requires 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature protection is not active during reverse current operation! Input and Status currents have to be limited (see max. ratings page 2 and circuit page 7). 9) External pull up resistor required for open load detection in off state.

Parameter and Conditions, each channel Symbol Values Unit at Tj = 25 °C, Vbb = 12 V unless otherwise specified min typ max Semiconductor Group 5 Input and Status Feedback10) Input resistance Tj=-40..150°C, see circuit page 6 R I 2.5 3.5 6 k Ω Input turn-on threshold voltage Tj =-40..+150°C:VIN(T+) 1.7 -- 3.5 V Input turn-off threshold voltage Tj =-40..+150°C:VIN(T-) 1.5 -- -- V Input threshold hysteresis Δ VIN(T) -- 0.5 -- V Off state input current (pin 3 or 6), VIN = 0.4 V, Tj =-40..+150°C IIN(off) 1- - 5 0 µA On state input current (pin 3 or 6), VIN = 3.5 V, Tj =-40..+150°C IIN(on) 20 50 90 µA Delay time for status with open load after switch off (other channel in off state) (see timing diagrams, page 10), Tj =-40..+150°C td(ST OL4) 100 320 800 µs Delay time for status with open load after switch off (other channel in on state) (see timing diagrams, page 10), Tj =-40..+150°C td(ST OL5) -- 5 20 µs Status invalid after positive input slope (open load) Tj=-40 ... +150°C: td(ST) -- 200 600 µs Status output (open drain) Zener limit voltageTj =-40...+150°C, IST = +1.6 mA: ST low voltageTj =-40...+25°C, IST = +1.6 mA: Tj = +150°C, IST = +1.6 mA: VST(high) VST(low) 5.4 6.1 0.4 0.6 V 10) If a ground resistor RGND is used, add the voltage drop across this resistor.

L H H L H L H L L H H L H L H H H H H H H H H Open load Channel 1 L L H L H X Z Z H L H X H(L11)) H L L H H Channel 2 L H X L L H L H X Z Z H H(L11)) H L L H H Short circuit to Vbb Channel 1 L L H L H X H H H L H X L 12) H H(L13)) L H H Channel 2 L H X L L H L H X H H H L 12) H H(L13)) L H H Overtemperature both channel L X H L H X L L L L L L H L L H L L Channel 1 L H X X L L X X H L H L Channel 2 X X L H X X L L H L H L Undervoltage/ Overvoltage X X L L H H L = "Low" Level X = don't care Z = high impedance, potential depends on external circuit H = "High" Level Status signal after the time delay shown in the diagrams (see fig 5. page 10) 11) With additional external pull up resistor 12) An external short of output to Vbb, in the off state, causes an internal current from output to ground. If RGND is used, an offset voltage at the GND and ST pins will occur and the VST low signal may be errorious. 13) Low resistance to Vbb may be detected in the ON-state by the no-load-detection Terms PROFET V IN2 ST OUT2 GND bb VST VIN1 IST IIN1 Vbb Ibb IL2 V OUT2IGND VON2 IN1 VIN2 IIN2 VOUT1 VON1 IL1 OUT1 R GND Input circuit (ESD protection) IN GND IR ESD-ZD III ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V).

+5V R ST(ON) ESD-Zener diode: 6.1 V typ., max 5 mA; R ST(ON) < 380 Ω at 1.6 mA, ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V). overvoltage output clamp + Vbb OUT GND PROFET V Z VON VON clamped to 47 V typ. Overvolt. and reverse batt. protection + Vbb IN2 ST STR GND GNDR Signal GND Logic V Z2 IN1 R I V Z1 VZ1 = 6.1 V typ., VZ2 = 47 V typ., R I= 3.5 kΩ typ, R GND = 150 Ω Open-load detection ON-state diagnostic condition: VON < R ON * IL(OL); IN high Open load detection Logic unit + Vbb OUT ON VON OFF-state diagnostic condition: VOUT > 3 V typ.; IN low Open load detection Logic unit V OUT Signal GND R EXT R O OFF GND disconnect PROFET V IN2 ST OUT2 GND bb Vbb Ibb IN1 OUT1 VIN1VIN2VST VGND In case of Input=high is VOUT ≈ VIN - VIN(T+) . Due to VGND >0, no VST = low signal available.

GND disconnect with GND pull up PROFET V IN2 ST OUT2 GND bb Vbb IN1 OUT1 VIN1 VIN2 V ST VGND If VGND > VIN - VIN(T+) device stays off Due to VGND >0, no VST = low signal available. Typ. transient thermal impedance chip case ZthJC = f(tp, D), D=tp/T, one Channel active ZthJC [K/W] 0.01 0.1 1E-5 1E-4 1E-3 1E-2 1E-1 1E0 1E1 0.01 0.02 0.05 0.1 0.2 0.5 tp [s] Typ. transient thermal impedance chip case ZthJC = f(tp, D), D=tp/T, both Channel parallel ZthJC [K/W] 0.01 0.1 1E-5 1E-4 1E-3 1E-2 1E-1 1E0 1E1 0.01 0.02 0.05 0.1 0.2 0.5 tp [s]

Standard TO-220AB/7 Ordering code BTS610L1 Q67060-S6300-A2