BTS560 SIEMENS | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 15

Technical content

Features

  • Overload protection
  • Current limitation
  • Short circuit protection
  • Overtemperature protection
  • Overvoltage protection (including load dump)
  • Clamp of negative voltage at output
  • Fast deenergizing of inductive loads 1)
  • Low ohmic inverse current operation
  • Reverse battery protection
  • Diagnostic feedback with load current sense
  • Open load detection via current sense
  • Loss of Vbb protection2)
  • Electrostatic discharge (ESD ) protection Application
  • Power switch with current sense diagnostic feedback for up to 48 V DC grounded loads
  • Most suitable for loads with high inrush current like lamps and motors; all types of resistive and inductive loads
  • Replaces electromechanical relays, fuses and discrete circuits General Description N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load current sense, integrated in Smart SIPMOS chip on chip technology. Fully protected by embedded protection functions. IN Charge pump Level shifter Rectifier Limit for unclamped ind. loads Gate protection Current limit Overvoltage protection + Vbb PROFET  OUT 3 & Tab 1, 5 Load GND Load Output Voltage detection R IS IS IIS IL V IS IIN Logic GND Voltage sensor Voltage source Current Sense LogicESD Temperature sensor R bb VIN 1) With additional external diode. 2) Additional external diode required for energized inductive loads (see page 8). Product Summary Overvoltage protectionVbb(AZ) 70 V Output clamp VON (CL ) 60 V Operating voltage Vbb(on) 5.0 ... 55 V On-state resistance R ON 4 mΩ Load current (ISO) IL(ISO) 96 A Short circuit current limitation IL(SCp) 320 A Current sense ratio IL : IIS 25 000 TO-218AB/5 Straight leads

Semiconductor Group Page 2 1998-Jun-17 Pin Symbol Function 1O U T O Output to the load. The pins 1 and 5 must be shorted with each other especially in high current applications!3)

2 IN I Input, activates the power switch in case of short to ground

3V bb + Positive power supply voltage, the tab is electrically connected to this pin. In high current applications the tab should be used for the Vbb connection instead of this pin4). 4I S S Diagnostic feedback providing a sense current proportional to the load current; zero current on failure (see Truth Table on page 6) 5O U T O Output to the load. The pins 1 and 5 must be shorted with each other especially in high current applications!3) Maximum Ratings at Tj = 25 °C unless otherwise specified Parameter Symbol Values Unit Supply voltage (overvoltage protection see page 4)Vbb 60 V Supply voltage for full short circuit protection, resistive load or L < tbd µHTj,start =-40 ...+150°C: Vbb 55 V Load current (short circuit current, see page 4)IL self-limited A Load dump protection VLoadDump = U A + Vs, U A = 13.5 V R I5) = 2 Ω , R L = 0.1 Ω , td = 200 ms, IN, IS = open or grounded VLoad dump6) 80 V Operating temperature range Storage temperature range Tj Tstg -40 ...+150 -55 ...+150 Power dissipation (DC), TC ≤ 25 °C Ptot 310 W Inductive load switch-off energy dissipation, single pulse Vbb = 12V, Tj,start = 150°C, TC = 150°C const., IL = tbd (>=20) A, ZL = tbd mH, 0 Ω , see diagrams on page 9 EAS tbd J Electrostatic discharge capability (ESD) Human Body Model acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993, C = 100 pF, R = 1.5 kΩ VESD 2.0 kV Current through input pin (DC) Current through current sense status pin (DC) see internal circuit diagrams on page 7 IIN IIS +15 , -250 +15 , -250 mA 3) Not shorting all outputs will considerably increase the on-state resistance, reduce the peak current capability and decrease the current sense accuracy 4) Otherwise add up to 0.5 mΩ (depending on used length of the pin) to the RON if the pin is used instead of the tab. 5) R I = internal resistance of the load dump test pulse generator. 6) VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839.

Semiconductor Group Page 3 1998-Jun-17 Thermal Characteristics Parameter and Conditions Symbol Values Unit min typ max Thermal resistance chip - case : R thJC7) -- -- 0.40 K/W junction - ambient (free air):R thJA -- 30 --

Electrical Characteristics

Parameter and Conditions Symbol Values Unit at Tj = -40 ... +150 °C, Vbb = 12 V unless otherwise specified min typ max Load Switching Capabilities and Characteristics On-state resistance (Tab to pins 1,5, see measurement circuit page 7) IL = tbd (>=20) A, Tj = 25 °C: VIN = 0, IL = tbd (>=20) A, Tj = 150 °C: R ON -- 3.3 6.5 4.0 7.8 m Ω IL = 150 A, Tj = 150 °C: 7.9 Nominal load current8) (Tab to pins 1,5) ISO 10483-1/6.7: VON = 0.5 V, Tc = 85 °C 9) IL(ISO) 80 96 -- A Maximum load current in resistive range (Tab to pins 1,5) VON = 1.8 V, Tc = 25 °C: see diagram on page 12 VON = 1.8 V, Tc = 150 °C: IL(Max) tbd tbd -- A Turn-on time10) IIN to 90% VOUT : Turn-off time I IN to 10% VOUT : ton toff 130 550 240 µs Slew rate on 10) (10 to 30% VOUT ) R L = 1 Ω dV/dton -- 0.8 -- V/ µs Slew rate off 10) (70 to 40% VOUT ) R L = 1 Ω -dV/dtoff -- 0.8 -- V/ µs 7) Thermal resistance RthCH case to heatsink (about 0.25 K/W with silicone paste) not included! 8) Not tested, specified by design. 9) TJ is about 105°C under these conditions. 10) See timing diagram on page 13. Inverse Load Current Operation On-state resistance (Pins 1,5 to pin 3) VbIN = 12 V, IL = - tbd (>=20) A Tj = 25 °C: see diagram on page 9 Tj = 150 °C: R ON(inv) -- 3.3 6.5 4.0 7.8 m Ω Nominal inverse load current (Pins 1,5 to Tab) VON = -0.5 V, Tc = 85 °C9 IL(inv) 80 96 -- A Drain-source diode voltage (Vout > Vbb) IL = - tbd (>=20) A, IIN = 0, Tj = +150°C -VON -- tbd -- mV

Parameter and Conditions Symbol Values Unit at Tj = -40 ... +150 °C, Vbb = 12 V unless otherwise specified min typ max Semiconductor Group Page 4 1998-Jun-17 Operating Parameters Operating voltage (VIN = 0) 11) Vbb(on) 5.0 -- 55 V Undervoltage shutdown 12) VbIN(u) -- 3.5 4.5 V Undervoltage start of charge pump see diagram page 14 VbIN(ucp) -- 5 6.5 V Overvoltage protection13) Tj =-40°C: Ibb = 15 mA Tj = 25...+150°C: VbIN(Z) 68 V Standby current Tj =-40...+25°C: IIN = 0 Tj = 150°C: Ibb(off) -- µA Protection Functions Short circuit current limit (Tab to pins 1,5) VON = 12 V, time until shutdown max. 300 µs Tc =-40°C: Tc =25°C: Tc =+150°C: IL(SCp) -- tbd tbd 370 320 225 tbd tbd A Short circuit shutdown delay after input current positive slope, VON > VON(SC) min. value valid only if input "off-signal" time exceeds 30 µs td(SC) 80 -- 300 µs Output clamp 14) IL= 40 mA: (inductive load switch off) IL= 20 A: (typ. IIS = -120µA) -VOUT(CL) -- V Output clamp (inductive load switch off) at VOUT = Vbb - VON(CL) (e.g. overvoltage) IL= 40 mA VON(CL) 60 64 68 V Short circuit shutdown detection voltage (pin 3 to pins 1,5) VON(SC) -- 6 -- V 11) For all voltages 0 ... 55 V the device is fully protected against overtemperature and short circuit. 12) VbIN = Vbb - VIN see diagram on page 7. When VbIN increases from less than VbIN(u) up to VbIN(ucp) = 5 V (typ.) the charge pump is not active and VOUT ≈Vbb - 3 V. 13) See also VON(CL) in circuit diagram on page 8. 14) This output clamp can be "switched off" by using an additional diode at the IS-Pin (see page 7). If the diode is used, VOUT is clamped to Vbb- VON(CL) at inductive load switch off.

Parameter and Conditions Symbol Values Unit at Tj = -40 ... +150 °C, Vbb = 12 V unless otherwise specified min typ max Semiconductor Group Page 5 1998-Jun-17 Thermal overload trip temperature Tjt 150 -- -- °C Thermal hysteresis ΔTjt -- 10 -- K Reverse Battery Reverse battery voltage 15) -Vbb -- -- 42 V On-state resistance (Pins 1,5 to pin 3) Tj = 25 °C: Vbb = -12V, VIN = 0, IL = - tbd (>=20) A, R IS = 1 kΩ Tj = 150 °C: R ON(rev) -- 3.7 tbd 0 m Ω Integrated resistor in Vbb line R bb -- tbd -- Ω Diagnostic Characteristics Current sense ratio, static on-condition, -40°C: kILIS = IL : IIS, VON < 1.5 V16), 25°C: VIS <VOUT - 5 V, VbIN > 4.5 V 150°C: kILIS -- 26 530 25 430 23 520 IL = 150 A: see diagram on page 11 IL = 25 A: IL = 12 A: IL = 6 A: -40°C: ±4.5% ±8.9% ±15% ±46% +25°C: ±4.2% ±7.5% ±12% ±36% 150°C: ±4.0% ±6.1% ±9.0% ±24% IIN = 0, IIS=0(e.g. during deenergizing of inductive loads): -- -- -- Sense current saturation IIS,lim 5.5 -- -- mA Current sense leakage current IIN = 0, VIS = 0: VIN = 0, VIS = 0, IL ≤ 0: IIS(LL) IIS(LH) 0.5 µA Current sense settling time17) after positive input slope (90% of IIS static) IL = 0 / tbd (>=20) A: tson(IS) -- tbd 500 µs Current sense settling time17) after negative input slope (10% of IIS static) IL = tbd (>=20) / 0 A: tsoff(IS) -- tbd 500 µs Current sense settling time17) after change of load current (60% to 90%) IL = 15 / tbd (>=20) A: tslc(IS) -- tbd 500 µs Overvoltage protection Tj =-40°C: Ibb = 15 mA Tj = 25...+150°C: VbIS(Z) 68 V 15) The reverse load current through the intrinsic drain-source diode has to be limited by the connected load (as it is done with all polarity symmetric loads). Note that under off-conditions (IIN = IIS = 0) the power transistor is not activated. This results in raised power dissipation due to the higher voltage drop across the intrinsic drain-source diode. The temperature protection is not active during reverse current operation! Increasing reverse battery voltage capability is simply possible as described on page 8. 16) If VON is higher, the sense current is no longer proportional to the load current due to sense current saturation, see IIS,lim . 17) Not tested, specified by design.

Parameter and Conditions Symbol Values Unit at Tj = -40 ... +150 °C, Vbb = 12 V unless otherwise specified min typ max Semiconductor Group Page 6 1998-Jun-17 Input Input and operating current (see diagram page 12) IN grounded (VIN = 0) IIN(on) -- 1 2 mA Input current for turn-off18) IIN(off) -- -- 40 µA Truth Table Input current Output Current Sense Remark level level I IS Normal operation L H L H nominal =IL / kilis, up to IIS=IIS,lim Very high load current HH I IS, lim up to VON =V ON(Fold back) IIS no longer proportional to IL Current- limitation HH 0 VON > VON(Fold back) if VON >V ON(SC) , shutdown will occure Short circuit to GND L H L L Over- temperature L H L L Short circuit to V bb L H H H <nominal 19) Open load L H Z20) H Negative output voltage clamp LL 0 Inverse load current L H H H L = "Low" Level H = "High" Level Overtemperature reset via input: I IN=low and Tj < Tjt (see diagram on page 15) Short circuit to GND: Shutdown remains latched until next reset via input (see diagram on page 13) 18) We recommend the resistance between IN and GND to be less than 0.5 kΩ for turn-on and more than 500kΩ for turn-off. Consider that when the device is switched off (IIN = 0) the voltage between IN and GND reaches almost Vbb. 19) Low ohmic short to Vbb may reduce the output current IL and can thus be detected via the sense current IIS. 20) Power Transistor "OFF", potential defined by external impedance.

Semiconductor Group Page 7 1998-Jun-17 Terms PROFET V IN IS OUT bb VIN IIS IIN V bb Ibb IL VOUT VON 1,5 R ISVIS VbIN RIN D S VbIS Two or more devices can easily be connected in parallel to increase load current capability. R ON measurement layout SenseV force contacts Out Forcebb contacts 5.5 mm contacts (both out pins parallel) Input circuit (ESD protection) IN ZD INI V bb R bbV Z,IN V bIN V IN When the device is switched off (IIN = 0) the voltage between IN and GND reaches almost Vbb. Use a mechanical switch, a bipolar or MOS transistor with appropriate breakdown voltage as driver. VZ,IN = 74 V (typ). Current sense status output IS ISR ISI ZD ISV bbV bbR Z,ISV VZ,IS = 74 V (typ.), R IS = 1 kΩ nominal (or 1 kΩ /n, if n devices are connected in parallel). IS = IL/kilis can be only driven by the internal circuit as long as Vout - VIS > 5 ??? V. If you want to measure load currents up to IL(M), RIS should be less than Vbb - 5 ??? V IL(M) / Kilis Note: For large values of R IS the voltage VIS can reach almost Vbb. See also overvoltage protection. If you don't use the current sense output in your application, you can leave it open. Short circuit detection Fault Condition: VON > VON(SC) (6 V typ.) and t> td(SC) (80 ...300 µs). Short circuit detection Logic unit + Vbb OUT VON Inductive and overvoltage output clamp + Vbb OUT PROFET VZ1 VON DS IS VOUT VZG VON is clamped to VON(Cl) = 62 V typ. At inductive load switch-off without DS, VOUT is clamped to VOUT(CL) = -15 V typ. via VZG . With DS, VOUT is clamped to Vbb - VON(CL) via VZ1. Using DS gives faster deenergizing of

Semiconductor Group Page 8 1998-Jun-17 the inductive load, but higher peak power dissipation in the PROFET. Overvoltage protection of logic part + Vbb V OUT IN bbR Signal GND Logic PROFET V Z,IS R IS INR IS V Z,IN R V V Z,VIS R bb = 120 Ω typ., VZ,IN = VZ,IS = 74 V typ., R IS = 1 kΩ nominal. Note that when overvoltage exceeds 79 V typ. a voltage above 5V can occur between IS and GND, if R V, VZ,VIS are not used. Reverse battery protection Logic IS IN ISR VR OUT LR Power GNDSignal GND V bb- Power TransistorINR bbR D SD R V ≥ 1 kΩ, R IS = 1 kΩ nominal. Add R IN for reverse battery protection in applications with Vbb above

16 V15); recommended value: 1

+ 1 R IS + 1 R V 0.1A |Vbb| - 12V if DS is not used (or 1 R IN = 0.1A |Vbb| - 12V if DS is used). To minimize power dissipation at reverse battery operation, the summarized current into the IN and IS pin should be about 120mA. The current can be provided by using a small signal diode D in parallel to the input switch, by using a MOSFET input switch or by proper adjusting the current through R IS and R V. Vbb disconnect with energized inductive load Provide a current path with load current capability by using a diode, a Z-diode, or a varistor. (VZL < 70 V or VZb < 42 V if RIN=0). For higher clamp voltages currents at IN and IS have to be limited to 250 mA. Version a: PROFET V IN OUT IS bb V bb V ZL Version b: PROFET V IN OUT IS bbV bb V Zb Note that there is no reverse battery protection when using a diode without additional Z-diode VZL, VZb. Version c: Sometimes a neccessary voltage clamp is given by non inductive loads RL connected to the same switch and eliminates the need of clamping circuit: PROFET V IN OUT IS bbV bb R L

Semiconductor Group Page 9 1998-Jun-17 Inverse load current operation PROFET V IN OUT IS bb V bb V OUT - IL R IS V IS V IN - + IIS The device is specified for inverse load current operation (VOUT > Vbb > 0V). The current sense feature is not available during this kind of operation (IIS = 0). With IIN = 0 (e.g. input open) only the intrinsic drain source diode is conducting resulting in consi- derably increased power dissipation. If the device is switched on (V IN = 0), this power dissipation is decreased to the much lower value R ON(INV) * I2 (specifications see page 3). Note: Temperature protection during inverse load current operation is not possible! Inductive load switch-off energy dissipation PROFET V IN OUT IS bb E E E E AS bb L R ELoad L R L {Z L R IS IIN V bb i (t)L Energy stored in load inductance: EL = 1/2·L·I2 L While demagnetizing load inductance, the energy dissipated in PROFET is EAS = Ebb + EL - ER = ∫ VON(CL)·iL(t) dt, with an approximate solution for RL > 0 Ω : EAS = IL· L 2·R L (Vbb + |VOUT(CL) |) ln (1+ IL·R L |VOUT(CL) | ) Maximum allowable load inductance for a single switch off L = f (IL ); Tj,start = 150°C, Vbb = 12 V, RL = 0 Ω L [mH] 100 1000 10000 0 2.5 5 7.5 10 12.5 15 IL [A]

Semiconductor Group Page 10 1998-Jun-17 Options Overview Type BTS 660P 560 Overtemperature protection with hysteresisXX Tj >150 °C, latch function21) Tj >150 °C, with auto-restart on coolingX X Short circuit to GND protection switches off when VON >6 V typ. (when first turned on after approx. 180 µs) XX Overvoltage shutdown -- Output negative voltage transient limit to Vbb - VON(CL) XX to VOUT = -15 V typ X 22) X22) 21) Latch except when Vbb -VOUT < VON(SC) after shutdown. In most cases VOUT = 0 V after shutdown (VOUT ≠ 0 V only if forced externally). So the device remains latched unless Vbb < VON(SC) (see page 4). No latch between turn on and td(SC). 22) Can be "switched off" by using a diode DS (see page 7) or leaving open the current sense output.

Semiconductor Group Page 11 1998-Jun-17 Characteristics Current sense versus load current: IIS = f(IL) IIS [mA] 0 50 100 150 200 max min IL [A] Current sense ratio: KILIS = f(IL), TJ = -40 °C kilis 15000 17000 19000 21000 23000 25000 27000 29000 31000 33000 35000 0 50 100 150 200 min typ max IL [A] Current sense ratio: KILIS = f(IL), TJ = 25 °C kilis 15000 17000 19000 21000 23000 25000 27000 29000 31000 33000 35000 0 50 100 150 200 min typ max IL [A] Current sense ratio: KILIS = f(IL), TJ = 150 °C kilis 15000 17000 19000 21000 23000 25000 27000 29000 31000 33000 35000 0 50 100 150 200 min typ max IL [A]

Semiconductor Group Page 12 1998-Jun-17 Typ. current limitation characteristic IL = f (VON , Tj ) IL [A] 100 200 300 400 500 600 700 800 900 1000 0 5 10 15 20 Tj = -40°C 25°C 85°C 150°C VON(FB) /c11/c41/c82/c79/c71/c3/c37/c68/c70 /c78/c12 VON >VON(SC) only for t < td(SC) (otherwise immediate shutdown) VON [V] In case of VON > VON(SC) (typ. 6 V) the device will be switched off by internal short circuit detection. Typ. on-state resistance R ON = f (Vbb, Tj ); IL = tbd (>=20) A; VIN = 0 R ON [mOhm] 0 5 10 15 20 static dynamic Tj = 150°C 85°C 25°C -40°C Vbb [V] Typ. input current IIN = f (VbIN), VbIN = Vbb - VIN IIN [mA] 0.2 0.4 0.6 0.8 1.2 1.4 1.6 0 2 04 06 08 0 VbIN [V]

Semiconductor Group Page 15 1998-Jun-17 Package and Ordering Code All dimensions in mm TO-218AB/5 Option E3146 Ordering code BTS560 E3146 Q67060-S6953A3 Published by Siemens AG, Bereich Halbleiter Vetrieb, Werbung, Balanstraße 73, D-81541 München  Siemens AG 1998. All Rights Reserved Attention please! As far as patents or other rights of third parties are concerned, liability is only assumed for components, not for applications, processes and circuits implemented within components or assemblies. The information describes a type of component and shall not be considered as warranted characteristics. Terms of delivery and rights to change design reserved. For questions on technology, delivery and prices please contact the Semiconductor Group Offices in Germany or the Siemens Companies and Representatives worldwide (see address list). Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Siemens Office, Semiconductor Group. Siemens AG is an approved CECC manufacturer. Packing: Please use the recycling operators known to you. We can also help you - get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorised for such purpose! Critical components23 ) of the Semiconductor Group of Siemens AG, may only be used in life supporting devices or systems24) with the express written approval of the Semiconductor Group of Siemens AG. 23) A critical component is a component used in a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 24) Life support devices or systems are intended (a) to be implanted in the human body or (b) support and/or maintain and sustain and/or protect human life. If they fail, it is reasonably to assume that the health of the user or other persons may be endangered.