BTS555

BTS555 INFINEON | Alldatasheet

Document overview

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• PDF pages: 16

Technical content

Features

• Overload protection
• Current limitation
• Short circuit protection
• Overtemperature protection
• Overvoltage protection (including load dump)
• Clamp of negative voltage at output
• Fast deenergizing of inductive loads 2)
• Low ohmic inverse current operation
• Diagnostic feedback with load current sense
• Open load detection via current sense
• Loss of Vbb protection3)
• Electrostatic discharge (ESD ) protection Application
• Power switch with current sense diagnostic feedback for 12 V and 24 V DC grounded loads
• Most suitable for loads with high inrush current like lamps and motors; all types of resistive and inductive loads
• Replaces electromechanical relays, fuses and discrete circuits General Description N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load current sense, integrated in Smart SIPMOS chip on chip technology. Providing embedded protective functions. IN Charge pump Level shifter Rectifier Limit for unclamped ind. loads Gate protection Current limit Overvoltage protection + Vbb PROFET  OUT 3 & Tab 1, 5 Load GND Load Output Voltage detection RIS IS I IS IL VIS I IN Logic GND Voltage sensor Voltage source Current Sense LogicESD Temperature sensor R bb VIN Due to the different lead frame geometry Ron @25°C is 0.3 mΩ higher in staggered than in straight version, and accordingly for other temperatures. With additional external diode. 3) Additional external diode required for energized inductive loads (see page 9). Product Summary Overvoltage protection Vbb(AZ) 62 V Output clamp VON(CL) 44 V Operating voltage Vbb(on) 5.0 ... 34 V On-state resistance R ON 1) 2.5 mΩ Load current (ISO) IL(ISO) 165 A Short circuit current limitation IL(SCp) 520 A Current sense ratio I L : IIS 30 000 TO-218AB/5 TO-218AB-5-1 Straight leads Staggered leads

Infineon Technologies AG 2 2003-Oct-01 Pin Symbol Function 1 OUT O Output to the load. The pins 1 and 5 must be shorted with each other especially in high current applications!4)

2 IN I Input, activates the power switch in case of short to ground

3 V bb + Positive power supply voltage, the tab is electrically connected to this pin. In high current applications the tab should be used for the Vbb connection instead of this pin5).

4 IS S Diagnostic feedback providing a sense current proportional to the load

current; zero current on failure (see Truth Table on page 7) 5 OUT O Output to the load. The pins 1 and 5 must be shorted with each other especially in high current applications!4) Maximum Ratings at Tj = 25 °C unless otherwise specified Parameter Symbol Values Unit Supply voltage (overvoltage protection see page 4) Vbb 40 V Supply voltage for full short circuit protection, (EAS limitation see diagram on page 9) Tj,start =-40 .+150°C: Vbb 34 V Load current (short circuit current, see page 5) IL self-limited A Load dump protection VLoadDump = U A + Vs, U A = 13.5 V R I6) = 2 Ω , R L = 0.1 Ω , td = 200 ms, IN, IS = open or grounded VLoad dump7) 80 V Operating temperature range Storage temperature range Tj Tstg -40 ...+150 -55 ...+150 Power dissipation (DC), TC ≤ 25 °C Ptot 360 W Inductive load switch-off energy dissipation, single pulse Vbb = 12V, Tj,start = 150°C, TC = 150°C const., IL = 20 A, ZL = 15 mH, 0 Ω , see diagrams on page 10 EAS 3J Electrostatic discharge capability (ESD) Human Body Model acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993, C = 100 pF, R = 1.5 kΩ VESD 4.0 kV Current through input pin (DC) Current through current sense status pin (DC) see internal circuit diagrams on page 7 and 8 IIN IIS +15 , -250 +15 , -250 mA 4) Not shorting all outputs will considerably increase the on-state resistance, reduce the peak current capability and decrease the current sense accuracy 5) Otherwise add up to 0.5 mΩ (depending on used length of the pin) to the RON if the pin is used instead of the tab. 6) R I = internal resistance of the load dump test pulse generator. 7) VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839.

Infineon Technologies AG 3 2003-Oct-01 Thermal Characteristics Parameter and Conditions Symbol Values Unit min typ max Thermal resistance chip - case : R thJC8) -- -- 0.35 K/W junction - ambient (free air): R thJA -- 30 --

Electrical Characteristics

Parameter and Conditions Symbol Values Unit at Tj = -40 ... +150 °C, Vbb = 12 V unless otherwise specified min typ max Load Switching Capabilities and Characteristics On-state resistance (Tab to pins 1,5, see measurement circuit page 7) IL = 30 A, Tj = 25 °C: VIN = 0, IL = 30 A, Tj = 150 °C: R ON 1.9 3.3 2.5 4.0 m Ω Vbb = 6 V9), IL = 20 A, Tj = 150 °C: R ON(Static) -- 4.6 9.0 Nominal load current10) (Tab to pins 1,5) ISO 10483-1/6.7: VON = 0.5 V, Tc = 85 °C 11) IL(ISO) 128 165 -- A Maximum load current in resistive range (Tab to pins 1,5) VON = 1.8 V, Tc = 25 °C: see diagram on page 13 VON = 1.8 V, Tc = 150 °C: IL(Max) 520 360 A Turn-on time12) IIN to 90% VOUT : Turn-off time I IN to 10% VOUT : ton toff 120 600 200 µs Slew rate on 12) (10 to 30% VOUT ) R L = 1 Ω dV/dton 0.3 0.5 0.8 V/ µs Slew rate off 12) (70 to 40% VOUT ) R L = 1 Ω -dV/dtoff 0.3 0.7 1 V/ µs 8) Thermal resistance RthCH case to heatsink (about 0.25 K/W with silicone paste) not included! 9) Decrease of Vbb below 10 V causes slowly a dynamic increase of RON to a higher value of RON(Static). As long as VbIN > VbIN(u) max, RON increase is less than 10 % per second for TJ < 85 °C. 10) not subject to production test, specified by design 11) TJ is about 105°C under these conditions. 12) See timing diagram on page 14.

Infineon Technologies AG 4 2003-Oct-01 Parameter and Conditions Symbol Values Unit at Tj = -40 ... +150 °C, Vbb = 12 V unless otherwise specified min typ max Inverse Load Current Operation On-state resistance (Pins 1,5 to pin 3) VbIN = 12 V, IL = - 30 A Tj = 25 °C: see diagram on page 10 Tj = 150 °C: R ON(inv) 1.9 3.3 2.5 4.0 m Ω Nominal inverse load current (Pins 1,5 to Tab) VON = -0.5 V, Tc = 85 °C11 IL(inv) 128 165 -- A Drain-source diode voltage (Vout > Vbb) IL = - 20 A, IIN = 0, Tj = +150°C -VON -- 0.6 0.7 V Operating Parameters Operating voltage (VIN = 0) 13) Vbb(on) 5.0 -- 34 V Undervoltage shutdown 14) VbIN(u) 1.5 3.0 4.5 V Undervoltage start of charge pump see diagram page 15 VbIN(ucp) 3.0 4.5 6.0 V Overvoltage protection15) Tj =-40°C: Ibb = 15 mA Tj = 25...+150°C: VbIN(Z) 60 V Standby current Tj =-40...+25°C: IIN = 0 T j = 150°C: Ibb(off) -- µA 13) If the device is turned on before a Vbb-decrease, the operating voltage range is extended down to VbIN(u). For the voltage range 0..34 V the device is fully protected against overtemperature and short circuit. 14) VbIN = Vbb - VIN see diagram on page 7. When VbIN increases from less than VbIN(u) up to VbIN(ucp) = 5 V (typ.) the charge pump is not active and VOUT ≈Vbb - 3 V. 15) See also VON(CL) in circuit diagram on page 8.

Infineon Technologies AG 5 2003-Oct-01 Parameter and Conditions Symbol Values Unit at Tj = -40 ... +150 °C, Vbb = 12 V unless otherwise specified min typ max Protection Functions16) Short circuit current limit (Tab to pins 1,5)17) VON = 12 V, time until shutdown max. 300 µs Tc =-40°C: Tc =25°C: Tc =+150°C: IL(SCp) 200 200 300 320 400 480 550 620 650 A Short circuit shutdown delay after input current positive slope, VON > VON(SC) min. value valid only if input "off-signal" time exceeds 30 µs td(SC) -- 300 µs Output clamp 18) IL= 40 mA: (inductive load switch off) -VOUT(CL) 14 20 V Output clamp (inductive load switch off) at VOUT = Vbb - VON(CL) (e.g. overvoltage) IL= 40 mA VON(CL) 44 47 V Short circuit shutdown detection voltage (pin 3 to pins 1,5) VON(SC) 6 -- V Thermal overload trip temperature Tjt 150 -- -- °C Thermal hysteresis ∆Tjt -- 10 -- K Reverse Battery Reverse battery voltage 19) - Vbb -- -- 16 V On-state resistance (Pins 1,5 to pin 3) Tj = 25 °C: Vbb = -12V, VIN = 0, IL = - 30 A, R IS = 1 kΩ Tj = 150 °C: R ON(rev) -- 2.3 3.9 3.0 4.7 m Ω Integrated resistor in Vbb line Tj = 25 °C: Tj = 150 °C: R bb 90 105 110 125 135 150 Ω 16) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not designed for continuous repetitive operation. 17 ) Short circuit is a failure mode. The device is not designed to operate continuously into a short circuit by permanent resetting the short circuit latch function. The lifetime will be reduced under such conditions. 18) This output clamp can be "switched off" by using an additional diode at the IS-Pin (see page 8). If the diode is used, VOUT is clamped to Vbb- VON(CL) at inductive load switch off. 19) The reverse load current through the intrinsic drain-source diode has to be limited by the connected load (as it is done with all polarity symmetric loads). Note that under off-conditions (IIN = IIS = 0) the power transistor is not activated. This results in raised power dissipation due to the higher voltage drop across the intrinsic drain-source diode. The temperature protection is not active during reverse current operation! Increasing reverse battery voltage capability is simply possible as described on page 9.

Infineon Technologies AG 6 2003-Oct-01 Parameter and Conditions Symbol Values Unit at Tj = -40 ... +150 °C, Vbb = 12 V unless otherwise specified min typ max Diagnostic Characteristics Current sense ratio, IL = 120 A,Tj =-40°C: static on-condition, Tj =25°C: kILIS = IL : IIS, Tj =150°C: VON < 1.5 V20), IL = 30 A,Tj =-40°C: VIS <VOUT - 5 v, Tj =25°C: VbIN > 4.0 V Tj =150°C: (see diagram on page 10) IL = 16 A,Tj =-40°C: Tj =25°C: Tj =150°C: IL = 12 A,Tj =-40°C: Tj =25°C: Tj =150°C: kILIS 25 000 26 000 24 000 25 000 25 000 23 000 24 000 24 000 23 000 23 000 23 000 23 000 29 000 28 500 26 500 31 200 30 200 27 200 33 500 31 500 27 500 40 500 40 500 29 000 34 000 32 000 29 000 40 000 35 000 31 500 48 000 40 000 32 000 61 000 45 000 34 000 IIS=0 by IIN =0 (e.g. during deenergizing of inductive loads): Sense current saturation IIS,lim 6.5 -- -- mA Current sense leakage current IIN = 0, VIS = 0: V IN = 0, VIS = 0, IL ≤ 0: IIS(LL) IIS(LH) 0.5 µA Current sense settling time21) ts(IS) -- 500 µs Overvoltage protection Tj =-40°C: Ibb = 15 mA Tj = 25...+150°C: VbIS(Z) 60 V Input Input and operating current (see diagram page 13) IN grounded (VIN = 0) IIN(on) -- 0.8 1.5 mA Input current for turn-off22) IIN(off) -- -- 40 µA 20) If VON is higher, the sense current is no longer proportional to the load current due to sense current saturation, see IIS,lim . 21) not subject to production test, specified by design 22) We recommend the resistance between IN and GND to be less than 0.5 kΩ for turn-on and more than 500kΩ for turn-off. Consider that when the device is switched off (IIN = 0) the voltage between IN and GND reaches almost Vbb.

Infineon Technologies AG 7 2003-Oct-01 Truth Table Input current Output Current Sense Remark level level I IS Normal operation L H L H nominal =IL / kilis, up to IIS=IIS,lim Very high load current H H I IS, lim up to VON =VON(Fold back) IIS no longer proportional to IL Current- limitation H H 0 V ON > VON(Fold back) if VON >VON(SC) , shutdown will occure Short circuit to GND L H L L Over- temperature L H L L Short circuit to Vbb L H H H <nominal 23) Open load L H Z24) H Negative output voltage clamp L L 0 Inverse load current L H H H L = "Low" Level H = "High" Level Overtemperature reset via input: I IN=low and Tj < Tjt (see diagram on page14) Short circuit to GND: Shutdown remains latched until next reset via input (see diagram on page 14) 23) Low ohmic short to Vbb may reduce the output current IL and can thus be detected via the sense current IIS. 24) Power Transistor "OFF", potential defined by external impedance. Terms PROFET V IN IS OUT bb VIN IIS IIN Vbb Ibb IL VOUT VON 1,5 RISVIS VbIN RIN DS VbIS Two or more devices can easily be connected in parallel to increase load current capability. R ON measurement layout (straight leads) SenseV force contacts Out Forcebb contacts 5.5 mm contacts (both out pins parallel)

Infineon Technologies AG 8 2003-Oct-01 Input circuit (ESD protection) IN ZD INI Vbb RbbV Z,IN VbIN VIN When the device is switched off (IIN = 0) the voltage between IN and GND reaches almost Vbb. Use a mechanical switch, a bipolar or MOS transistor with appropriate breakdown voltage as driver. V Z,IN = 66 V (typ). Current sense status output IS ISR ISI ZD ISV bbV bbR Z,ISV VZ,IS = 66 V (typ.), R IS = 1 kΩ nominal (or 1 kΩ /n, if n devices are connected in parallel). IS = IL/kilis can be only driven by the internal circuit as long as Vout - VIS > 5V. If you want to measure load currents up to IL(M), R IS should be less than ilisML bb KI VV − . Note: For large values of R IS the voltage VIS can reach almost Vbb. See also overvoltage protection. If you don't use the current sense output in your application, you can leave it open. Short circuit detection Fault Condition: VON > VON(SC) (6 V typ.) and t> td(SC) (80 ...300 µs). Short circuit detection Logic unit + Vbb OUT VON Inductive and overvoltage output clamp + Vbb OUT PROFET VZ1 VON DS IS VOUT VZG VON is clamped to VON(Cl) = 42 V typ. At inductive load switch-off without DS, VOUT is clamped to VOUT(CL) = -17 V typ. via VZG . With DS, VOUT is clamped to Vbb - VON(CL) via VZ1. Using DS gives faster deenergizing of the inductive load, but higher peak power dissipation in the PROFET. In case of a floating ground with a potential higher than 19V referring to the OUT – potential the device will switch on, if diode DS is not used. Overvoltage protection of logic part + Vbb VOUT IN bbR Signal GND Logic PROFET VZ,IS RIS INR IS VZ,IN RV VZ,VIS R bb = 120 Ω typ., VZ,IN = VZ,IS = 66 V typ., R IS = 1 kΩ nominal. Note that when overvoltage exceeds 71 V typ. a voltage above 5V can occur between IS and GND, if R V, VZ,VIS are not used.

Infineon Technologies AG 9 2003-Oct-01 Reverse battery protection Logic IS IN ISR VR OUT LR Power GNDSignal GND Vbb- Power TransistorINR bbR D SD R V ≥ 1 kΩ, R IS = 1 kΩ nominal. Add R IN for reverse battery protection in applications with Vbb above

16 V19); recommended value: 1

+ 1 R IS + 1 R V 0.1A |Vbb| - 12V if DS is not used (or 1 R IN = 0.1A |Vbb| - 12V if DS is used). To minimize power dissipation at reverse battery operation, the summarized current into the IN and IS pin should be about 120mA. The current can be provided by using a small signal diode D in parallel to the input switch, by using a MOSFET input switch or by proper adjusting the current through R IS and R V. Vbb disconnect with energized inductive load Provide a current path with load current capability by using a diode, a Z-diode, or a varistor. (VZL < 72 V or VZb < 30 V if RIN=0). For higher clamp voltages currents at IN and IS have to be limited to 250 mA. Version a: PROFET V IN OUT IS bb Vbb VZL Version b: PROFET V IN OUT IS bbVbb VZb Note that there is no reverse battery protection when using a diode without additional Z-diode VZL, VZb. Version c: Sometimes a neccessary voltage clamp is given by non inductive loads RL connected to the same switch and eliminates the need of clamping circuit: PROFET V IN OUT IS bbVbb RL

Infineon Technologies AG 10 2003-Oct-01 Inverse load current operation PROFET V IN OUT IS bb Vbb VOUT - IL RIS VIS VIN - + IIS The device is specified for inverse load current operation (VOUT > Vbb > 0V). The current sense feature is not available during this kind of operation (IIS = 0). With IIN = 0 (e.g. input open) only the intrinsic drain source diode is conducting resulting in considerably increased power dissipation. If the device is switched on (V IN = 0), this power dissipation is decreased to the much lower value R ON(INV) * I2 (specifications see page 4). Note: Temperature protection during inverse load current operation is not possible! Inductive load switch-off energy dissipation PROFET V IN OUT IS bb E E E EAS bb L R ELoad L RL {Z L RIS I IN Vbb i (t)L Energy stored in load inductance: EL = 1/2·L·I2 L While demagnetizing load inductance, the energy dissipated in PROFET is EAS = Ebb + EL - ER = VON(CL)·iL(t) dt, with an approximate solution for RL > 0 Ω : EAS = IL· L 2·R L (Vbb + |VOUT(CL)|) ln (1+ IL·R L |VOUT(CL)| ) Maximum allowable load inductance for a single switch off L = f (IL ); Tj,start = 150°C, Vbb = 12 V, RL = 0 Ω L [µH] I L [A] Externally adjustable current limit If the device is conducting, the sense current can be used to reduce the short circuit current and allow higher lead inductance (see diagram above). The device will be turned off, if the threshold voltage of T2 is reached by I S*RIS . After a delay time defined by R V*CV T1 will be reset. The device is turned on again, the short circuit current is defined by IL(SC) and the device is shut down after td(SC) with latch function. PROFET IS IN ISR VR Power GND Signal GND Vbb OUT VC loadR T1 T2 IN Signal Vbb 100 1000 10000 100000 1000000 1 10 100 1000

Infineon Technologies AG 11 2003-Oct-01 Options Overview Type BTS 6510 550P 650P 555 Overtemperature protection with hysteresis X X X Tj >150 °C, latch function25) Tj >150 °C, with auto-restart on cooling X X X Short circuit to GND protection with overtemperature shutdown switches off when VON >6 V typ. (when first turned on after approx. 180 µs) X X X Overvoltage shutdown - - - Output negative voltage transient limit to Vbb - VON(CL) X X X to VOUT = -15 V typ X26) X26) X26) 25) Latch except when Vbb -VOUT < VON(SC) after shutdown. In most cases VOUT = 0 V after shutdown (VOUT ≠ 0 V only if forced externally). So the device remains latched unless Vbb < VON(SC) (see page 5). No latch between turn on and td(SC). 26) Can be "switched off" by using a diode DS (see page 8) or leaving open the current sense output.

Infineon Technologies AG 12 2003-Oct-01 Characteristics Current sense versus load current: IIS = f(IL) IIS [mA] IL [A] Current sense ratio: KILIS = f(IL), TJ = -40 °C kilis IL [A] Current sense ratio: KILIS = f(IL), TJ = 25 °C kilis IL [A] Current sense ratio: KILIS = f(IL), TJ = 150 °C kilis IL [A] 0 50 100 150 max min 20000 25000 30000 35000 40000 45000 50000 55000 60000 65000 0 50 100 150 typ max min 20000 25000 30000 35000 40000 45000 50000 55000 60000 65000 0 50 100 150 typ max min 20000 25000 30000 35000 40000 45000 50000 55000 60000 65000 0 50 100 150 typ max min

Infineon Technologies AG 13 2003-Oct-01 Typ. current limitation characteristic IL = f (VON, Tj ) IL [A] 100 200 300 400 500 600 700 800 900 1000 01 0 1 5 2 0 Tj = -40°C 25°C 85°C 150°C VON(FB) VON>VON(SC) only for t < td(SC) (otherwise immediate shutdown) V ON [V] In case of VON > VON(SC) (typ. 6 V) the device will be switched off by internal short circuit detection. Typ. on-state resistance R ON = f (Vbb, Tj ); IL = 30 A; VIN = 0 R ON [mOhm] 0 5 10 15 20 static dynamic Tj = 150°C 85°C 25°C -40°C Vbb [V] Typ. input current IIN = f (VbIN), VbIN = Vbb - VIN IIN [mA] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 2 04 06 08 0 VbIN [V]

Infineon Technologies AG 16 2003-Oct-01 Package and Ordering Code All dimensions in mm TO-218AB/5 Option E3146 Ordering code BTS555 E3146 Q67060-S6953A3 TO-218AB/5-1 Ordering code BTS555 Q67060-S6954 0.4 4.5 10.16=x4 2.54 1.1 4.9 2.54 8.2 3.5 20.3±0.2+11 M ±0.3 +0.150.5 +0.312.5 2-0.02 +0.1 16.3+0.15 -0.25±0.514 3) +0.34.04 ±0.210.8 14.8 ±0.215 radii not dimensioned max. 0.2 Punch direction, burr max. 0.04 Dip tinning Max. 15.5 by dip tinning press burr max. 0.05 ±0.3 ±0.511.5 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81669 München © Infineon Technologies AG 2001 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life- support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life- support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.