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Data Sheet, V1.0, January 2004 N e v e r s t o p t h i n k i n g . BTS 5434G Smart High-Side Power Switch PROFET Four Channels, 60 mΩ Automotive Power

Smart High-Side Power Switch BTS 5434G Table of Contents Page Data Sheet V1.0, 2004-01-23 4.1.1 4.1.2 4.1.3 4.1.4 4.2.1 4.2.2 4.2.3 4.2.4 4.2.5 4.3.1 4.3.2 4.3.3 4.3.4

V1.0, 2004-01-23 Type Ordering Code Package BTS 5434G Q67060-S6157 P-DSO-28-19 Smart High-Side Power Switch PROFET BTS 5434G Product Summary The BTS 5434G is a four channel high-side power switch in P-DSO-28-19 package providing embedded protective functions. The power transistor is built by a N-channel vertical power MOSFET with charge pump. The device is monolithically integrated in Smart SIPMOS technology. Basic Features

Very low standby current
3.3 V and 5 V compatible logic pins
Improved electromagnetic compatibility (EMC)
Stable behavior at under voltage
Logic ground independent from load ground
Secure load turn-off while logic ground disconnected
Optimized inverse current capability Operating voltage Vbb(on) 4.5 .. 28 V Over voltage protection Vbb(AZ) 41 V On-State resistance RDS(ON) 60 mΩ Nominal load current (one channel active) IL(nom) 3.4 A Current limitation IL(LIM) 23 A Current limitation repetitive IL(SCr) 6 A Standby current for whole device with load Ibb(OFF) 5 µA P-DSO-28-19

Smart High-Side Power Switch BTS 5434G Data Sheet V1.0, 2004-01-23 Protective Functions

Reverse battery protection without external components
Short circuit protection
Overload protection
Multi-step current limitation
Thermal shutdown with restart
Thermal restart at reduced current limitation
Over voltage protection without external resistor
Loss of ground protection
Electrostatic discharge protection (ESD) Diagnostic Functions
Enhanced IntelliSense signal for each channel
Enable function for diagnosis pins (IS1 .. IS4)
Proportional load current sense signal by current source
High accuracy of current sense signal at wide load current range
Open load detection in ON-state by load current sense
Open load detection in OFF-state by voltage source
Feedback on over temperature and current limitation in ON-state

Applications

µC compatible high-side power switch with diagnostic feedback for 12 V grounded loads
All types of resistive, inductive and capacitive loads
Suitable for loads with high inrush currents, so as lamps
Suitable for loads with low currents, so as LEDs
Replaces electromechanical relays, fuses and discrete circuits

Smart High-Side Power Switch BTS 5434G Overview Data Sheet V1.0, 2004-01-23 Overview The BTS 5434G is a four channel high-side power switch (four times 60 mΩ) in P-DSO-28-19 package providing embedded protective functions. The Enhanced IntelliSense pins IS1 to IS4 provide a sophisticated diagnostic feedback signal including current sense function and open load in off state. The diagnosis signals can be switched on and off by the sense enable pins SENA and SENB. Integrated ground resistors as well as integrated resistors at each input pin (IN1, IN2, IN3, IN4, SEN) reduce external components to a minimum. The power transistor is built by a N-channel vertical power MOSFET with charge pump. The inputs are ground referenced CMOS compatible. The device is built by two dual channel chips, monolithically integrated in Smart SIPMOS technology. 1.1 Block Diagram Figure 1 Block Diagram OUT4 VBB OUT1 OUT3 channel 3,4 (Chip B) control and protection circuit equivalent to channel 1,2 OUT2 IN3 IN4 IS3 IS4 SENB channel 1,2 (Chip A) internal power supply open load detection logic gate control charge pump clamp for inductive load multi step load current limitation load current sense temperature sensor ESD protection IN1 IS1 SENA IN2 IS2 GNDB RGND GNDA RGND

Smart High-Side Power Switch BTS 5434G Overview Data Sheet V1.0, 2004-01-23 1.2 Terms Following figure shows all terms used in this data sheet. Figure 2 Terms Chip B Chip A Terms4ch.emf IIN1 VIN1 OUT1 IIN2 VIN2 VIN4 IIS1 VIS3 IIS2 Vbb VIS4 ISENB I L1 VOUT2 VOUT1 VDS2 VDS1 I L2 Ibb IN1 IN2 IS1 IS2 SENB VBB OUT2 IIS3 IIS4 IS3 IS4 VIS1 VIS2 VSENA VIN3 IIN3 IIN4 IN3 IN4 ISENA SENA VSENB OUT3 I L3 I L4 OUT4 VOUT4 VOUT3 VDS4 VDS3 GNDA IGND GNDB BTS 5434G

Smart High-Side Power Switch BTS 5434G Pin Configuration Data Sheet V1.0, 2004-01-23 Pin Configuration 2.1 Pin Assignment BTS 5434G Figure 3 Pin Configuration P-DSO-28-19 2.2 Pin Definitions and Functions Pin Symbol I/O OD Function IN1 I Input signal for channel 1 IN2 I Input signal for channel 2 IN3 I Input signal for channel 3 IN4 I Input signal for channel 4 IS1 O Diagnosis output signal channel 1 IS2 O Diagnosis output signal channel 2 IS3 O Diagnosis output signal channel 3 IS4 O Diagnosis output signal channel 4 (top view) OUT1 OUT1 OUT1 OUT2 VBB OUT2 GNDA IN1 IS1 IS2 VBB IN2 SENA OUT3 OUT3 OUT3 OUT2 VBB OUT4 OUT4 OUT4 VBB GNDB IN3 IS3 IS4 IN4 SENB

Smart High-Side Power Switch BTS 5434G Pin Configuration Data Sheet V1.0, 2004-01-23 SENA I Sense Enable input for channel 1&2 SENB I Sense Enable input for channel 3&4 25, 26, 27 OUT1 O Protected high-side power output channel 1 22, 23, 24 OUT2 O Protected high-side power output channel 2 19, 20, 21 OUT3 O Protected high-side power output channel 3 16, 17, 18 OUT4 O Protected high-side power output channel 4 GNDA Ground connection chip A GNDB Ground connection chip B 1, 14, 15, VBB Positive power supply for logic supply as well as output power supply Pin Symbol I/O OD Function

Smart High-Side Power Switch BTS 5434G

Electrical Characteristics

V1.0, 2004-01-23 3.1 Maximum Ratings Stresses above the ones listed here may affect device reliability or may cause permanent damage to the device. Unless otherwise specified: Tj = 25 °C Pos. Parameter Symbol Limit Values Unit Test Conditions min. max. Supply Voltage 3.1.1 Supply voltage Vbb -16 V 3.1.2 Supply voltage for full short circuit protection (single pulse) Vbb(SC) V L = 8 µH, R = 0.2 Ω 1) 3.1.3 Voltage at power transistor VDS V 3.1.4 Supply Voltage for Load Dump protection Vbb(LD) V RI = 2 Ω 2) RL = 6.8 Ω Power Stages 3.1.5 Load current IL IL(LIM) A - 3) 3.1.6 Maximum energy dissipation single pulse EAS 0.58 J IL(0) = 2 A 4) Tj(0) = 150°C 3.1.7 Power dissipation (DC) Ptot 1.7 W Ta = 85 °C 5) Tj ≤150 °C Logic Pins 3.1.8 Voltage at input pin VIN -16 V t ≤2 min 3.1.9 Current through input pin IIN -2.0 -8.0 2.0 mA t ≤2 min 3.1.10 Voltage at sense enable pin VSEN -16 V t ≤2 min 3.1.11 Current through sense enable pin ISEN -2.0 -8.0 2.0 mA t ≤2 min 3.1.12 Current through sense pin IIS -25 mA

Smart High-Side Power Switch BTS 5434G V1.0, 2004-01-23 Temperatures 3.1.13 Junction Temperature Tj -40 150 3.1.14 Dynamic temperature increase while switching ∆Tj 3.1.15 Storage Temperature Tstg -55 150 ESD Susceptibility 3.1.16 ESD susceptibility HBM IN, SEN IS OUT VESD kV according to EIA/JESD 22-A 114B 1) R and L describe the complete circuit impedance including line, contact and generator impedances 2) Load Dump is specified in ISO 7636, RI is the internal resistance of the Load Dump pulse generator 3) Current limitation is a protection feature. Operation in current limitation is considered as “outside” normal operating range. Protection features are not designed for continuous repetitive operation. 4) Pulse shape represents inductive switch off: IL(t) = IL(0) * (1 - t / tpeak); 0 < t < tpeak 5) Device mounted on PCB (50 mm x 50 mm x 1.5mm epoxy, FR4) with 6 cm2 copper heatsinking area (one layer, 70 µm thick) for Vbb connection. PCB is vertical without blown air. Unless otherwise specified: Tj = 25 °C Pos. Parameter Symbol Limit Values Unit Test Conditions min. max.

Smart High-Side Power Switch BTS 5434G Block Description and Electrical Characteristics Data Sheet V1.0, 2004-01-23 4.1.4 Unless otherwise specified: Vbb = 9 V to 16 V, Tj = -40 °C to +150 °C, typical values: Vbb = 13.5 V, Tj = 25 °C Pos. Parameter Symbol Limit Values Unit Test Conditions min. typ. max. General 4.1.1 Operating voltage Vbb 4.5 V VIN = 4.5 V RL = 12 Ω VDS < 0.5 V 4.1.2 Operating current one channel active all channels active IGND 1.8 7.2 mA VIN = 5 V 4.1.3 Standby current for whole device with load Ibb(OFF) µA VIN = 0 V VSEN = 0 V Tj = 25°C Tj = 85°C1) Tj = 150°C Output characteristics 4.1.4 On-State resistance per channel RDS(ON) 115 mΩ IL = 2.5 A Tj = 25 °C Tj = 150 °C 4.1.5 Output voltage drop limitation at small load currents VDS(NL) mV IL < 0.25 A 4.1.6 Nominal load current per channel one channel active four channels active IL(nom) 3.4 1.9 A Ta = 85 °C Tj ≤150 °C 2) 3) 4.1.7 Output clamp VOUT(CL) -16 -13 -10 V IL = 40 mA 4.1.8 Output leakage current per channel IL(OFF) 0.1 µA VIN = 0 V 4.1.9 Inverse current capability -IL(inv) A

Smart High-Side Power Switch BTS 5434G Block Description and Electrical Characteristics Data Sheet V1.0, 2004-01-23 Note: Characteristics show the deviation of parameter at the given supply voltage and junction temperature. Typical values show the typical parameters expected from manufacturing. Thermal Resistance

4.1.10 Junction to case

1)

4.1.11 Junction to ambient

1)2) Input characteristics

4.1.12 Input resistor

1.8 3.5 5.5 kΩ

4.1.13 L-input level

VIN(L) -0.3 1.0 V

4.1.14 H-input level

VIN(H) 2.5 5.7 V

4.1.15 L-input current

IIN(L) µA VIN = 0.4 V

4.1.16 H-input current

IIN(H) µA VIN = 5 V Timings

4.1.17 Turn-on time to

90% Vbb tON 100 250 µs RL = 12 Ω Vbb = 13.5 V

4.1.18 Turn-off time to

10% Vbb tOFF 120 250 µs RL = 12 Ω Vbb = 13.5 V 4.1.19 slew rate 30% to 70% Vbb dV/ dtON 0.1 0.25 0.5 V/µs RL = 12 Ω Vbb = 13.5 V 4.1.20 slew rate 70% to 30% Vbb -dV/ dtOFF 0.1 0.25 0.5 V/µs RL = 12 Ω Vbb = 13.5 V 1) Not subject to production test, specified by design 2) Device mounted on PCB (50 mm x 50 mm x 1.5mm epoxy, FR4) with 6 cm2 copper heatsinking area (one layer, 70 µm thick) for Vbb connection. PCB is vertical without blown air. 3) Not subject to production test, parameters are calculated from RDS(ON) and Rth Unless otherwise specified: Vbb = 9 V to 16 V, Tj = -40 °C to +150 °C, typical values: Vbb = 13.5 V, Tj = 25 °C Pos. Parameter Symbol Limit Values Unit Test Conditions min. typ. max.

Smart High-Side Power Switch BTS 5434G Data Sheet V1.0, 2004-01-23 4.2.2 Reverse Polarity Protection In case of reverse polarity, the intrinsic body diode causes power dissipation. Additional power is dissipated by the integrated ground resistor. Use following formula for estimation of total power dissipation Pdiss(rev) in reverse polarity mode. The reverse current through the intrinsic body diode has to be limited by the connected load. The current through sense pins IS1 to IS4 has to be limited (please refer to maximum ratings on Page 9). The current through the ground pin (GND) is limited internally by RGND. The over-temperature protection is not active during reverse polarity. 4.2.3 Over Voltage Protection In addition to the output clamp for inductive loads as described in Section 4.1.3, there is a clamp mechanism for over voltage protection. Because of the integrated ground resistor, over voltage protection does not require external components. As shown in Figure 12, in case of supply voltages greater than Vbb(AZ), the power transistor switches on and the voltage across logic part is clamped. As a result, the internal ground potential rises to Vbb - Vbb(AZ). Due to the ESD zener diodes, the potential at pin IN1, IN2 and SEN rises almost to that potential, depending on the impedance of the connected circuitry. Figure 12 Over Voltage Protection 4.2.4 Loss of Ground Protection In case of complete loss of the device ground connections, but connected load ground, the BTS 5434G securely changes to or keeps in off state. Pdiss(rev) VDS(rev) IL all channels

2 Vbb

OverVoltage.emf VOUT RGND logic GND IN IS SEN RSEN RIN ZDESD ZDAZ internal ground

Smart High-Side Power Switch BTS 5434G Data Sheet V1.0, 2004-01-23 4.2.5 Unless otherwise specified: Vbb = 9 V to 16 V, Tj = -40 °C to +150 °C , typical values: Vbb = 13.5 V, Tj = 25 °C Pos. Parameter Symbol Limit Values Unit Test Conditions min. typ. max. Over Load Protection 4.2.1 Load current limitation IL(LIM) A VDS = 7 V A VDS = 14 V 4.2.2 Repetitive short circuit current limitation IL(SCr) A Tj = Tj(SC) 1) Not subject to production test, specified by design 4.2.3 Initial short circuit shut down time tOFF(SC) 0.5 ms TjStart = 25 °C 1) 4.2.4 Thermal shut down temperature Tj(SC) 150 170 4.2.5 Thermal hysteresis ∆Tj K -1) Reverse Battery 4.2.6 Drain-Source diode voltage (VOUT > Vbb) -VDS(rev) 900 mV IL = -3.5 A Vbb = -13.5 V Tj = 150°C 4.2.7 Reverse current through each GND pin -IGND mA Vbb = -13.5 V 1) Ground Circuit 4.2.8 Integrated Resistors in GND lines RGND 115 220 350 Ω Over Voltage 4.2.9 Over voltage protection Vbb(AZ) V Ibb = 4 mA Loss of GND

4.2.10 Output leakage

IL(GND) mA IIN = 0, ISEN = 0, IIS = 0, IGND = 0 1) 2) 2) no connection at these pins

Smart High-Side Power Switch BTS 5434G Data Sheet V1.0, 2004-01-23 4.3 Diagnosis For diagnosis purpose, the BTS 5434G provides an Enhanced IntelliSense signal at pins IS1 to IS4. This means in detail, the current sense signal IIS, a proportional signal to the load current (ratio kILIS = IL / IIS), is provided in ON-state as long as no failure mode occurs. In case of open load in OFF-state, the voltage VIS(fault) is fed to the diagnosis pin. Figure 13 Block Diagram: Diagnosis Table 1 Truth Table Operation Mode Input Level Output Level Diagnostic Output SEN = H SEN = L Normal Operation (OFF) L Z Z Z Short Circuit to GND Z Z Z Over Temperature Z Z Z Short Circuit to Vbb Vbb VIS = VIS(fault) Z Open Load < VOUT(OL) > VOUT(OL) Z VIS = VIS(fault) Z Z channel 1 channel 2 gate control IIS2 OUT2 IIS1 OUT1 SEN IS1 µC IN1 VOUT(OL) VIS(fault) RIN1 RSEN gate control IN2 IS2 RIN2 diagnosis GND ROL SOL load VBB Sense.emf RIS1 RIS2 Rlim Rlim Diagnosis equivalent for channel 3 and 4

Smart High-Side Power Switch BTS 5434G Data Sheet V1.0, 2004-01-23 4.3.1 ON-State Diagnosis The standard diagnosis signal is a current sense signal proportional to the load current. The accuracy of the ratio (kILIS = IL / IIS) depends on the temperature. Please refer to following Figure 14 for details. Usually a resistor RIS is connected to the current sense pin. It is recommended to use sense resistors RIS > 500 Ω. A typical value is 4.7 kΩ. Figure 14 Current sense ratio kILIS Normal Operation (ON) H ~Vbb IIS = IL / kILIS Z Current Limitation < Vbb Z Z Short Circuit to GND << Vbb Z Z Over Temperature Z Z Z Short Circuit to Vbb Vbb IIS < IL / kILIS Z Open Load ~Vbb Z Z L = Low Level, H = High Level, Z = high impedance, potential depends on leakage currents and external circuit 1) The curves show the behavior based on characterization data. The marked points are guaranteed in this Data Table 1 Truth Table Operation Mode Input Level Output Level Diagnostic Output SEN = H SEN = L 1000 2000 3000 4000 5000 6000 7000 8000 0.5 1.5 2.5 3.5 kILIS IL /A dummy Tj = 150°C dummy Tj = -40°C

Smart High-Side Power Switch BTS 5434G Data Sheet V1.0, 2004-01-23 For open load diagnosis in off state an external output pull-up resistor (ROL) is recommended. For calculation of the pull-up resistor, just the external leakage current Ileakage and the open load threshold voltage VOUT(OL) has to be taken into account. Ileakage defines the leakage current in the complete system e.g. caused by humidity. There is no internal leakage current from out to ground at BTS 5434G. Vbb(min) is the minimum supply voltage at which the open load diagnosis in off state must be ensured. To reduce the stand-by current of the system, an open load resistor switch (SOL) is recommended. 4.3.3 Sense Enable Function The diagnosis signals have to be switched on by a high signal at sense enable pin (SEN). See Figure 17 for details on the timing between SEN pin and diagnosis signal IIS. Please note that the diagnosis is disabled, when no signal is provided at pin SEN. Figure 17 Timing of Sense Enable Signal The SEN pin circuit is designed equal to the input pin. Please refer to Figure 5 for details. The resistors Rlim are recommended to limit the current through the sense pins IS1 to IS4 in case of reverse polarity and over voltage. Please refer to maximum ratings on Page 9. The stand-by current of the BTS 5434G is minimized, when both input pins (IN1 and IN2 or IN3 and IN4) and the according sense enable pin (SENA or SENB) are on low level. ROL Vbb(min) VOUT(OL,max) Ileakage tdIS(SEN) tsIS(SEN) t SEN.emf tsIS(SEN) t tdIS(SEN) IIS SEN

Smart High-Side Power Switch BTS 5434G Data Sheet V1.0, 2004-01-23 4.3.4 Unless otherwise specified: Vbb = 9 V to 16 V, Tj = -40 °C to +150 °C, VSEN = 5 V, typical values: Vbb = 13.5 V, Tj = 25 °C Pos. Parameter Symbol Limit Values Unit Test Conditions min. typ. max. Open Load at OFF-State 4.3.1 Open load detection threshold voltage VOUT(OL) 1.6 2.8 4.4 V 4.3.2 Sense signal in case of open load VIS(fault) 3.5 6.5 V VIN = 0 V VOUT = Vbb IIS = 1 mA 4.3.3 Sense signal current limitation IIS(LIM) mA VIN = 0 V VOUT = Vbb 4.3.4 Sense signal invalid after negative input slope td(fault) 1.2 ms VIN = 5 V to 0 V VOUT = Vbb 4.3.5 Fault signal settling time ts(fault) 200 µs VIN = 0 V VOUT = 0 V to > VOUT(OL) IIS = 1 mA Load Current Sense ON-State 4.3.6 Current sense ratio kILIS VIN = 5 V IL = 40 mA IL = 1.3 A IL = 2.2 A IL = 4.0 A 1000 2300 2410 2465 4035 3050 2920 2850 8000 3580 3380 3275 Tj = -40 °C IL = 40 mA IL = 1.3 A IL = 2.2 A IL = 4.0 A 1400 2465 2520 2580 3410 2920 2875 2870 6000 3275 3220 3160 Tj = 150 °C 4.3.7 Current sense voltage limitation VIS(LIM) 5.0 6.2 7.5 V IIS = 0.5 mA IL = 3.5 A 4.3.8 Current sense leakage/offset current IIS(LH) µA VIN = 5 V IL = 0 A

Smart High-Side Power Switch BTS 5434G Data Sheet V1.0, 2004-01-23 4.3.9 Current sense leakage, while diagnosis disabled IIS(dis) µA VSEN = 0 V IL = 3.5 A

4.3.10 Current sense settling

time to IIS static ±10% after positive input slope tsIS(ON) 300 µs VIN = 0 V to 5 V IL = 3.5 A

4.3.11 Current sense settling

time to IIS static ±10% after change of load current tsIS(LC) µs VIN = 5 V IL = 1.3 A to 2.2 A Sense Enable

4.3.12 Input resistance

1.8 3.5 5.5 kΩ

4.3.13 L-input level

VSEN(L) -0.3 1.0 V

4.3.14 H-input level

VSEN(H) 2.5 5.7 V

4.3.15 L-input current

ISEN(L) µA VSEN = 0.4 V

4.3.16 H-input current

ISEN(H) µA VSEN = 5 V

4.3.17 Current sense settling

tsIS(SEN) µs VSEN = 0 V to 5 V VIN = 0 V VOUT > VOUT(OL)

4.3.18 Current sense

tdIS(SEN) µs VSEN = 5 V to 0 V IL = 3.5 A RS = 5 kΩ 1) 1) Not subject to production test, specified by design Unless otherwise specified: Vbb = 9 V to 16 V, Tj = -40 °C to +150 °C, VSEN = 5 V, typical values: Vbb = 13.5 V, Tj = 25 °C Pos. Parameter Symbol Limit Values Unit Test Conditions min. typ. max.

Smart High-Side Power Switch BTS 5434G Package Outlines BTS 5434G Data Sheet V1.0, 2004-01-23 Package Outlines BTS 5434G 18.1-0.4 Index Marking 2.45 -0.1 7.6 10.3 ±0.3 -0.2 0.2 2.65 max -0.2 1.27 0.23 +0.09 0.1 0.4 0.35 x 45˚ +0.8 +0.15 0.35 8˚ max 0.2 28x 2) Does not include dambar protrusion of 0.05 max per side 1) Does not include plastic or metal protrusions of 0.15 max per side GPS05123 P-DSO-28-19 (Plastic Dual Small Outline Package) You can find all of our packages, sorts of packing and others in our Infineon Internet Page “Products”: http://www.infineon.com/products. Dimensions in mm SMD = Surface Mounted Device

Smart High-Side Power Switch BTS 5434G

Revision History

V1.0 04-01-23 initial version

Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München, Germany © Infineon Technologies AG 1/31/04. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide. Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Smart High-Side Power Switch BTS 5434G Data Sheet 2004-01-23

h t t p : / / w w w . i n f i n e o n . c o m Published by Infineon Technologies AG

Product Information

BTS5434G specifications and overview.

Summary

Smart High-Side Power Switch PROFET TWO CHANNELS, 60MOHM V1.0, January 2004

Description

Smart High-Side Power Switch PROFET TWO CHANNELS, 60MOHM V1.0, January 2004

Source title BTS5434G Datasheet(PDF) - Infineon Technologies AG

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