BTS542D2 SIEMENS | Alldatasheet
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/Gb7 Overload protection /Gb7 Current limitation /Gb7 Short-circuit protection /Gb7 Thermal shutdown /Gb7 Overvoltage protection (including load dump) /Gb7 Fast demagnetization of inductive loads /Gb7 Reverse battery protection1) /Gb7 Undervoltage and overvoltage shutdown with auto-restart and hysteresis /Gb7 CMOS diagnostic output /Gb7 Open load detection in ON-state /Gb7 CMOS compatible input /Gb7 Loss of ground and loss of Vbb protection2) /Gb7 Electrostatic discharge (ESD ) protection Application /Gb7 /G6d C compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads /Gb7 All types of resistive, inductive and capacitve loads /Gb7 Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, integrated in Smart SIPMOS/Ge2 chip on chip technology. Fully protected by embedded protection functions. /G2b/G20/G56 /G62/G62 /G49/G4e /G53/G54 /G53/G69/G67/G6e/G61/G6c/G20/G47/G4e/G44 ESD PROFET /G4f/G55/G54 /G47/G4e/G44 Logic Voltage sensor Voltage source Open load detection Short circuit detection Charge pump Level shifter Temperature sensorRectifier Limit for unclamped ind. loads Gate protection Current limit /G4c/G6f/G61/G64/G20/G47/G4e/G44 /G4c/G6f/G61/G64 /G56 /G4c/G6f/G67/G69/G63 Overvoltage protection /G52 /G62/G62 1) No external components required, reverse load current limited by connected load. 2) Additional external diode required for charged inductive loads Product Summary Overvoltage protectionVbb(AZ) 63 V Operating voltage Vbb(on) 4.5 ... 42 V On-state resistance R ON 18 m /G57 Load current (ISO) IL(ISO) 21 A Current limitation IL(SCr) 70 A TO-218AB/5 /G35 /G53/G74/G61/G6e/G64/G61/G72/G64
Semiconductor Group Page 2 13.Nov.95 Pin Symbol Function
1 GND - Logic ground
2 IN I Input, activates the power switch in case of logical high signal
3V bb + Positive power supply voltage, the tab is shorted to this pin
4 ST S Diagnostic feedback, low on failure
(Load, L) O Output to the load Maximum Ratings at Tj = 25 °C unless otherwise specified Parameter Symbol Values Unit Supply voltage (overvoltage protection see page 3)Vbb 63 V Load dump protection VLoadDump = U A + Vs, U A = 13.5 V R I= 2 /G57 , R L= 1.1 /G57 , td= 200 ms, IN= low or high VLoad dump3) 80 V Load current (Short-circuit current, see page 4)IL self-limited A Operating temperature range Storage temperature range Tj Tstg -40 ...+150 -55 ...+150 Power dissipation (DC) Ptot 167 W Inductive load switch-off energy dissipation, single pulse Tj=150 °C: EAS 2.1 J Electrostatic discharge capability (ESD) (Human Body Model) VESD 2.0 kV Input voltage (DC) VIN -0.5 ... +6 V Current through input pin (DC) Current through status pin (DC) see internal circuit diagrams page 6... IIN IST /Gb1 5.0 /Gb1 5.0 mA Thermal resistance chip - case: junction - ambient (free air): R thJC R thJA /Ga3 0.75 /Ga3 45 K/W 3) VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
Semiconductor Group Page 3 13.Nov.95
Electrical Characteristics
Parameter and Conditions Symbol Values Unit at Tj = 25 °C, Vbb = 12 V unless otherwise specified min typ max Load Switching Capabilities and Characteristics On-state resistance (pin 3 to 5) IL = 5 A Tj=25 °C: Tj=150 °C: R ON -- 15 m /G57 Nominal load current (pin 3 to 5) ISO Proposal: VON = 0.5 V, TC = 85 °C IL(ISO) 17 21 -- A Output current (pin 5) while GND disconnected or GND pulled up, VIN= 0, see diagram page 7, Tj =-40...+150°C IL(GNDhigh) -- -- 1 mA Turn-on time to 90% VOUT : Turn-off time to 10% VOUT : ton toff 100 350 130 /G6d s Slew rate on 10 to 30% VOUT , R L = 12 /G57 , Tj =-40...+150°C dV /dton 0.2 -- 2 V/ /G6d s Slew rate off 70 to 40% VOUT , R L = 12 /G57 , Tj =-40...+150°C -dV/dtoff 0.4 -- 5 V/ /G6d s Operating Parameters Operating voltage 4) Tj =-40...+150°C:Vbb(on) 4.5 -- 42 V Undervoltage restart Tj =-40...+150°C:Vbb(u rst) -- -- 4.5 V Undervoltage restart of charge pump see diagram page 12 Tj =-40...+150°C: Vbb(ucp) -- 6.5 7.5 V Undervoltage hysteresis /G44 Vbb(under) = Vbb(u rst) - Vbb(under) /G44 Vbb(under) -- 0.2 -- V Overvoltage shutdown Tj =-40...+150°C:Vbb(over) 42 -- 52 V Overvoltage restart Tj =-40...+150°C:Vbb(o rst) 42 -- -- V Overvoltage hysteresis Tj =-40...+150°C:/G44 Vbb(over) -- 0.2 -- V Overvoltage protection5) Tj =-40°C: Ibb=40 mA Tj =25...+150°C: Vbb(AZ) 60 -- V Standby current (pin 3) Tj=-40...+25°C: VIN=0, IST =0, Tj=150°C: Ibb(off) -- /G6d A Leakage output current (included in Ibb(off)) VIN=0 IL(off) -- 6- - /G6d A Operating current (Pin 1)6), VIN=5 V IGND -- 1.1 -- mA 4) At supply voltage increase up to Vbb= 6.5 V typ without charge pump, VOUT /Gbb Vbb - 2 V 5) see also VON(CL) in table of protection functions and circuit diagram page 7. Meassured without load. 6) Add IST , if IST > 0, add IIN, if VIN>5.5 V
Parameter and Conditions Symbol Values Unit at Tj = 25 °C, Vbb = 12 V unless otherwise specified min typ max Semiconductor Group Page 4 13.Nov.95 Protection Functions Initial peak short circuit current limit (pin 3 to 5)7), ( max 400 /G6d s if VON > VON(SC) ) IL(SCp) Tj =-40°C: Tj =25°C: Tj =+150°C: 140 A Repetitive short circuit current limit IL(SCr) Tj = Tjt (see timing diagrams, page 10) 30 70 -- A Short circuit shutdown delay after input pos. slope VON > VON(SC) , Tj =-40..+150°C: min value valid only, if input "low" time exceeds 30 /G6d s td(SC) 80 -- 400 /G6d s Output clamp (inductive load switch off) at VOUT = Vbb - VON(CL), IL= 30 mA VON(CL) -- 58 -- V Short circuit shutdown detection voltage (pin 3 to 5) VON(SC) -- 8.3 -- V Thermal overload trip temperature Tjt 150 -- -- °C Thermal hysteresis /G44 Tjt -- 10 -- K Inductive load switch-off energy dissipation8), Tj Start = 150 °C, single pulse Vbb = 12 V: Vbb = 24 V: EAS ELoad12 ELoad24 -- -- 2.1 1.7 1.2 J Reverse battery (pin 3 to 1) 9) -Vbb -- -- 32 V Integrated resistor in Vbb line R bb -- 120 -- /G57 Diagnostic Characteristics Open load detection current Tj=-40 °C: (on-condition) Tj=25..150°C: IL (OL) 2 1900 1500 mA 7) Short circuit current limit for max. duration of td(SC) max=400 /G6d s, prior to shutdown 8) While demagnetizing load inductance, dissipated energy in PROFET is EAS = /Gf2/Gf2 VON(CL) * iL(t) dt, approx. EAS = 1/2 * L * I2 L * ( VON(CL) VON(CL) - Vbb ), see diagram page 8 9) Reverse load current (through intrinsic drain-source diode) is normally limited by the connected load. Reverse current IGND of /Gbb 0.3 A at Vbb= -32 V through the logic heats up the device. Time allowed under these condition is dependent on the size of the heatsink. Reverse IGND can be reduced by an additional external GND-resistor (150 /G57 ). Input and Status currents have to be limited (see max. ratings page 2 and circuit page 7).
Parameter and Conditions Symbol Values Unit at Tj = 25 °C, Vbb = 12 V unless otherwise specified min typ max Semiconductor Group Page 5 13.Nov.95 Input and Status Feedback10) Input turn-on threshold voltage Tj =-40..+150°C: VIN(T+) 1.5 -- 2.4 V Input turn-off threshold voltage Tj =-40..+150°C: VIN(T-) 1.0 -- -- V Input threshold hysteresis /G44 VIN(T) -- 0.5 -- V Off state input current (pin 2), VIN = 0.4 V IIN(off) 1 -- 30 /G6d A On state input current (pin 2), VIN = 3.5 V IIN(on) 10 25 50 /G6d A Status invalid after positive input slope (short circuit) Tj=-40 ... +150°C: td(ST SC) 80 200 400 /G6d s Status invalid after positive input slope (open load) Tj=-40 ... +150°C: td(ST) 350 -- 1600 /G6d s Status output (CMOS) Tj =-40...+150°C, IST = - 50 /G6d A: Tj =-40...+150°C, IST = +1.6 mA: Max. status current for current source (out): valid status output, current sink (in) : Tj =-40...+150°C VST(high)11) VST(low) -IST +IST 12) 4.4 5.1 6.5 0.4 0.25 1.6 V mA 10) If a ground resistor RGND is used, add the voltage drop across this resistor. 11) VSt high /Gbb Vbb during undervoltage shutdown 12) No current sink capability during undervoltage shutdown
Semiconductor Group Page 6 13.Nov.95 Truth Table Input- Output Status level level 542 542 Normal operation L H L H H H H H Open load L H 13) H H L H L Short circuit to GND L H L L H L H L Short circuit to Vbb L H H H H H (L14)) H H (L14)) Overtem- perature L H L L L L L L Under- voltage L H L L L15) L15) H H Overvoltage L H L L L L H H L = "Low" Level H = "High" Level 13) Power Transistor off, high impedance 14) Low resistance short Vbb to output may be detected by no-load-detection 15) No current sink capability during undervoltage shutdown Terms /G50/G52/G4f/G46/G45/G54 /G56 /G49/G4e /G53/G54 /G4f/G55/G54 /G47/G4e/G44 /G62/G62 /G56 /G53/G54/G56 /G49/G4e /G49 /G53/G54 /G49 /G49/G4e /G56 /G62/G62 /G49 /G62/G62 /G49 /G4c /G56 /G4f/G55/G54/G49 /G47/G4e/G44 /G56 /G4f/G4e /G31 /G32 /G34 /G33 /G35 /G52 /G47/G4e/G44 Input circuit (ESD protection) /G49/G4e /G47/G4e/G44 /G49/G52 /G5a/G44 /G5a/G44 /G49/G49/G49/G31 /G49/G32 /G45/G53/G44/G2d ZD I1 6.1 V typ., ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V). Status output /G53/G54 /G56 /G4c/G6f/G67/G69/G63 /G47/G4e/G44 /G45/G53/G44/G2d /G5a/G44 Zener diode: 6.1 V typ., max 5 mA, VLogic 5 V typ, ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V). Short Circuit detection Fault Condition: VON > 8.3 V typ.; IN high /G53/G68/G6f/G72/G74/G20/G63/G69/G72/G63/G75/G69/G74 /G64/G65/G74/G65/G63/G74/G69/G6f/G6e /G4c/G6f/G67/G69/G63 /G75/G6e/G69/G74 /G2b/G20/G56 /G62/G62 /G4f/G55/G54 /G56 /G4f/G4e
Semiconductor Group Page 7 13.Nov.95 Inductive and overvoltage output clamp /G2b/G20/G56 /G62/G62 /G4f/G55/G54 /G47/G4e/G44 /G56 /G5a /G56 /G4f/G4e VON clamped to 58 V typ. Overvolt. and reverse batt. protection /G2b/G20/G56 /G62/G62 /G56 /G4f/G55/G54 /G49/G4e /G53/G54 /G62/G62/G52 /G53/G69/G67/G6e/G61/G6c/G20/G47/G4e/G44 /G4c/G6f/G67/G69/G63 PROFET /G56 /G5a /G52 /G47/G4e/G44 /G47/G4e/G44 /G49/G4e/G52 /G53/G54/G52 R bb = 120 /G57 typ/G2e , VZ +R bb*40 mA = 67 V typ., add R GND , RIN, RST for extended protection Open-load detection ON-state diagnostic condition: VON < R ON * IL(OL); IN high /G4f/G70/G65/G6e/G20/G6c/G6f/G61/G64 /G64/G65/G74/G65/G63/G74/G69/G6f/G6e /G4c/G6f/G67/G69/G63 /G75/G6e/G69/G74 /G2b/G20/G56 /G62/G62 /G4f/G55/G54 /G4f/G4e /G56 /G4f/G4e GND disconnect /G50/G52/G4f/G46/G45/G54 /G56 /G49/G4e /G53/G54 /G4f/G55/G54 /G47/G4e/G44 /G62/G62 /G56 /G62/G62 /G31 /G32 /G34 /G33 /G35 /G56 /G49/G4e /G56 /G53/G54 /G56 /G47/G4e/G44 Any kind of load. In case of Input=high is VOUT /Gbb VIN - VIN(T+) . Due to VGND >0, no VST = low signal available. GND disconnect with GND pull up /G50/G52/G4f/G46/G45/G54 /G56 /G49/G4e /G53/G54 /G4f/G55/G54 /G47/G4e/G44 /G62/G62 /G56 /G62/G62 /G31 /G32 /G34 /G33 /G35 /G56 /G47/G4e/G44 /G56 /G49/G4e /G56 /G53/G54 Any kind of load. If VGND > VIN - VIN(T+) device stays off Due to VGND >0, no VST = low signal available. Vbb disconnect with charged inductive load /G50/G52/G4f/G46/G45/G54 /G56 /G49/G4e /G53/G54 /G4f/G55/G54 /G47/G4e/G44 /G62/G62 /G56 /G62/G62 /G31 /G32 /G34 /G33 /G35 /G68/G69/G67/G68
Semiconductor Group Page 8 13.Nov.95 /G50/G52/G4f/G46/G45/G54 /G56 /G49/G4e /G53/G54 /G4f/G55/G54 /G47/G4e/G44 /G62/G62 /G56 /G62/G62 /G31 /G32 /G34 /G33 /G35 /G68/G69/G67/G68 Inductive Load switch-off energy dissipation /G50/G52/G4f/G46/G45/G54 /G56 /G49/G4e /G53/G54 /G4f/G55/G54 /G47/G4e/G44 /G62/G62 /G3d /G45 /G45 /G45 /G45 /G41/G53 /G62/G62 /G4c /G52 /G45 /G4c/G6f/G61/G64 Energy dissipated in PROFET EAS = Ebb + EL - ER . ELoad < EL, EL = 1/2 * L * I2 L
Semiconductor Group Page 9 13.Nov.95 Options Overview all versions: High-side switch, Input protection, ESD protection, load dump and reverse battery protection , protection against loss of ground Type BTS 542D2 542E2 Logic version D E Overtemperature protection Tj >150 °C, latch function16)17) Tj >150 °C, with auto-restart on cooling X X Short-circuit to GND protection switches off when VON >8.3 V typ.16) (when first turned on after approx. 200 /G6d s) X X Open load detection in OFF-state with sensing current 30 /G6d A typ. in ON-state with sensing voltage drop across power transistor X X Undervoltage shutdown with auto restartX X Overvoltage shutdown with auto restartX X Status feedback for overtemperature short circuit to GND short to V bb open load undervoltage overvoltage X X 18) X X X X X 18) X Status output type CMOS Open drain X X Output negative voltage transient limit (fast inductive load switch off) to Vbb - VON(CL) X X Load current limit high level (can handle loads with high inrush currents) medium level low level (better protection of application) X X 16) Latch except when Vbb -VOUT < VON(SC) after shutdown. In most cases VOUT = 0 V after shutdown (VOUT /Gb9 0 V only if forced externally). So the device remains latched unless Vbb < VON(SC) (see page 4). No latch between turn on and td(SC). 17) With latch function. Reseted by a) Input low, b) Undervoltage, c) Overvoltage 18) Low resistance short Vbb to output may be detected by no-load-detection
Semiconductor Group Page 13 13.Nov.95 Package and Ordering Code All dimensions in mm Standard TO-218AB/5 Ordering code BTS 542 D2 Q67060-S6950-A2